A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses...http://www.google.ca/patents/US20010042861?utm_source=gb-gplus-sharePatent US20010042861 - Light-receiving device with quantum-wave interference layers
