The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed...http://www.google.ca/patents/US7045277?utm_source=gb-gplus-sharePatent US7045277 - Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
