In a semiconductor device including a semiconductor substrate, first and second external terminals, a first impurity diffusion region connected to the first external terminal, and second and third impurity diffusion regions forming a MIS transistor, one of the second and third impurity diffusion regions...http://www.google.ca/patents/US6081013?utm_source=gb-gplus-sharePatent US6081013 - Semiconductor device having a reduced distance between the input resistor and the internal circuit
