The present invention provides a method of preparing a surface of a silicon wafer for formation of HSG structures. The method contemplates providing a wafer having at least one HSG template comprising polysilicon formed in BPSG, the HSG template being covered by silicon dioxide. The wafer is treated...http://www.google.ca/patents/US6828193?utm_source=gb-gplus-sharePatent US6828193 - Methods of forming hemispherical grained silicon on a template on a semiconductor work object
