A capacitor-like MOS structure which provides a fusible link useful in a ROM, redundancy circuit, or the like is disclosed. An oxide layer insulates a polysilicon electrode from a doped substrate region. A potential is applied between the electrode and the doped region of sufficient magnitude to cause...http://www.google.ca/patents/US4543594?utm_source=gb-gplus-sharePatent US4543594 - Fusible link employing capacitor structure
