A silicon-nitrogen compound film according to the first aspect of the present invention is made of a material expressed by a compositional formula Si3NxOyHz, where 10≦(3x+2y)≦12, 3.4≦x≦4.0, 0≦y, 0≦z<2.0, the peak-area ratio of a first area of a first peak appearing near a wave number of 2150...http://www.google.ca/patents/US8133577?utm_source=gb-gplus-sharePatent US8133577 - Silicon-nitrogen compound film, and gas-barrier film and thin-film device using the silicon-nitrogen compound film
