First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface. Then, an oxidized film 105a formed by the irradiation of the first...http://www.google.ca/patents/US20020153360?utm_source=gb-gplus-sharePatent US20020153360 - Laser irradiating apparatus and method of manufacturing semiconductor apparatus
