A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited by introducing oxygen into the processing chamber at a flow...http://www.google.ca/patents/US6593247?utm_source=gb-gplus-sharePatent US6593247 - Method of depositing low k films using an oxidizing plasma
