A semiconductor device (10) has a highly doped layer (26) having a first conductivity type uniformly implanted into the semiconductor substrate (20). An oxide-nitride-oxide structure (36, 38, 40) is formed over the semiconductor substrate (20). A halo region (46) having the first conductivity type is...http://www.google.ca/patents/US6887758?utm_source=gb-gplus-sharePatent US6887758 - Non-volatile memory device and method for forming
