In a MOS semiconductor device utilizing a crystalline silicon substrate, the formation of a parasitic channel is suppressed. A solution of nickel acetate is applied to a silicon substrate 101 to form a layer including nickel indicated by 102. Thermal oxidation is performed to form a field oxide film...http://www.google.ca/patents/US5949115?utm_source=gb-gplus-sharePatent US5949115 - Semiconductor device including nickel formed on a crystalline silicon substrate
