A MOS integrated circuit device fabricated utilizing high energy, high current implanting of ions through a layer of oxide to form heavily doped source and drain regions which are self-aligned with a polysilicon gate. A thick portion of the oxide layer adjacent to the polysilicon gate prevents heavy...http://www.google.ca/patents/US5747852?utm_source=gb-gplus-sharePatent US5747852 - LDD MOS transistor with improved uniformity and controllability of alignment 
