A gaseous mixture of a titanium halide and silane is introduced to a plasma or thermal CVD reactor to induce a reaction such that a conformal and pure titanium film is deposited onto a semiconductor device within the reactor. The titanium halide has a chemical form of TiX.sub.4, where X is a halogen....http://www.google.ca/patents/US5595784?utm_source=gb-gplus-sharePatent US5595784 - Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides
