A method for producing a semiconductor device in which dry etching properties are rendered compatible with satisfactory anti-reflection characteristics in far-infrared lithography. An anti-reflective layer 6 is made up of a lower anti-reflective layer 6.sub.L of SiO.sub.X having a relatively...http://www.google.ca/patents/US5674356?utm_source=gb-gplus-sharePatent US5674356 - Method for forming a semiconductor device in which an anti reflective layer is formed by varying the composition thereof 
