A method for controlling interface layer thickness in high dielectric constant (high-k) film structures found in semiconductor devices. According to one embodiment, the method includes providing a monocrystalline silicon substrate, growing a chemical oxide layer on the monocrystalline silicon substrate...http://www.google.ca/patents/US7741202?utm_source=gb-gplus-sharePatent US7741202 - Method of controlling interface layer thickness in high dielectric constant film structures including growing and annealing a chemical oxide layer
