A semiconductor memory device and a method of manufacturing same, wherein landing pads are formed to contact source/drain regions of an access transistor in a memory cell array area and a first resistor device is formed in the peripheral circuit area, by depositing a first conductive layer on a semiconductor...http://www.google.ca/patents/US6825091?utm_source=gb-gplus-sharePatent US6825091 - Semiconductor memory device and method of manufacturing same
