US3058002A - Light beam transducer - Google Patents
Light beam transducer Download PDFInfo
- Publication number
- US3058002A US3058002A US699785A US69978557A US3058002A US 3058002 A US3058002 A US 3058002A US 699785 A US699785 A US 699785A US 69978557 A US69978557 A US 69978557A US 3058002 A US3058002 A US 3058002A
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- United States
- Prior art keywords
- layer
- light
- photoconducting
- transducer
- electroluminescent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000004065 semiconductor Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000002463 transducing effect Effects 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Definitions
- This invention relates to light transducing means and more particularly to means for elficiently converting light rays into electrical control currents.
- Light sensitive materials used in control circuits for monitoring the current flow therethrough dependent upon the amount of incident light are of course in general use.
- the present invention relates directly to the provision of a novel and highly eflicient light transducing means.
- FIGURE 1 is a diagrammatic showing of a light sensitive assembly embodying my invention.
- FIGURE 2 is a similar figure showing a multiple unit transducer.
- the light transducer which is the subject of the present invention is formed of a plurality of sections which are fixedly secured together to provide a light sensitive unit.
- a compound light sensitive unit which consists of a first photoconducting semiconductor unit 2 or layer which may be formed of any one of several different activated elements such as CdS, ZnS, PbS or CdTe.
- an electrode 4 On one surface of the layer 2 there is evaporated an electrode 4 for connection into an electrical circuit.
- a layer of electroluminescent semiconductor 6 To the opposite face of the layer 2 there is secured a layer of electroluminescent semiconductor 6.
- a second conductive layer 8 which again may be a metallic film evaporated on the surface to provide an electrical contact.
- a second layer of photoconducting semiconductor 10 which may be formed of one of the other compounds mentioned above with regard to layer 2.
- the lower face of layer 10 has a final conductive film 12 evaporated thereon to provide for electrical connection.
- a battery 14 is connected across conductive layers 4 and 8 to apply a desired potential across that part of the laminar body formed of photoconducting layer 2 and 3,058,002 Patented Oct. 9, 1962 electroluminescent layer 6.
- a second source of electrical power indicated by battery 16 is connected in series with any suitable load 18 and across the conductive films 8 and 12.
- this photosensitive assembly In the operation of this photosensitive assembly, light strikes the unit from the top as indicated by the arrow 20 passing down through the photoconducting semiconductor layer 2 as indicated by the path 22. It then proceeds through the interface between layers 2 and 6 and on into the electroluminescent semiconductor 6 which causes this to electroluminesce and transmit waves of a certain color or wave length which waves are inclined to spread from the beam through the first layer as indicated by the arrows and the angled rays are reflected from the interface 8 between layers 6 and 10 causing the rays to bounce back, induce new conductive areas 24 along the lower surface of the photoconductive layer 2 and be reflected therefrom. These areas 24 in turn induce further electr0 luminescence of the electroluminescent layer 6 thereby further increasing the total conductivity in the semiconductor 10.
- FIGURE 2 illustrates the use of several of these laminar units in series to produce an even greater response.
- the upper unit indicated as transducer 1 could be the same as that shown in detail in FIGURE 1 and comprising a photoconducting layer 2, an electroluminescent layer 6 and a second photoconducting layer 10 all of which are bracketed and labeled transducer No. 1.
- photoconducting layer 10 may also act as the upper photoconductive layer of a similar laminar body labeled transducer No. 2. In that case it is also associated with a second electroluminescent layer 32 and a third photoconducting layer 34.
- Proper bias voltages are applied through voltage sources 14, 16 and 36 and in this case, of course, the output signal or control is taken off the conductive films 38 and 40 on opposite sides of the photoconductive layer 34.
- this invention provides an efficient light sensitive transducer for converting ambient light into control currents or voltages.
- photoelectric means for controlling a load, a source of light rays which vary in intensity, a laminated body one surface of which is exposed to the varying amounts of radiation from said source of light rays, said laminar body including a first and a second outside layer of photoconducting material on opposite sides of a central layer of electroluminescent semiconductor material, said central layer of electroluminescent material when excited emitting light rays having a wave length in the band con- 3 ducted by one of the photoconducting semiconductor layers, means to apply an electric voltage across the first photoconducting and electroluminescent layer, a second voltage supplying means, and circuit means connecting the second voltage supply means in series with the second photoconducting layer and the load which is affected by the variations in the intensity in incident light.
Description
United States Patent 6% lice 3,058,002 LIGHT BEAM TRANSDUCER Yro T. Sihvonen, Birmingham, Mich, assignor to General Motors Corporation, Detroit, Mich, a corporation of Delaware Filed Nov. 29, 1957, Ser. No. 699,785 1 Claim. (Cl. 250-211) This invention relates to light transducing means and more particularly to means for elficiently converting light rays into electrical control currents.
Light sensitive materials used in control circuits for monitoring the current flow therethrough dependent upon the amount of incident light are of course in general use.
The present invention relates directly to the provision of a novel and highly eflicient light transducing means.
It is an object in making this invention to provide a light transducer fabricated of semiconductive materials.
It is a further object in making this invention to provide a laminar photosensitive light transducer formed of semiconductor elements.
It is a still further object in making this invention to provide a laminar assembly of semiconductor units for changing light rays into electrical control currents in which the rays are reflexed for amplification.
It is a yet further object in making this invention to provide a laminar light sensitive body in which an electroluminescent section is sandwiched between photoconductive sections to cause reflex action and amplify the response.
With these and other objects in view which will become apparent as the specification proceeds, the invention will be best understood by reference to the following specification and claim and the illustrations in the accompanying drawing in which:
FIGURE 1 is a diagrammatic showing of a light sensitive assembly embodying my invention, and
FIGURE 2 is a similar figure showing a multiple unit transducer.
As indicated in the above general discussion the light transducer which is the subject of the present invention is formed of a plurality of sections which are fixedly secured together to provide a light sensitive unit. Referring particularly to FIGURE 1, there is shown therein a compound light sensitive unit which consists of a first photoconducting semiconductor unit 2 or layer which may be formed of any one of several different activated elements such as CdS, ZnS, PbS or CdTe. On one surface of the layer 2 there is evaporated an electrode 4 for connection into an electrical circuit. To the opposite face of the layer 2 there is secured a layer of electroluminescent semiconductor 6. To the lower face of electroluminescent layer 6 there is applied a second conductive layer 8 which again may be a metallic film evaporated on the surface to provide an electrical contact. Completing the laminar body is a second layer of photoconducting semiconductor 10 which may be formed of one of the other compounds mentioned above with regard to layer 2. Lastly, the lower face of layer 10 has a final conductive film 12 evaporated thereon to provide for electrical connection.
A battery 14 is connected across conductive layers 4 and 8 to apply a desired potential across that part of the laminar body formed of photoconducting layer 2 and 3,058,002 Patented Oct. 9, 1962 electroluminescent layer 6. A second source of electrical power indicated by battery 16 is connected in series with any suitable load 18 and across the conductive films 8 and 12.
In the operation of this photosensitive assembly, light strikes the unit from the top as indicated by the arrow 20 passing down through the photoconducting semiconductor layer 2 as indicated by the path 22. It then proceeds through the interface between layers 2 and 6 and on into the electroluminescent semiconductor 6 which causes this to electroluminesce and transmit waves of a certain color or wave length which waves are inclined to spread from the beam through the first layer as indicated by the arrows and the angled rays are reflected from the interface 8 between layers 6 and 10 causing the rays to bounce back, induce new conductive areas 24 along the lower surface of the photoconductive layer 2 and be reflected therefrom. These areas 24 in turn induce further electr0 luminescence of the electroluminescent layer 6 thereby further increasing the total conductivity in the semiconductor 10. This dispersion continues until most of the area of the lower part of the layer 2 is conducting and electroluminescent layer 6 glows in proportion to the intensity of the incident light beam 20. Each of these additional areas now induce additional conductivity columns such as 26, 28 and 30 in the lower photoconducting layer 10 to amplify the response of the total unit to the incident light. Naturally each of these conductivity columns afiects the total flow of current I flowing through the load and thus a relatively weak beam of light can cause a considerable change in conductivity in the load circuit to control any desired device.
FIGURE 2 illustrates the use of several of these laminar units in series to produce an even greater response. In that case the upper unit indicated as transducer 1 could be the same as that shown in detail in FIGURE 1 and comprising a photoconducting layer 2, an electroluminescent layer 6 and a second photoconducting layer 10 all of which are bracketed and labeled transducer No. 1. However, in this case, photoconducting layer 10 may also act as the upper photoconductive layer of a similar laminar body labeled transducer No. 2. In that case it is also associated with a second electroluminescent layer 32 and a third photoconducting layer 34. Thus photoconducting layer 10 is common to both transducers but the result is that a double effect is obtained by such construction. Proper bias voltages are applied through voltage sources 14, 16 and 36 and in this case, of course, the output signal or control is taken off the conductive films 38 and 40 on opposite sides of the photoconductive layer 34.
It will thus be seen that this invention provides an efficient light sensitive transducer for converting ambient light into control currents or voltages.
I claim:
In photoelectric means for controlling a load, a source of light rays which vary in intensity, a laminated body one surface of which is exposed to the varying amounts of radiation from said source of light rays, said laminar body including a first and a second outside layer of photoconducting material on opposite sides of a central layer of electroluminescent semiconductor material, said central layer of electroluminescent material when excited emitting light rays having a wave length in the band con- 3 ducted by one of the photoconducting semiconductor layers, means to apply an electric voltage across the first photoconducting and electroluminescent layer, a second voltage supplying means, and circuit means connecting the second voltage supply means in series with the second photoconducting layer and the load which is affected by the variations in the intensity in incident light.
De Forest et al Apr. 29, 1952 Briggs Oct. 26, 1954 41 Sheldon Mar. 20, 1956 Ullery Dec. 11, 1956 Rosen Dec. 10, 1957 Halsted May 27, 1958 Rothschild Dec. 1, 1959 Hanlet Mar. 22, 1960 Kazan June 21, 1960 OTHER REFERENCES Bube: Photoconductivity of Solids, 1960, John Wiley 10 & Sons, New York, pp. 229-235.
Hausmann & Slack: Physics, 2nd edition, August 1939, D. Van Nostrand, New York, pp. 609-617.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US699785A US3058002A (en) | 1957-11-29 | 1957-11-29 | Light beam transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US699785A US3058002A (en) | 1957-11-29 | 1957-11-29 | Light beam transducer |
Publications (1)
Publication Number | Publication Date |
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US3058002A true US3058002A (en) | 1962-10-09 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US699785A Expired - Lifetime US3058002A (en) | 1957-11-29 | 1957-11-29 | Light beam transducer |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3088037A (en) * | 1961-01-03 | 1963-04-30 | Te Company | Radiation detector |
US3135868A (en) * | 1962-12-10 | 1964-06-02 | Joseph T Mcnaney | Light responsive voltage modulating device |
US3214591A (en) * | 1961-12-07 | 1965-10-26 | Rca Corp | Circuit and structure for photo-amplifier using one large and one small photocell |
US3231744A (en) * | 1960-11-22 | 1966-01-25 | Philips Corp | Fast-switching, bistable electro-optical device |
US3248552A (en) * | 1962-09-25 | 1966-04-26 | Philco Corp | Photosensitive optical logic unit for use in a computer system |
US3278814A (en) * | 1962-12-14 | 1966-10-11 | Ibm | High-gain photon-coupled semiconductor device |
US3497699A (en) * | 1966-01-20 | 1970-02-24 | Philips Corp | Device comprising an image intensifying tube having a plurality of sections |
US3548214A (en) * | 1968-08-07 | 1970-12-15 | Robert L Brown Sr | Cascaded solid-state image amplifier panels |
US3562540A (en) * | 1969-04-10 | 1971-02-09 | Mallory & Co Inc P R | Appliance with solid-state light-actuated control means |
US3710127A (en) * | 1971-04-19 | 1973-01-09 | Matsushita Electric Ind Co Ltd | Solid-state image converter having composite energy sensing element |
EP0029379A1 (en) * | 1979-11-15 | 1981-05-27 | Thomson-Csf | X or gamma rays detector, especially for radiology; X ray apparatus comprising such a detector |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2594740A (en) * | 1950-02-17 | 1952-04-29 | Forest Lee De | Electronic light amplifier |
US2692952A (en) * | 1952-03-14 | 1954-10-26 | Bell Telephone Labor Inc | Semiconductive light valve |
US2739243A (en) * | 1953-01-08 | 1956-03-20 | Sheldon Edward Emanuel | Composite photosensitive screens |
US2773992A (en) * | 1953-06-17 | 1956-12-11 | Itt | Display amplifier and method of making same |
US2816236A (en) * | 1956-06-19 | 1957-12-10 | Gen Electric | Method of and means for detecting stress patterns |
US2836766A (en) * | 1956-05-15 | 1958-05-27 | Gen Electric | Electroluminescent devices and circuits |
US2915641A (en) * | 1956-11-01 | 1959-12-01 | Sylvania Electric Prod | Electroluminescent display devices |
US2929950A (en) * | 1955-12-30 | 1960-03-22 | Electronique & Automatisme Sa | Electroluminescence devices |
US2942120A (en) * | 1955-12-12 | 1960-06-21 | Rca Corp | Electroluminescent storage device |
-
1957
- 1957-11-29 US US699785A patent/US3058002A/en not_active Expired - Lifetime
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2594740A (en) * | 1950-02-17 | 1952-04-29 | Forest Lee De | Electronic light amplifier |
US2692952A (en) * | 1952-03-14 | 1954-10-26 | Bell Telephone Labor Inc | Semiconductive light valve |
US2739243A (en) * | 1953-01-08 | 1956-03-20 | Sheldon Edward Emanuel | Composite photosensitive screens |
US2773992A (en) * | 1953-06-17 | 1956-12-11 | Itt | Display amplifier and method of making same |
US2942120A (en) * | 1955-12-12 | 1960-06-21 | Rca Corp | Electroluminescent storage device |
US2929950A (en) * | 1955-12-30 | 1960-03-22 | Electronique & Automatisme Sa | Electroluminescence devices |
US2836766A (en) * | 1956-05-15 | 1958-05-27 | Gen Electric | Electroluminescent devices and circuits |
US2816236A (en) * | 1956-06-19 | 1957-12-10 | Gen Electric | Method of and means for detecting stress patterns |
US2915641A (en) * | 1956-11-01 | 1959-12-01 | Sylvania Electric Prod | Electroluminescent display devices |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3231744A (en) * | 1960-11-22 | 1966-01-25 | Philips Corp | Fast-switching, bistable electro-optical device |
US3088037A (en) * | 1961-01-03 | 1963-04-30 | Te Company | Radiation detector |
US3214591A (en) * | 1961-12-07 | 1965-10-26 | Rca Corp | Circuit and structure for photo-amplifier using one large and one small photocell |
US3248552A (en) * | 1962-09-25 | 1966-04-26 | Philco Corp | Photosensitive optical logic unit for use in a computer system |
US3135868A (en) * | 1962-12-10 | 1964-06-02 | Joseph T Mcnaney | Light responsive voltage modulating device |
US3278814A (en) * | 1962-12-14 | 1966-10-11 | Ibm | High-gain photon-coupled semiconductor device |
US3497699A (en) * | 1966-01-20 | 1970-02-24 | Philips Corp | Device comprising an image intensifying tube having a plurality of sections |
US3548214A (en) * | 1968-08-07 | 1970-12-15 | Robert L Brown Sr | Cascaded solid-state image amplifier panels |
US3562540A (en) * | 1969-04-10 | 1971-02-09 | Mallory & Co Inc P R | Appliance with solid-state light-actuated control means |
US3710127A (en) * | 1971-04-19 | 1973-01-09 | Matsushita Electric Ind Co Ltd | Solid-state image converter having composite energy sensing element |
EP0029379A1 (en) * | 1979-11-15 | 1981-05-27 | Thomson-Csf | X or gamma rays detector, especially for radiology; X ray apparatus comprising such a detector |
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