A semiconductor device may include at least one pair of spaced apart stress regions, and a strained superlattice layer between the at least one pair of spaced apart stress regions and including a plurality of stacked groups of layers. Each group of layers of the strained superlattice layer may include...http://www.google.ca/patents/US7531828?utm_source=gb-gplus-sharePatent US7531828 - Semiconductor device including a strained superlattice between at least one pair of spaced apart stress regions
