A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization...http://www.google.ca/patents/US7361519?utm_source=gb-gplus-sharePatent US7361519 - Method of manufacturing a semiconductor device
