In a semiconductor device having a multilayer metallization structure using SiOF film as an interlayer insulating film, with respect to the interlayer insulating film, the fluorine concentration of SiOF films (11, 16) in a wiring gap portion in the same layer wiring is set to be higher than the fluorine...http://www.google.ca/patents/US6756676?utm_source=gb-gplus-sharePatent US6756676 - Semiconductor device and method of manufacturing the same
