Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas...http://www.google.ca/patents/US7151053?utm_source=gb-gplus-sharePatent US7151053 - Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications
