US3109753A - Photoconductor sintering process - Google Patents
Photoconductor sintering process Download PDFInfo
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- US3109753A US3109753A US150872A US15087261A US3109753A US 3109753 A US3109753 A US 3109753A US 150872 A US150872 A US 150872A US 15087261 A US15087261 A US 15087261A US 3109753 A US3109753 A US 3109753A
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- photoconductor
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- furnace
- sintering
- plate
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- 238000005245 sintering Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 13
- 230000008569 process Effects 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 37
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 150000004820 halides Chemical class 0.000 description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 5
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 5
- 239000012190 activator Substances 0.000 description 5
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 239000008096 xylene Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000003039 volatile agent Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- JYDZYJYYCYREGF-UHFFFAOYSA-N [Cd].[Se]=S Chemical compound [Cd].[Se]=S JYDZYJYYCYREGF-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003081 coactivator Effects 0.000 description 2
- 229940116318 copper carbonate Drugs 0.000 description 2
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BEIOEBMXPVYLRY-UHFFFAOYSA-N [4-[4-bis(2,4-ditert-butylphenoxy)phosphanylphenyl]phenyl]-bis(2,4-ditert-butylphenoxy)phosphane Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC=C1OP(C=1C=CC(=CC=1)C=1C=CC(=CC=1)P(OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC1=CC=C(C(C)(C)C)C=C1C(C)(C)C BEIOEBMXPVYLRY-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Definitions
- Photoconducting materials have found many applications in devices for light amplification in the television art or for data storage in the computer art. Almost all of the devices developed for these arts have utilized a layer of photoconductor material contigous or nearly contiguous with a layer of electroluminescent material. An exciting voltage is applied across the two layers in series and a voltage drop across each layer then exists. Light falling upon the layer of photoconductor material causes its resistance to be lowered and the voltage drop across the photoconductor layer drops while that across the electroluminescent layer increases, causing the latter to emit light of an intensity corresponding to the voltage change. To produce a uniform reduction in resistance throughout the entire device, the composition of other photoconductor material should not deviate from one location on the layer to another.
- the photo conductor is generally prepared of materials such as cadmium sulfide, cadmium selenide or cadmium selenium sulfide, activated with copper and a halide co-activator, for example chlorine or bromine, the sintering tends to drive off the volatile substances. If the entire coated substrate is not uniformly heated, more of the volatiles such as the halides will be driven off from the warmer areas than from the cooler areas, thus presenting different quantities of activation in one portion of the photoconductor surface than another. Because photoconduotivity is related to the amount of chloride present, such uneven volatization of activator is undesirable.
- a widely accepted method of sintering the photoconductor was to preheat a 'diatomaceous earth block such as Maranite in the furnace to near the sintering temperature of the photoconductor.
- the coated substrate was then placed upon this block and heated until equilibrium temperature was reached and the photoconductor was thus sintered. But with this method, the periphery of the substrate reached equilibrium temperature before the center. When finally the center reached equilibrium, the edges were overheated or at least were held at equilibrium temperatures for a longer period of time than the center. Thus excess volatiles were driven from the photoconductor and the edges were adversely affected. Furthermore because the heat transfer from the refractory was rather slow, the glass tended to build up inordinate strains and cracking often ensued.
- the primary object of my invention is the realization of uniform sintering of a photoconduetor layer.
- Another object of my invention is the production of a sintered photoconductor having uniform emission over its entire surface.
- the drawing is a flow sheet illustrating the procedural steps which may be used in fabricating a sintered photoconductor according to my invention.
- the photoconduotor material used in this invention is prepared according to conventional techniques. Phos- 2 phor quality cadmium sulfide is mixed together with cadmium chloride and copper carbonate and given a preliminary firing which produces a small amount of sintering and preliminary incorporation of the activator components into the cadmium sulfide matrix. The material is then milled in xylene or other suitable solvent, such as benzine or toluene, to insure a reasonably uniform particle size, generally of 1 to 5 microns, which will yield a smooth appearing sintered layer when coated upon the substrate.
- suitable solvent such as benzine or toluene
- the mixture is dried and suspended in a vehicle such as a lacquer, a mixture of benzine and nitrocellulose, or a mixture of ethylcellulose and xylol.
- a vehicle such as a lacquer, a mixture of benzine and nitrocellulose, or a mixture of ethylcellulose and xylol.
- a coherent layer generally about .001 to .010 inch thick may be formed when the mixture is coated upon the substrate.
- This substrate may be for example, a glass plate or the face of an electroluminescent lamp. Procedures used for coating the substrate are those known to the art such as painting, spraying, flow coating or doctorblading.
- the coated substrate After application of the photoconductor-vehicle layer, the coated substrate is allowed to air dry at room temperature to volatilize a considerable portion of the organic prior to firing.
- the method of firing the coated plate is particularly important, as I have pointed out above, because of the desirability of attaining uniform volatilization of the chloride over the entire surface of the photoconductor and eliminating cracking of the glass.
- I preheat a metal plate, generally of stainless steel stock at least W inch thick and preferably about 7 inch thick in a furnace.
- a metal plate generally of stainless steel stock at least W inch thick and preferably about 7 inch thick in a furnace.
- the plate is quickly removed from the oven and the coated substrate is placed thereon. Quickly, the preheated plate and coated substrate is replaced into the furnace upon the refractory blocks.
- the plate must be larger than the substrate, if uniform heating is to be attained.
- the plate is about two inches larger at every point around the periphery of the substrate.
- the heating is continued for about 1 /2 to 5 minutes to complete the operation.
- the principle behind my method is that the furnace is at a temperature sufiicien-t to sinter the pho-toconduotor and the metal plate is also at that same high temperature.
- the heat is transmitted directly into the substrate uniform- 1y over the entire area.
- the result is an almost instantaneous heating action.
- the heat within the furnace is radiated downwardly upon the coated substrate and the plate radiates heat upwardly.
- the substrate is brought up to temperature very rapidly, thus reducing any differences in temperatures between the bottom and top. This action happens so quickly that the glass passes its critical temperature before sufiicient thermal strain is built up to crack and craze the substrate. Because of the rapid heating, the entire coated substrate receives the same amount of heat. Uniform loss of chloride is attained and photoluminescence is thus substantially uniform across the entire s intered photoconductor.
- the blended material is then fired in a covered No. 3 crucible at 530 C. for a period of 35 minutes and then allowed to cool while covered.
- the cake is removed and crushed to a fairly fine particle size with a porcelain spatula.
- the powder is placed in a quart mill with 100 ml. of xylene and milled for about 25 hours until a particle size of l to 5 microns is attained.
- the mill change is removed and the mill is rinsed with 3100 mls. of xylene and the milled suspension is passed through a 200 mesh screen to remove any lumps.
- the resulting suspension is allowed to settle and all but about 100 mls. of xyleneis drawn off and discarded.
- steps which comprise: coating said photoconductor upon a substrate; preheating a metal plate, at least as large as the substrate, within a furnace, substantially to the sintering temperature of said photoconduotor; placing said coated substrate upon said preheated metal plate and then sintering said coated photoconductor within a furnace.
- steps which comprise: coating said photoconductor including said volatile halide coactivator upon a glass substrate; preheating a metal plate within a furnace substantially to the sintering temperature of said photoconductor; placing,
- a photoconductor con? 1 taining a volatile halide co-activator the steps which comprise: coating a glass substrate with a photoconductor having a volatile halide coactivator, said photoconductor selected from the group consisting of cadmium sulfide, cadmium selenide and cadmium selenium sulfide; preheating a metal plate larger than said substrate in a furnace to a temperature within the range of 500 to 700 C. placing said coated substrate upon said metal plate and sintering said photoconductor by heating to a temperature within the range of 500 to 700 C.
Description
Nov. 5, 1963 D. 1.. COLE 3,109,753
; PHOTOCONDUCTOR SINTERING PROCESS Filed NOV. 8, 1961 T COAT PHOTOCONDUCTOR FREHEAT METAL PLATE ON SUBSTRATE IN FURNACE AIR DRY REMOVE METAL PLATE COATED SUBSTRATE FROM FURNACE PLACE COATED SUBSTRATE ON PREHEATED METAL PLATE SINTER PHOTOCONDUCTOR IN FURNACE REMOVE SINTERED PHOTOCONDUCTOR FROM FURNACE AND ALLOW TO COOL DAY] 0 1.. COLE vs TOR BY Q44 ATTO NEY United States Patent ()fiice 3,100,753- Patented Nov. 5, 1963 This invention relates to photoconductors and more particularly to a method of uniformly sinterin g photoconductor material coated upon a substrate.
Photoconducting materials have found many applications in devices for light amplification in the television art or for data storage in the computer art. Almost all of the devices developed for these arts have utilized a layer of photoconductor material contigous or nearly contiguous with a layer of electroluminescent material. An exciting voltage is applied across the two layers in series and a voltage drop across each layer then exists. Light falling upon the layer of photoconductor material causes its resistance to be lowered and the voltage drop across the photoconductor layer drops while that across the electroluminescent layer increases, causing the latter to emit light of an intensity corresponding to the voltage change. To produce a uniform reduction in resistance throughout the entire device, the composition of other photoconductor material should not deviate from one location on the layer to another.
In the processing procedures previously utilized throughout the industry, such requirements of uniform composition were quite diificult to fulfill. Since the photo conductor is generally prepared of materials such as cadmium sulfide, cadmium selenide or cadmium selenium sulfide, activated with copper and a halide co-activator, for example chlorine or bromine, the sintering tends to drive off the volatile substances. If the entire coated substrate is not uniformly heated, more of the volatiles such as the halides will be driven off from the warmer areas than from the cooler areas, thus presenting different quantities of activation in one portion of the photoconductor surface than another. Because photoconduotivity is related to the amount of chloride present, such uneven volatization of activator is undesirable.
A widely accepted method of sintering the photoconductor was to preheat a 'diatomaceous earth block such as Maranite in the furnace to near the sintering temperature of the photoconductor. The coated substrate was then placed upon this block and heated until equilibrium temperature was reached and the photoconductor was thus sintered. But with this method, the periphery of the substrate reached equilibrium temperature before the center. When finally the center reached equilibrium, the edges were overheated or at least were held at equilibrium temperatures for a longer period of time than the center. Thus excess volatiles were driven from the photoconductor and the edges were adversely affected. Furthermore because the heat transfer from the refractory was rather slow, the glass tended to build up inordinate strains and cracking often ensued.
Accordingly, the primary object of my invention is the realization of uniform sintering of a photoconduetor layer.
Another object of my invention is the production of a sintered photoconductor having uniform emission over its entire surface.
Other objects, advantages, and features of the invention will be apparent from the following specification wherein a preferred embodiment of my invention is described by Way of illustrative example.
The drawing is a flow sheet illustrating the procedural steps which may be used in fabricating a sintered photoconductor according to my invention.
The photoconduotor material used in this invention is prepared according to conventional techniques. Phos- 2 phor quality cadmium sulfide is mixed together with cadmium chloride and copper carbonate and given a preliminary firing which produces a small amount of sintering and preliminary incorporation of the activator components into the cadmium sulfide matrix. The material is then milled in xylene or other suitable solvent, such as benzine or toluene, to insure a reasonably uniform particle size, generally of 1 to 5 microns, which will yield a smooth appearing sintered layer when coated upon the substrate. Afterwards the mixture is dried and suspended in a vehicle such as a lacquer, a mixture of benzine and nitrocellulose, or a mixture of ethylcellulose and xylol. In this manner a coherent layer generally about .001 to .010 inch thick may be formed when the mixture is coated upon the substrate. This substrate may be for example, a glass plate or the face of an electroluminescent lamp. Procedures used for coating the substrate are those known to the art such as painting, spraying, flow coating or doctorblading.
After application of the photoconductor-vehicle layer, the coated substrate is allowed to air dry at room temperature to volatilize a considerable portion of the organic prior to firing.
The method of firing the coated plate is particularly important, as I have pointed out above, because of the desirability of attaining uniform volatilization of the chloride over the entire surface of the photoconductor and eliminating cracking of the glass. According to my invention, I preheat a metal plate, generally of stainless steel stock at least W inch thick and preferably about 7 inch thick in a furnace. For preheating, I place the plate on a bridge support of Maranite blocks and raise the plate to a predetermined sintering temperature within the range of 500 to 700 C. When heated, the plate is quickly removed from the oven and the coated substrate is placed thereon. Quickly, the preheated plate and coated substrate is replaced into the furnace upon the refractory blocks. I have found that the plate must be larger than the substrate, if uniform heating is to be attained. Preferably the plate is about two inches larger at every point around the periphery of the substrate. When the equilibrium temperature for sintering 500 to 700 C. is reached, the heating is continued for about 1 /2 to 5 minutes to complete the operation. By placing the substrate upon the preheated plate, uniform volatization of the chloride is always attained in all areas of the coated photoconduotor.
The principle behind my method is that the furnace is at a temperature sufiicien-t to sinter the pho-toconduotor and the metal plate is also at that same high temperature. By placing the substrate directly upon this preheated plate, the heat is transmitted directly into the substrate uniform- 1y over the entire area. The result is an almost instantaneous heating action. The heat within the furnace is radiated downwardly upon the coated substrate and the plate radiates heat upwardly. The substrateis brought up to temperature very rapidly, thus reducing any differences in temperatures between the bottom and top. This action happens so quickly that the glass passes its critical temperature before sufiicient thermal strain is built up to crack and craze the substrate. Because of the rapid heating, the entire coated substrate receives the same amount of heat. Uniform loss of chloride is attained and photoluminescence is thus substantially uniform across the entire s intered photoconductor.
The following specific example is offered as a further explanation of the invention, but it is not intended to be limitative upon the claims.
The following ingredients are mixed together and dry mixed by rolling in a bottle for about one hour:
Gm. Cadmium sulfide (Phosphor grade) 95.43 Cadmium chloride (reagent grade) 4.39
3,109,753 a Copper carbonate (reagent grade) .0578 As my inventionlclaim: Ammonium chloride (reagent grade) .0564 1. In the process for sintering a photoconductor, the
The blended material is then fired in a covered No. 3 crucible at 530 C. for a period of 35 minutes and then allowed to cool while covered. When cooled, the cake is removed and crushed to a fairly fine particle size with a porcelain spatula. The powder is placed in a quart mill with 100 ml. of xylene and milled for about 25 hours until a particle size of l to 5 microns is attained. After milling, the mill change is removed and the mill is rinsed with 3100 mls. of xylene and the milled suspension is passed through a 200 mesh screen to remove any lumps. The resulting suspension is allowed to settle and all but about 100 mls. of xyleneis drawn off and discarded. To the suspension of photoconduetor in xylene, 50 'mls. of lacquer is added and the suspension is thoroughly stirred. Afterwards the mixture is doctor-bladed on a 4 x 4 inch glass substrate to thicknesses of .001 to .010 inch and allowed to air dry, thus removing much of the organic volatiles and forming a cohesive layer. During these photoconductor preparations, a furnace heated to a temperature of 640 C. and a A inch thick, 8 x 8 inch metal plate is preheated upon Maranite blocks to that temperature. The plate is quickly removed from the furnace and the coated substrate is placed thereupon. Then the plate is replaced in the furnace to *sinter the photoconductor. After heating for 2% minutes, the plate is removed and the substrate removed and allowed rto cool. Uniform si-ntering and v volatilization was evidenced in all areas 'on the substrate.
It is apparent that modifications and changes may be made by those skilled in the art, but it is my intention however only to be limited by the scope of the instant claims.-
steps which comprise: coating said photoconductor upon a substrate; preheating a metal plate, at least as large as the substrate, within a furnace, substantially to the sintering temperature of said photoconduotor; placing said coated substrate upon said preheated metal plate and then sintering said coated photoconductor within a furnace.
2. In the process for uniformly sintering a photocondue-tor including a volatile halide co activator, the steps which comprise: coating said photoconductor including said volatile halide coactivator upon a glass substrate; preheating a metal plate within a furnace substantially to the sintering temperature of said photoconductor; placing,
said coated substrate upon said metal plate and heating said coated substrate in a furnace to sinter said photoco-ndoctor.
3. In the process for sintering a photoconductor con? 1 taining a volatile halide co-activator the steps which comprise: coating a glass substrate with a photoconductor having a volatile halide coactivator, said photoconductor selected from the group consisting of cadmium sulfide, cadmium selenide and cadmium selenium sulfide; preheating a metal plate larger than said substrate in a furnace to a temperature within the range of 500 to 700 C. placing said coated substrate upon said metal plate and sintering said photoconductor by heating to a temperature within the range of 500 to 700 C.
References Cited in the file of this patent UNITED STATES PATENTS 2,879,182 P akswer et a l Mar. 24, 1959
Claims (1)
1. IN THE PROCESS FOR SINTERING A PHOTOCONDUCTOR, THE STEPS WHICH COMPRISE: COATING SAID PHOTOCONDUCTOR UPON A SUBSTRATE; PREHEATING A METAL PLATE, AT LEAST AS LARGE AS THE SUBSTRATE, WITHIN A FURNACE, SUBSTANTIALLY TO THE SINTER-
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US150872A US3109753A (en) | 1961-11-08 | 1961-11-08 | Photoconductor sintering process |
Applications Claiming Priority (1)
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US150872A US3109753A (en) | 1961-11-08 | 1961-11-08 | Photoconductor sintering process |
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US3109753A true US3109753A (en) | 1963-11-05 |
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US150872A Expired - Lifetime US3109753A (en) | 1961-11-08 | 1961-11-08 | Photoconductor sintering process |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3377200A (en) * | 1964-07-31 | 1968-04-09 | Ncr Co | Process for activating photoconductive films |
US3379527A (en) * | 1963-09-18 | 1968-04-23 | Xerox Corp | Photoconductive insulators comprising activated sulfides, selenides, and sulfoselenides of cadmium |
US3391021A (en) * | 1964-07-21 | 1968-07-02 | Gen Instrument Corp | Method of improving the photoconducting characteristics of layers of photoconductive material |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2879182A (en) * | 1956-05-31 | 1959-03-24 | Rauland Corp | Photosensitive devices |
-
1961
- 1961-11-08 US US150872A patent/US3109753A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2879182A (en) * | 1956-05-31 | 1959-03-24 | Rauland Corp | Photosensitive devices |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3379527A (en) * | 1963-09-18 | 1968-04-23 | Xerox Corp | Photoconductive insulators comprising activated sulfides, selenides, and sulfoselenides of cadmium |
US3391021A (en) * | 1964-07-21 | 1968-07-02 | Gen Instrument Corp | Method of improving the photoconducting characteristics of layers of photoconductive material |
US3377200A (en) * | 1964-07-31 | 1968-04-09 | Ncr Co | Process for activating photoconductive films |
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