An improved method of forming a semiconductor device is described. In that method, a dielectric layer that comprises a carbon doped oxide is formed on a substrate. After a first etched region is formed in the dielectric layer, that region is filled with a sacrificial light absorbing material. A layer...http://www.google.ca/patents/US6448185?utm_source=gb-gplus-sharePatent US6448185 - Method for making a semiconductor device that has a dual damascene interconnect
