Certain embodiments of the present invention relate to a semiconductor device that has a pad section having an excellent coherency with an interlayer dielectric layer, and a method for manufacturing the same. A semiconductor device 1000 has a pad layer 30A formed over an interlayer dielectric layer 20....http://www.google.ca/patents/US6723628?utm_source=gb-gplus-sharePatent US6723628 - Method for forming bonding pad structures in semiconductor devices
