A pixel sensor cell for use in a CMOS imager exhibiting improved storage capacitance. The source follower transistor is formed with a large gate that has an area from about 0.3 μm2 to about 10 μm2. The large size of the source follower gate enables the photocharge collector area to be kept small, thereby...http://www.google.ca/patents/US7199405?utm_source=gb-gplus-sharePatent US7199405 - Pixel cell with high storage capacitance for a CMOS imager
