A programming method for flash erasable programmable memory devices (flash EPROMs) comprises a first step of erasing the array of cells, then applying a control gate voltage to access a number of control gates. Any number of control gates can be accessed, but accessing four or eight control gates may...http://www.google.ca/patents/US5508959?utm_source=gb-gplus-sharePatent US5508959 - Programming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory device
