A method for producing a semiconductor device comprises a step of forming a first gate insulation layer on a portion of a single crystal silicon substrate and forming a floating gate of polycrystalline silicon on the first gate insulation layer, a step of forming an oxide layer on the exposed portion...http://www.google.ca/patents/US4620361?utm_source=gb-gplus-sharePatent US4620361 - Method for producing a semiconductor device with a floating gate
