A technique comprises directing a plasma having at least first and second gasses at a substrate. The substrate is at least partially covered with at least the first and second layers. Ions of the first gas are electrostatically attracted towards the substrate. The second gas selectively etches the first...http://www.google.ca/patents/US7183215?utm_source=gb-gplus-sharePatent US7183215 - Etching with electrostatically attracted ions
