Provided are a semiconductor device and a method of manufacturing the same. In the semiconductor device, an insulating layer and a polysilicon layer are formed on a substrate, and a notch region is formed at a portion of the polysilicon layer contacting the insulating layer. The widths of the polysilicon...http://www.google.ca/patents/US20080157234?utm_source=gb-gplus-sharePatent US20080157234 - Semiconductor device and method of manufacturing the same
