A charge coupled device (CCD) having a double layer polysilicon electrode structure and method for making the same are disclosed. The CCD structure provides for alignment of the polysilicon electrodes from one layer to another to eliminate substantially the overlap capacitance normally associated with...http://www.google.ca/patents/US4319261?utm_source=gb-gplus-sharePatent US4319261 - Self-aligned, field aiding double polysilicon CCD electrode structure