The invention relates to a method for forming a semiconductor heterostructure by providing a substrate with a first in-plane lattice parameter a1, providing a buffer layer with a second in-plane lattice parameter a2 and providing a top layer over the buffer layer. In order to improve the surface roughness...http://www.google.ca/patents/US7772127?utm_source=gb-gplus-sharePatent US7772127 - Semiconductor heterostructure and method for forming same
