A method is described for filling a high-aspect-ratio feature, in which compatible deposition and etching steps are performed in a sequence. The feature is formed as an opening in a substrate having a surface; a fill material is deposited at the bottom of the feature and on the surface of the substrate;...http://www.google.ca/patents/US6335261?utm_source=gb-gplus-sharePatent US6335261 - Directional CVD process with optimized etchback
