A semiconductor device includes a first metallization layer, a first diffusion barrier layer, a first etch stop layer, a dielectric layer and a via extending through the dielectric layer, the first etch stop layer, and the first diffusion barrier layer. The first diffusion barrier layer is disposed over...http://www.google.ca/patents/US7038320?utm_source=gb-gplus-sharePatent US7038320 - Single damascene integration scheme for preventing copper contamination of dielectric layer
