The invention relates to a phase-change memory device. The device includes a lower electrode disposed in a recess of a first dielectric. The lower electrode comprises a first side and a second side. The first side communicates to a volume of phase-change memory material. The second side has a length...http://www.google.ca/patents/US6649928?utm_source=gb-gplus-sharePatent US6649928 - Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby
