The present invention discloses a memory device having memory cells capable of storing three or more charge leves in said memory cell. The cells can be programmed according to a method including a single pulse charge level injection mechanism in said cells. The method does not require a program verify...http://www.google.ca/patents/US6115285?utm_source=gb-gplus-sharePatent US6115285 - Device and method for multi-level charge/storage and reading out
