The present invention is directed to a method for planarizing BARC layer in dual damascene process. For forming a dual damascene interconnect structure, by use of the present invention, a planar topography of the BARC layer is achieved by chemical mechanical polishing. The present invention applies a...http://www.google.ca/patents/US6680252?utm_source=gb-gplus-sharePatent US6680252 - Method for planarizing barc layer in dual damascene process
