Method and apparatus for fabricating contacts to substrate regions through a low k, low density dielectric. A cap is formed over gates and side spacers are formed along the edges of the gates so as to surround the gates in a relatively dense (e.g., silicon dioxide) insulative material. A low k or low...http://www.google.ca/patents/US6124191?utm_source=gb-gplus-sharePatent US6124191 - Self-aligned contact process using low density/low k dielectric
