A Ta barrier slurry for Chemical-Mechanical Polishing (CMP) during copper metallization contains an organic additive which suppresses formation of precipitates and copper staining. The organic additive is chosen from a class of compounds which form multiple strong adsorbant bonds to the surface of silica...http://www.google.ca/patents/US6503418?utm_source=gb-gplus-sharePatent US6503418 - Ta barrier slurry containing an organic additive
