The present invention discloses a method for making low-topography buried capacitor including the steps of first depositing oxide layers, and then forming a small pre-contact hole by a dry etch method and a large contact hole by a wet etch method while using silicon nitride caps and sidewall spacers...http://www.google.ca/patents/US5885865?utm_source=gb-gplus-sharePatent US5885865 - Method for making low-topography buried capacitor by a two stage etching process and device made
