WO2015023025A1 - Method for producing transmission electron microscopy specimen using tripod polishing and focused ion beams - Google Patents

Method for producing transmission electron microscopy specimen using tripod polishing and focused ion beams Download PDF

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WO2015023025A1
WO2015023025A1 PCT/KR2013/009163 KR2013009163W WO2015023025A1 WO 2015023025 A1 WO2015023025 A1 WO 2015023025A1 KR 2013009163 W KR2013009163 W KR 2013009163W WO 2015023025 A1 WO2015023025 A1 WO 2015023025A1
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specimen
transmission electron
electron microscope
polishing
focused ion
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PCT/KR2013/009163
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French (fr)
Korean (ko)
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이종훈
김강식
홍효기
류경희
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국립대학법인 울산과학기술대학교 산학협력단
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Publication of WO2015023025A1 publication Critical patent/WO2015023025A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32Polishing; Etching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/34Purifying; Cleaning

Definitions

  • the present invention relates to a method for manufacturing a transmission electron microscope specimen, and more particularly, to a method for manufacturing a transmission electron microscope specimen for producing a specimen using tripod ploshing and a focused ion beam (focused ion beam).
  • TEM Transmittance Electron Microscopy
  • a technique for producing a very thin specimen of 100 nm or less for a transmission electron microscope is very important.
  • the thinner the specimen the higher the image quality. It is essential to process the sample thinly.
  • a wedge wedge
  • the transmission electron microscope sample manufacturing method for achieving the above object, manufacturing a sandwich specimen, polishing the sandwich specimen in the form of a wedge (wedge), at least one region in the polished specimen And finely etching the front and rear surfaces of the sample using a focused ion beam, and cleaning the finely etched specimen through an ion beam to produce a transmission electron microscope specimen.
  • the present invention provides a transmission electron microscope specimen prepared by the manufacturing method.
  • the transmission electron microscope specimen can be stably manufactured by combining the microscopic visual and washing processes in the wedge polishing process in the specimen fabrication process using the tripod polishing and the specimen fabrication process using the focused ion beam, and multi-location Specimen production is also possible. It also eliminates ion milling in conventional tripod polishing, surface protection, peripheral machining, bottom cutting, probe welding, micro bridge separation, extraction, sample fixation, and probe cutting in conventional focused ion beams. This can shorten the time required.
  • 7A to 7E are views referred to for description of the process of the microscopic vision using the focused ion beam
  • FIG. 8 is a view showing an image after fine etching using a focused ion beam
  • FIG. 1 is a flow chart provided in the description of the method for manufacturing a transmission electron microscope specimen according to an embodiment of the present invention.
  • the transmission electron microscope specimen manufacturing method according to an embodiment of the present invention, wedge (S100), fine etching using a focused ion beam (S110), cleaning using a focused ion beam (S120) process It includes, and the completed specimen may be subjected to specimen analysis via a transmission electron microscope (S130).
  • Applying the wedge in tripod polishing to the bulk specimen may include first side polishing and second side polishing.
  • the first surface polishing or the bottom polishing process is necessary when polishing the bulk specimen, since it is difficult to accurately detect the surface to be viewed on the transmission electron microscope when the operation is performed while the bottom surface is not flat.
  • the first surface polishing process can be polished by fixing the bulk specimen to the Pyrex stub with an adhesive, and then inserting the bulk specimen onto the Pyrex stub and then inserting and polishing the tripod polisher.
  • the first surface polishing process is a process for making the base flat, so that it is not necessary to apply a wedge.
  • polishing was performed in the order of 30 ⁇ m ⁇ 15 ⁇ m ⁇ 3 ⁇ m ⁇ 1 ⁇ m ⁇ 0.5 ⁇ m, and a syton in the form of 0.6 ⁇ m silicon dioxide (SiO 2 ) powder Finish with polishing with polishing cloth.
  • the second surface polishing process involves attaching the flat bottom surface and then applying a wedge.
  • the diamond lapping film and the syton are worked in the same order as the first surface polishing.
  • FIG. 2 illustrates an example of a tripod polisher, which includes a frame 220 constituting a body, three micrometers 210 disposed on the upper surface of the frame 220 at 120 ° intervals, and a lower portion of the frame 220. And a plurality of support pieces 230 which are formed in and whose length is changed by the micrometer 210.
  • the L-shaped bracket 240 is installed over the side and bottom of the frame 220, and the Pyrex stub 250 is mounted to the bent portion of the bracket 240. At this time, the part contacting the bottom surface 270 is a Pyrex stub 250 and the support piece 230.
  • the support piece 230 is leveled with the Pyrex stub 250 while the micrometer 210 is rotated counterclockwise (up) or clockwise (down).
  • the wedge of the specimen is formed, as shown in FIG.
  • Specimen thickness in the edge region where wedges are formed is 1 ⁇ m to 2 ⁇ m.
  • the specimen thickness checking method can be calculated using the wedge angle ⁇ and the distance L between the Pyrex stub 50, as shown in FIG. 3, and is confirmed while polishing with an optical microscope or the like. As shown, the fringe by thickness can be confirmed using reference data.
  • a fine etching process using a focused ion beam is performed on the polished specimen (S110).
  • the ion milling process is performed, but in the method for fabricating a specimen according to the present invention, since the fine etching process using the focused ion beam is performed, the ion milling process may be omitted.
  • the focused ion beam apparatus scans a very thin focused ion beam onto the material surface to process the material surface. The smaller the thickness of the wedge polished specimen, the smaller the thickness to be finely etched by the focused ion beam, thereby reducing the overall time required to fabricate the specimen.
  • 7A to 7E are views referred to for describing a process of fine etching using a focused ion beam.
  • the left window 320 is a scanning electron microscope window, which allows a user to observe a specimen while using a focused ion beam. It's a window.
  • the middle window 330 is a window for the ion beam and displays a task to be performed by the user.
  • the right window 340 is a window displaying the setting and related information on the etching process through the ion beam, and may set the width (x), the thickness (y), the penetration depth (z) and the like.
  • FIGS. 7B and 7C are screens of a first fine milling process.
  • 7D and 7E are screens of a second fine milling process.
  • the front and back surfaces of the wedge polished specimen are locally etched by a focused ion beam.
  • the polished specimen is mounted on the sample holder of the focused ion beam apparatus, and the front and rear portions of the specimen are etched by scanning the ion beam to the upper surface of the polished specimen.
  • the width x may be set to about 6 ⁇ m
  • the thickness y to about 2 ⁇ m
  • the penetration depth z may be about 2 ⁇ m
  • the current density of the focused ion beam may be about 20 to 30 mA (Pico ampere). It is possible to finely etch the specimen by making it very small. These figures may vary depending on which sample the specimen is manufactured. Through this method, the front surface is finely etched and the back surface is etched repeatedly, thereby producing multiple specimens.
  • a cleaning process is performed (S120).
  • the cleaning process uses the same gallium (Ga) ions as the fine etching, but only the cleaning is performed by weakening the voltage and current values differently from the fine etching process. .
  • the transmission electron microscope specimen is manufactured, the analysis of the specimen using the transmission electron microscope may be performed (S130).
  • the transmission electron microscope specimen can be produced quickly and stably.
  • the specimen manufacturing method according to the present invention it is possible to produce about 10 specimens in 3 hours.
  • the use of automated processes can improve yield.
  • the difference between the specimen fabrication method according to the present invention and the specimen fabrication method using a general focused ion beam is that, in the specimen fabrication method according to the present invention, surface protection, peripheral processing, bottom cutting, probe welding, micro-bridge separation in a general focused ion beam process A total of eight processes, extraction, sample holding and probe cutting, are omitted, and the elimination of the lift-out process for bulk specimens can reduce overall manufacturing time and ensure stability.
  • the conventional process proceeds from the fine etching using the focused ion beam, because the thickness of the specimen is thick, the fine etching process takes a very long time and the efficiency decreases.
  • ion milling is a process of etching the specimen by irradiating the Ar + ion beam, the specimen may be damaged during ion milling, and it may not be able to precisely etch a portion to be accurately analyzed.
  • FIG. 8 is a view showing an image after fine etching using a focused ion beam
  • FIG. 9 is a view showing an image of a transmission electron microscope for a specimen.
  • the specimen fabrication method according to the present invention minimizes the thickness of the specimen itself through a tripod polishing process (1 to 2 ⁇ m), it is required for the entire process, in contrast to the conventional focused ion beam or tripod polishing method.
  • the time taken can be reduced by five times or more.
  • multi-location specimens may be fabricated using a focused ion beam.
  • steps S360 to S390 for wedge polishing, fine etching using the focused ion beam, cleaning using the focused ion beam, and specimen analysis are the same as those described in the above-described embodiment.
  • sandwich specimens 401 and 403 as shown in FIG. 11 are used.
  • the deposited surfaces face each other and are bonded by applying epoxy 410 therebetween.
  • Epoxy 410 is easy to analyze the specimen because it is transparent when observed by a transmission electron microscope, as well as the effect of preventing damage to the deposited surface as well as adhesion.
  • the polishing and subsequent steps are the same as for the bulk specimen described above.
  • the transmission electron microscope specimen manufacturing method according to the invention is not limited to the configuration and method of the embodiments described as described above, the embodiments are all or all of the embodiments so that various modifications can be made Some may be optionally combined.
  • the invention can be used to fabricate specimens for transmission electron microscopy using tripod ploshing and focused ion beams.

Abstract

The present invention relates to a method for producing a transmission electron microscopy specimen. The method for producing a specimen, according to the present invention, produces a transmission electron microscopy specimen by polishing a bulk specimen into a wedge shape, using a focused ion beam to finely etch the front and rear surface of at least one area of the polished specimen, and cleaning the finely etched specimen. The present invention enables a transmission electron microscopy specimen to be produced in a stable manner and reduces the amount of time required for production.

Description

트라이포드 폴리싱과 집속 이온빔을 이용한 투과전자현미경 시편 제작방법Method of fabricating transmission electron microscope specimen using tripod polishing and focused ion beam
본 발명은 투과전자현미경 시편 제작방법에 관한 것으로, 더욱 상세하게는 트라이포드 폴리싱(tripod ploshing)과 집속 이온빔(focused ion beam)을 이용하여 시편을 제작하는 투과전자현미경 시편 제작방법에 관한 것이다.The present invention relates to a method for manufacturing a transmission electron microscope specimen, and more particularly, to a method for manufacturing a transmission electron microscope specimen for producing a specimen using tripod ploshing and a focused ion beam (focused ion beam).
투과전자현미경(Transmision Electron Microscopy,TEM)은, 일반적으로 많이 사용되어지는 광학현미경과 작동원리는 기본적으로 비슷할 수 있지만, 광원과 광원 렌즈 대신에 전압을 가하여 가속되어지는 전자 빔으로 시편을 투과하고 상의 배율을 조절하기 위하여 전자 렌즈를 적용함으로써 사용하는 현미경이다.Transmittance Electron Microscopy (TEM), although the principle of operation may be similar to that of commonly used optical microscopes, it is possible to transmit the specimen through an electron beam that is accelerated by applying a voltage instead of the light source and the light source lens. It is a microscope used by applying an electron lens to adjust the magnification.
전자빔이 물질에 입사되면, 시편과 전자가 상호작용하여 여러 가지 현상이 발생하는데, 투과전자현미경은 이중에서 시편의 얇은 부분을 투과한 전자들을 이용한다. 즉, 관찰하고자 하는 재료의 파장보다 작은 가속 전자를 발생하여 매질에 투과시키면 결정면이나 결함 등의 정도에 따라 투과할 수 있는 전자빔의 세기차가 발생하게 되고, 투과된 빔 세기 차이는 형광스크린에서 명암으로 나타나는 것이다.When an electron beam is incident on a material, various phenomena occur due to the interaction between the specimen and the electron, and the transmission electron microscope uses electrons transmitted through a thin portion of the specimen. In other words, if the accelerated electrons smaller than the wavelength of the material to be observed are transmitted through the medium, the difference in the intensity of the electron beam that can be transmitted is generated according to the degree of crystal plane or defect, and the transmitted beam intensity difference is changed from the fluorescent screen to the contrast. Appear.
이러한 투과전자현미경을 이용하여 특정 물질을 효과적으로 분석하기 위해서는 투과전자현미경용으로 100nm 이하의 매우 얇은 시편을 제작하는 기술이 매우 중요하며, 투과전자현미경은 시편의 두께가 얇을수록 이미지의 품질이 높아지기 때문에 시료의 두께를 얇게 가공하는 것이 필수적이다. In order to effectively analyze a specific material using such a transmission electron microscope, a technique for producing a very thin specimen of 100 nm or less for a transmission electron microscope is very important. In a transmission electron microscope, the thinner the specimen, the higher the image quality. It is essential to process the sample thinly.
그러나, 연마의 정확도와 깨지기 쉬운 재료를 취급하는데 따른 어려움 등으로 인하여 투과전자현미경에서 사용하는 시편을 제작하는데 많은 시간이 소요되며, 안정적으로 시편을 제작하기도 어렵다. However, due to the accuracy of polishing and the difficulty in handling fragile materials, it takes a lot of time to produce a specimen for use in a transmission electron microscope, and it is also difficult to stably manufacture the specimen.
따라서, 투과전자현미경용 시편 제작의 안정성을 향상시키면서, 전체적으로 시편 제작에 소요되는 시간도 단축할 수 있도록 하는 방안이 필요하다.Therefore, there is a need for a method for improving the stability of specimen fabrication for transmission electron microscopy and reducing the time required for specimen fabrication as a whole.
따라서, 본 발명의 목적은, 제작에 소요되는 시간을 단축하면서도 안정적으로 투과전자현미경에 사용하는 시편을 제작할 수 있는 투과전자현미경 시편 제작방법을 제공함에 있다. Accordingly, it is an object of the present invention to provide a method for producing a transmission electron microscope specimen that can stably produce a specimen for use in a transmission electron microscope while reducing the time required for production.
상기 목적을 달성하기 위한 본 발명에 따른 투과전자현미경 시편 제작방법은, 벌크 시편을 웨지(wedge) 형태로 폴리싱하는 단계, 상기 폴리싱 된 시편에서 적어도 하나의 영역의 전면 및 배면을 집속 이온빔을 이용하여 미세 식각하는 단계, 및 상기 미세 식각된 시편을 클리닝하여, 투과전자현미경용 시편을 제작하는 단계를 포함한다.In the method for fabricating a transmission electron microscope specimen according to the present invention for achieving the above object, the step of polishing a bulk specimen in the form of a wedge (wedge), using a focused ion beam on the front and back of at least one region of the polished specimen Etching fine, and cleaning the finely etched specimen to produce a transmission electron microscope specimen.
또한, 상기 목적을 달성하기 위한 본 발명에 따른 투과전자현미경 시료 제작방법은, 샌드위치 시편을 제작하는 단계, 상기 샌드위치 시편을 웨지(wedge) 형태로 폴리싱하는 단계, 상기 폴리싱 된 시편에서 적어도 하나의 영역의 전면 및 배면을 집속 이온빔을 이용하여 미세 식각하는 단계, 및 상기 미세 식각된 시편을 재차 이온빔을 통하여 클리닝하여, 투과전자현미경용 시편을 제작하는 단계를 포함한다.In addition, the transmission electron microscope sample manufacturing method according to the present invention for achieving the above object, manufacturing a sandwich specimen, polishing the sandwich specimen in the form of a wedge (wedge), at least one region in the polished specimen And finely etching the front and rear surfaces of the sample using a focused ion beam, and cleaning the finely etched specimen through an ion beam to produce a transmission electron microscope specimen.
그리고, 상기 목적을 달성하기 위하여 본 발명에서는, 상기 제조방법에 의해 제조되는 투과전자현미경용 시편을 제공한다. And, in order to achieve the above object, the present invention provides a transmission electron microscope specimen prepared by the manufacturing method.
본 발명에 따르면, 트라이포드 폴리싱을 이용한 시편 제작 과정에서 웨지 폴리싱 과정과, 집속 이온빔을 이용한 시편 제작 과정에서 미세 시각 및 세척 과정을 결합하여 투과전자현미경 시편을 안정적으로 제작할 수 있으며, 다중(multi location) 시편의 제작도 가능하다. 또한, 일반적인 트라이포드 폴리싱에서 이온 밀링 과정과, 일반적인 집속 이온빔에서 표면 보호, 주변부 가공, 밑면 절단, 프루브 용접, 마이크로 교량 분리, 추출, 샘플 고정, 프루브 절단 등의 과정을 거치지 않으므로, 전체적으로 시편 제작에 소요되는 시간을 단축할 수 있다.According to the present invention, the transmission electron microscope specimen can be stably manufactured by combining the microscopic visual and washing processes in the wedge polishing process in the specimen fabrication process using the tripod polishing and the specimen fabrication process using the focused ion beam, and multi-location Specimen production is also possible. It also eliminates ion milling in conventional tripod polishing, surface protection, peripheral machining, bottom cutting, probe welding, micro bridge separation, extraction, sample fixation, and probe cutting in conventional focused ion beams. This can shorten the time required.
도 1은 본 발명의 일실시예에 따른 시편 제작방법에 대한 설명에 제공되는 흐름도,1 is a flow chart provided in the description of the specimen manufacturing method according to an embodiment of the present invention,
도 2는 트라이포드 폴리셔의 일 예를 나타낸 도면,2 shows an example of a tripod polisher,
도 3은 트라이포드 폴리셔를 이용하여 각을 조절하여 웨지를 주는 방법에 대한 설명에 참조되는 도면,3 is a reference to the description of the method for giving a wedge by adjusting the angle using a tripod polisher,
도 4는 파이렉스 스터브에 각을 주어진 경우를 설명하기 위해 참조되는 도면,4 is a diagram referred to to explain the case given an angle to a Pyrex stub;
도 5는 실리콘 두께에 따라 광학 현미경에서 보이는 색깔을 설명하기 위해 참조되는 도면,5 is a view referred to to explain the color seen in the optical microscope according to the silicon thickness,
도 6은 시편을 구리 그리드에 올렸을 때를 나타낸 도면,6 is a view showing when the specimen is mounted on a copper grid,
도 7a 내지 도 7e는 집속 이온빔을 이용한 미세 시각의 공정에 대한 설명에 참조되는 도면,7A to 7E are views referred to for description of the process of the microscopic vision using the focused ion beam,
도 8은 집속 이온빔을 이용한 미세 식각 후 이미지를 나타낸 도면, 8 is a view showing an image after fine etching using a focused ion beam,
도 9는 시편에 대한 투과전자현미경의 이미지를 나타낸 도면,9 shows an image of a transmission electron microscope for a specimen,
도 10은 본 발명의 다른 실시예에 따른 시편 제작방법에 대한 설명에 제공되는 흐름도, 그리고10 is a flow chart provided in the description of the specimen manufacturing method according to another embodiment of the present invention, and
도 11은 샌드위치 시편에 대한 설명에 참조되는 도면이다. 11 is a view referred to for the description of the sandwich specimen.
이하에서는 도면을 참조하여 본 발명을 보다 상세하게 설명한다. Hereinafter, with reference to the drawings will be described the present invention in more detail.
도 1은 본 발명의 일실시예에 따른 투과전자현미경 시편 제작방법에 대한 설명에 제공되는 흐름도이다. 1 is a flow chart provided in the description of the method for manufacturing a transmission electron microscope specimen according to an embodiment of the present invention.
도 1을 참조하면, 본 발명의 일실시예에 따른 투과전자현미경 시편 제작방법은, 웨지(wedge) 폴리싱(S100), 집속 이온빔을 이용한 미세 식각(S110), 집속 이온빔을 이용한 클리닝(S120) 과정을 포함하며, 완성된 시편은 투과전자현미경을 통해 시편 분석이 진행될 수 있다(S130). Referring to Figure 1, the transmission electron microscope specimen manufacturing method according to an embodiment of the present invention, wedge (S100), fine etching using a focused ion beam (S110), cleaning using a focused ion beam (S120) process It includes, and the completed specimen may be subjected to specimen analysis via a transmission electron microscope (S130).
도 1에 도시한 각 단계별 과정을 설명하면 다음과 같다. 먼저, 분석할 대상에 대한 벌크 시편을 준비하여, 준비된 벌크 시편에 대하여 트라이포드 폴리싱을 이용하여 웨지(wedge)를 가하는 웨지 폴리싱을 수행한다(S100). 기본적으로 벌크 시편은 분석할 시료의 커팅(cutting) 만을 통하여 준비할 수 있다. 그러나, 특별히 박막 시편의 계면(界面)을 보고 싶은 경우에는 두 면을 접착시켜 샌드위치처럼 시편을 만드는 과정이 필요하다.Referring to each step process shown in Figure 1 as follows. First, bulk specimens for the object to be analyzed are prepared, and wedge polishing is performed by applying wedges to the prepared bulk specimens using tripod polishing (S100). Basically, bulk specimens can be prepared only by cutting the sample to be analyzed. However, if you want to see the interface of the thin film specimens in particular, it is necessary to bond the two surfaces to make the specimen like a sandwich.
벌크 시편에 대하여 트라이포드 폴리싱에서의 웨지를 가해주는 과정은, 제1면 폴리싱(first side polishing)과 제2면 폴리싱(second side polishing) 과정을 포함할 수 있다. Applying the wedge in tripod polishing to the bulk specimen may include first side polishing and second side polishing.
제1면 폴리싱, 혹은 밑면 폴리싱 과정은, 벌크 시편을 폴리싱할 때, 밑면이 평편하지 않은 상태에서 작업을 수행하는 경우, 투과전자현미경 상에서 보고자 하는 면을 정확하게 검출하기 어렵기 때문에 필요한 과정이다.The first surface polishing or the bottom polishing process is necessary when polishing the bulk specimen, since it is difficult to accurately detect the surface to be viewed on the transmission electron microscope when the operation is performed while the bottom surface is not flat.
제1면 폴리싱 과정은, 벌크 시편을 접착제로 파이렉스 스터브에 고정시킨 후, 벌크 시편을 파이렉스 스터브에 얹혀서 끼워서 폴리싱할 수 있는 장비인 트라이포드 폴리셔에 끼워서 폴리싱할 수 있다. The first surface polishing process can be polished by fixing the bulk specimen to the Pyrex stub with an adhesive, and then inserting the bulk specimen onto the Pyrex stub and then inserting and polishing the tripod polisher.
제1면 폴리싱 과정은, 밑면을 평편하게 만들고자 하는 과정이므로, 웨지를 가하지 않아도 된다. 폴리싱 휠에 다이아몬드 랩핑 필름(diamond lapping film)을 사용하여, 30㎛ → 15㎛ → 3㎛ → 1㎛ → 0.5㎛와 같은 순서대로 폴리싱을 하고, 0.6 ㎛의 이산화규소(SiO2) 파우더 형태인 syton으로 연마천에서 연마하는 마무리 작업을 한다.The first surface polishing process is a process for making the base flat, so that it is not necessary to apply a wedge. Using a diamond lapping film on the polishing wheel, polishing was performed in the order of 30 μm → 15 μm → 3 μm → 1 μm → 0.5 μm, and a syton in the form of 0.6 μm silicon dioxide (SiO 2 ) powder Finish with polishing with polishing cloth.
제1면 폴리싱을 통해서 밑면이 평편하게 되면, 평편한 밑면을 밑으로 붙인 후, 웨지를 가해주는 과정이 수반된 제2면 폴리싱 과정을 수행하게 된다. 이 과정에서도, 제1면 폴리싱과 같은 순서로 다이아몬드 랩핑 필름과 syton을 이용하여 작업한다.When the bottom surface becomes flat through the first surface polishing, the second surface polishing process involves attaching the flat bottom surface and then applying a wedge. In this process, the diamond lapping film and the syton are worked in the same order as the first surface polishing.
도 2는 트라이포드 폴리셔의 일 예를 도시한 것으로, 몸체를 이루는 프레임(220), 프레임(220)의 상면에 120° 간격으로 배치된 3개의 마이크로미터(210), 프레임(220)의 하부에 형성되고 마이크로미터(210)에 의해 길이가 변하는 복수의 지지편(230)을 포함한다. 프레임(220)의 측면과 하부에 걸쳐 L자형의 브라켓(240)을 설치하고, 파이렉스 스터브(250)를 브라켓(240)의 절곡부에 장착한다. 이때, 바닥면(270)과 닿는 부분은 파이렉스 스터브(250)와 지지편(230)이다.2 illustrates an example of a tripod polisher, which includes a frame 220 constituting a body, three micrometers 210 disposed on the upper surface of the frame 220 at 120 ° intervals, and a lower portion of the frame 220. And a plurality of support pieces 230 which are formed in and whose length is changed by the micrometer 210. The L-shaped bracket 240 is installed over the side and bottom of the frame 220, and the Pyrex stub 250 is mounted to the bent portion of the bracket 240. At this time, the part contacting the bottom surface 270 is a Pyrex stub 250 and the support piece 230.
마이크로미터(210)를 반 시계 방향(올라감)이나 시계 방향(내려감)으로 돌려주면서 지지편(230)과 파이렉스 스터브(250)의 수평을 맞춘다. The support piece 230 is leveled with the Pyrex stub 250 while the micrometer 210 is rotated counterclockwise (up) or clockwise (down).
이후 시편(260)을 파이렉스 스터브(250)에 부착한 후, 도 3에서 도시한 바와 같이, 웨지를 주고자 하는 만큼 시계 방향으로 마이크로미터(210)를 돌려서 트라이포드 폴리싱 준비를 한 후, 폴리싱 과정을 수행할 수 있다.After attaching the specimen 260 to the Pyrex stub 250, as shown in Figure 3, to prepare the tripod polishing by turning the micrometer 210 in the clockwise direction to give a wedge, the polishing process Can be performed.
폴리싱이 끝나게 되면, 도 4에 도시한 바와 같이, 시편의 웨지가 형성된다. 웨지가 형성된 가장자리 영역의 시편 두께는 1㎛ ~ 2㎛ 이다. 시편 두께 확인 방법은, 도 3에 도시한 바와 같이, 웨지 각도(β)와 파이렉스 스터브(50)와의 거리(L)를 이용하여 계산할 수 있으며, 광학현미경 등을 통하여 폴리싱 하면서 확인해 가면, 도 5에 도시한 바와 같이, 두께별 줄무늬(fringe)를 참고 자료를 활용하여 확인이 가능하다. When polishing is finished, the wedge of the specimen is formed, as shown in FIG. Specimen thickness in the edge region where wedges are formed is 1 μm to 2 μm. The specimen thickness checking method can be calculated using the wedge angle β and the distance L between the Pyrex stub 50, as shown in FIG. 3, and is confirmed while polishing with an optical microscope or the like. As shown, the fringe by thickness can be confirmed using reference data.
이와 같은 폴리싱 과정이 끝난 후, 도 6에 도시한 바와 같이, 시편(310)을 반으로 자른 구리 그리드(310)에 접착제를 이용하여 접합 후, 다음 과정인 집속 이온빔을 이용한 다중 시편을 제작할 준비를 한다. After the polishing process is finished, as shown in FIG. 6, after bonding the specimen 310 to the copper grid 310 cut in half using an adhesive, preparing for fabricating a multiple specimen using a focused ion beam, which is the next process. do.
다음으로 폴리싱된 시편에 대하여 집속이온빔(Focused Ion Beam, FIB)을 이용한 미세 식각 과정이 수행된다(S110). 일반적인 폴리싱 과정에서는 이온 밀링 과정이 수행되지만, 본 발명에 따른 시편 제작방법에서는 집속 이온빔을 이용한 미세 식각 과정이 수행되므로, 이온 밀링 과정이 생략되어질 수 있다. 집속 이온빔 장치는 매우 가늘게 집속한 이온빔을 재료 표면에 주사하여 재료 표면을 가공한다. 웨지 폴리싱된 시편의 두께가 작으면 작을수록 집속 이온빔에 의해 미세 식각해야 할 두께가 감소되어 시편 제작에 소요되는 전체 시간이 감소한다. Next, a fine etching process using a focused ion beam (FIB) is performed on the polished specimen (S110). In the general polishing process, the ion milling process is performed, but in the method for fabricating a specimen according to the present invention, since the fine etching process using the focused ion beam is performed, the ion milling process may be omitted. The focused ion beam apparatus scans a very thin focused ion beam onto the material surface to process the material surface. The smaller the thickness of the wedge polished specimen, the smaller the thickness to be finely etched by the focused ion beam, thereby reducing the overall time required to fabricate the specimen.
도 7a 내지 도 7e는 집속 이온빔을 이용한 미세 식각의 공정에 대한 설명에 참조되는 도면이다. 7A to 7E are views referred to for describing a process of fine etching using a focused ion beam.
도 7a 내지 도 7e은, 집속 이온빔을 이용한 미세 식각 과정에서 디스플레이부에 표시되는 창의 일 예로서, 왼쪽 창(320)은 주사전자현미경창으로써 사용자가 집속 이온빔을 사용하면서 시편을 관찰할 수 있도록 하는 창이다. 가운데 창(330)은 이온빔에 대한 창으로써 사용자가 하고자 하는 작업을 표시하는 창이다. 오른쪽 창(340)은 이온빔을 통한 식각 과정에 대한 설정 및 관련 정보를 표시하는 창이으로, 폭(x), 두께(y), 침투 깊이(z) 등을 설정할 수 있다.7A to 7E illustrate an example of a window displayed on a display unit during a fine etching process using a focused ion beam. The left window 320 is a scanning electron microscope window, which allows a user to observe a specimen while using a focused ion beam. It's a window. The middle window 330 is a window for the ion beam and displays a task to be performed by the user. The right window 340 is a window displaying the setting and related information on the etching process through the ion beam, and may set the width (x), the thickness (y), the penetration depth (z) and the like.
도 7a는 투과전자현미경과 이온(Ion)창의 기준점을 찾는 화면이며, 도 7b와 도 7c는 First fine milling 과정의 화면이다. 그리고 도 7d와 도 7e는 Second fine milling 과정의 화면이다. 7A is a screen for finding a reference point of a transmission electron microscope and an ion window, and FIGS. 7B and 7C are screens of a first fine milling process. 7D and 7E are screens of a second fine milling process.
이와 같은 화면을 참조하여, 웨지 폴리싱 된 시편에서 전면 및 배면을 집속 이온빔에 의해 국부적으로 식각한다. 구체적으로, 폴리싱 된 시편을 집속 이온빔 장치의 시료 홀더에 장착하고, 폴리싱 된 시편의 상부 면으로 이온빔을 주사하여 시편의 전면 및 배면 부위를 식각한다. 이때, 폭(x)은 대략 6㎛, 두께(y)는 대략 2㎛, 그리고 침투 깊이(z)는 대략 2㎛로 설정할 수 있고, 집속 이온빔의 전류 밀도를 20 내지 30㎀(Pico ampere) 정도로 아주 작게 하여 시편을 미세 식각할 수 있다. 이와 같은 수치는 어떤 시료에 대한 시편을 제작하는가에 따라 달라질 수 있다. 이러한 방법을 통해 전면을 미세 식각 후 배면을 식각 하는 공정을 반복하여, 다중 시편을 제작할 수 있다.Referring to this screen, the front and back surfaces of the wedge polished specimen are locally etched by a focused ion beam. Specifically, the polished specimen is mounted on the sample holder of the focused ion beam apparatus, and the front and rear portions of the specimen are etched by scanning the ion beam to the upper surface of the polished specimen. At this time, the width x may be set to about 6 μm, the thickness y to about 2 μm, and the penetration depth z may be about 2 μm, and the current density of the focused ion beam may be about 20 to 30 mA (Pico ampere). It is possible to finely etch the specimen by making it very small. These figures may vary depending on which sample the specimen is manufactured. Through this method, the front surface is finely etched and the back surface is etched repeatedly, thereby producing multiple specimens.
이와 같은 미세 식각 과정이 완료되면 클리닝 과정을 수행한다(S120). 클리닝 과정은 미세 식각과 동일한 갈륨(Ga) 이온을 사용하지만 전압과 전류 값을 미세 식각 과정과 다르게 아주 약하게 하여 세척만 하는 과정이다. .When the fine etching process is completed, a cleaning process is performed (S120). The cleaning process uses the same gallium (Ga) ions as the fine etching, but only the cleaning is performed by weakening the voltage and current values differently from the fine etching process. .
집속 이온빔을 이용한 미세 식각 과정과 클리닝 과정이 종료하여 투과전자현미경 시편이 제작되면, 투과전자현미경을 통한 시편 분석을 진행할 수 있다(S130).After the fine etching process and the cleaning process using the focused ion beam is finished, the transmission electron microscope specimen is manufactured, the analysis of the specimen using the transmission electron microscope may be performed (S130).
이와 같은 과정에 의해, 투과전자현미경 시편을 빠르고 안정적으로 제작할 수 있다. 예컨대, 본 발명에 따른 시편 제작방법을 사용하면, 3시간에 10개 정도의 시편을 제작할 수 있다. 또한, 자동화 공정을 적용한다면 수율을 향상시킬 수 있다. By this process, the transmission electron microscope specimen can be produced quickly and stably. For example, using the specimen manufacturing method according to the present invention, it is possible to produce about 10 specimens in 3 hours. In addition, the use of automated processes can improve yield.
본 발명에 따른 시편 제작방법과 일반적인 집속 이온빔을 이용한 시편 제작 방법과의 차이점은, 본 발명에 따른 시편 제작방법에서는 일반적인 집속이온빔 과정에서 거치는 표면 보호, 주변부 가공, 밑면 절단, 프루브 용접, 마이크로 교량 분리, 추출, 샘플 고정 및 프루브 절단이라는 총 8개의 공정이 생략되며, 벌크 시편에 있어서 lift-out 과정의 생략에 따라 전체적인 제작 시간을 단축할 수 있을 뿐만 아니라, 안정성도 확보할 수 있다. 또한, 기존에 집속 이온빔을 이용하여 미세 식각부터 공정을 진행한다고 하여도 시편의 두께가 두껍기 때문에 미세 식각 공정 시간이 매우 오래 걸려 효율성이 떨어진다.The difference between the specimen fabrication method according to the present invention and the specimen fabrication method using a general focused ion beam is that, in the specimen fabrication method according to the present invention, surface protection, peripheral processing, bottom cutting, probe welding, micro-bridge separation in a general focused ion beam process A total of eight processes, extraction, sample holding and probe cutting, are omitted, and the elimination of the lift-out process for bulk specimens can reduce overall manufacturing time and ensure stability. In addition, even if the conventional process proceeds from the fine etching using the focused ion beam, because the thickness of the specimen is thick, the fine etching process takes a very long time and the efficiency decreases.
또한, 기존에 일반적으로 트라이포드 폴리셔를 이용한 시편 제작 방법과의 차이점은 이온 밀링(ion milling) 과정이 없다는 점이다. 이온 밀링은 Ar+ 이온 빔을 시편에 조사하여 식각하는 공정이므로, 이온 밀링시 시편이 손상을 입을 수 있고, 정확하게 분석하고자 하는 부위를 세밀하게 식각할 수 없다는 단점이 있다.In addition, the difference from the specimen manufacturing method using a conventional tripod polisher is that there is no ion milling (ion milling) process. Since ion milling is a process of etching the specimen by irradiating the Ar + ion beam, the specimen may be damaged during ion milling, and it may not be able to precisely etch a portion to be accurately analyzed.
도 8은 집속 이온빔을 이용한 미세 식각 후 이미지를 나타낸 도면이고, 도 9는 시편에 대한 투과전자현미경의 이미지를 나타낸 도면이다. FIG. 8 is a view showing an image after fine etching using a focused ion beam, and FIG. 9 is a view showing an image of a transmission electron microscope for a specimen.
본 발명에 따른 시편 제작방법은, 트라이포드 폴리싱 과정을 통해 시편 자체의 두께를 최소화(1~2㎛) 하였으므로, 기존에 일반적으로 시행했던 집속 이온빔이나 트라이포드 폴리싱 방법과 대비하여, 전체 공정에 소요되는 시간을 5배 이상 단축할 수 있다. 또한, 집속 이온빔을 이용하여 다중(multi location) 시편을 제작할 수 있다. Since the specimen fabrication method according to the present invention minimizes the thickness of the specimen itself through a tripod polishing process (1 to 2 μm), it is required for the entire process, in contrast to the conventional focused ion beam or tripod polishing method. The time taken can be reduced by five times or more. In addition, multi-location specimens may be fabricated using a focused ion beam.
도 10은 본 발명의 다른 실시예에 따른 시편 제작방법에 대한 설명에 제공되는 흐름도이다.10 is a flow chart provided in the description of the specimen manufacturing method according to another embodiment of the present invention.
본 실시예에서, 웨지(wedge) 폴리싱, 집속 이온빔을 이용한 미세 식각, 집속 이온빔을 이용한 클리닝, 시편 분석을 하는 S360 내지 S390 단계의 과정은, 전술한 실시예에서 설명한 바와 동일하다. In the present embodiment, the processes of steps S360 to S390 for wedge polishing, fine etching using the focused ion beam, cleaning using the focused ion beam, and specimen analysis are the same as those described in the above-described embodiment.
다만, 본 실시예에서는, 도 11에 도시한 바와 같은, 샌드위치 시편(401, 403)을 사용한다. 샌드위치 시편(401, 403)의 경우 증착된 면이 서로 마주보고 그 사이에 에폭시(epoxy)(410)를 발라서 접착시켜 준다. 에폭시(410)는 접착뿐만 아니라 증착된 면의 손상을 막아주는 효과뿐만 아니라, 투과전자현미경으로 관찰시 투명하기 때문에 시편을 분석하기에도 용이하다. 폴리싱하는 과정 및 그 이후의 과정은 전술한 벌크 시편의 경우와 동일하다. In this embodiment, however, sandwich specimens 401 and 403 as shown in FIG. 11 are used. In the case of sandwich specimens 401 and 403, the deposited surfaces face each other and are bonded by applying epoxy 410 therebetween. Epoxy 410 is easy to analyze the specimen because it is transparent when observed by a transmission electron microscope, as well as the effect of preventing damage to the deposited surface as well as adhesion. The polishing and subsequent steps are the same as for the bulk specimen described above.
한편, 본 발명에 따른 투과전자현미경 시편 제작방법은 상기한 바와 같이 설명된 실시예들의 구성과 방법이 한정되게 적용될 수 있는 것이 아니라, 상기 실시예들은 다양한 변형이 이루어질 수 있도록 각 실시예들의 전부 또는 일부가 선택적으로 조합되어 구성될 수도 있다.On the other hand, the transmission electron microscope specimen manufacturing method according to the invention is not limited to the configuration and method of the embodiments described as described above, the embodiments are all or all of the embodiments so that various modifications can be made Some may be optionally combined.
또한, 이상에서는 본 발명의 바람직한 실시예에 대하여 도시하고 설명하였지만, 본 발명은 상술한 특정의 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 기술분야에서 통상의 지식을 가진자에 의해 다양한 변형실시가 가능한 것은 물론이고, 이러한 변형실시들은 본 발명의 기술적 사상이나 전망으로부터 개별적으로 이해되어서는 안될 것이다.In addition, although the preferred embodiment of the present invention has been shown and described above, the present invention is not limited to the specific embodiments described above, but the technical field to which the invention belongs without departing from the spirit of the invention claimed in the claims. Of course, various modifications can be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.
본 발명은 트라이포드 폴리싱(tripod ploshing)과 집속 이온빔(focused ion beam)을 이용하여 투과전자현미경용 시편을 제작하는데 사용할 수 있다. The invention can be used to fabricate specimens for transmission electron microscopy using tripod ploshing and focused ion beams.

Claims (13)

  1. 벌크 시편을 웨지(wedge) 형태로 폴리싱하는 단계;Polishing the bulk specimen in the form of a wedge;
    상기 폴리싱된 시편에서 적어도 하나의 영역의 전면 및 배면을 집속 이온빔을 이용하여 미세 식각하는 단계; 및Fine etching the front and back surfaces of at least one region of the polished specimen using a focused ion beam; And
    상기 미세 식각된 시편을 클리닝하여, 투과전자현미경용 시편을 제작하는 단계를 포함하는 투과전자현미경 시편 제작방법.A method of manufacturing a transmission electron microscope specimen comprising cleaning the finely etched specimen to produce a specimen for transmission electron microscope.
  2. 제1항에 있어서,The method of claim 1,
    상기 폴리싱하는 단계는, 제1면을 평편하게 만드는 과정, 및 상기 제1면을 밑면으로 하여 제2면을 웨지 형태로 폴리싱하는 과정을 포함하는 투과전자현미경 시편 제작방법.The polishing may include: making the first surface flat, and polishing the second surface into a wedge shape using the first surface as a bottom surface.
  3. 제1항에 있어서,The method of claim 1,
    상기 폴리싱 과정은, 트라이포드 폴리셔를 이용하여 수행하는 것을 특징으로 하는 투과전자현미경 시편 제작방법.The polishing process is a transmission electron microscope specimen manufacturing method, characterized in that performed using a tripod polisher.
  4. 제1항에 있어서,The method of claim 1,
    상기 미세 식각하는 단계에서, 폭(x)은 5㎛ 내지 7㎛, 두께(y)는 1㎛ 내지 3㎛, 침투 깊이(z)는 1㎛ 내지 3㎛, 집속 이온빔의 전류 밀도는 20㎀ 내지 30㎀로 설정하는 것을 특징으로 하는 투과전자현미경 시편 제작방법.In the fine etching step, the width x is 5 μm to 7 μm, the thickness y is 1 μm to 3 μm, the penetration depth z is 1 μm to 3 μm, and the current density of the focused ion beam is 20 μs to Method of producing a transmission electron microscope specimen, characterized in that set to 30㎀.
  5. 제1항에 있어서,The method of claim 1,
    상기 폴리싱된 시편의 두께는, 1㎛ 내지 2㎛인 것을 특징으로 하는 투과전자현미경 시편 제작방법.The thickness of the polished specimen is a transmission electron microscope specimen, characterized in that 1㎛ 2㎛.
  6. 제1항에 있어서,The method of claim 1,
    상기 클리닝은, 상기 미세 식각하는 과정보다 전압과 전류값을 낮게하여 세척하는 과정인 것을 특징으로 하는 투과전자현미경 시편 제작방법.The cleaning is a transmission electron microscope specimen manufacturing method, characterized in that the process of washing by lowering the voltage and current value than the process of fine etching.
  7. 제1항 내지 제6항 중 어느 한 항의 제조방법에 의해 제조되는 투과전자현미경용 시편. Specimens for transmission electron microscope prepared by the method of any one of claims 1 to 6.
  8. 샌드위치 시편을 제작하는 단계;Preparing a sandwich specimen;
    상기 샌드위치 시편을 웨지(wedge) 형태로 폴리싱하는 단계;Polishing the sandwich specimen in the form of a wedge;
    상기 폴리싱 된 시편에서 적어도 하나의 영역의 전면 및 배면을 집속 이온빔을 이용하여 미세 식각하는 단계; 및Fine etching the front and back surfaces of at least one region of the polished specimen using a focused ion beam; And
    상기 미세 식각된 시편을 클리닝하여, 투과전자현미경용 시편을 제작하는 단계를 포함하는 투과전자현미경 시편 제작방법.A method of manufacturing a transmission electron microscope specimen comprising cleaning the finely etched specimen to produce a specimen for transmission electron microscope.
  9. 제8항에 있어서,The method of claim 8,
    상기 샌드위치 시편은, 에폭시를 사용하여 증착된 면이 서로 마주보게 배치되도록 접착시켜 제작하는 것을 특징으로 하는 투과전자현미경 시편 제작방법. The sandwich specimen is a transmission electron microscope specimen manufacturing method characterized in that the adhesive is produced by bonding so that the surfaces deposited using epoxy to face each other.
  10. 제8항에 있어서,The method of claim 8,
    상기 미세 식각하는 단계에서, 상기 미세 식각하는 단계에서, 폭(x)은 5㎛ 내지 7㎛, 두께(y)는 1㎛ 내지 3㎛, 침투 깊이(z)는 1㎛ 내지 3㎛, 집속 이온빔의 전류 밀도는 20㎀ 내지 30㎀로 설정하는 것을 특징으로 하는 투과전자현미경 시편 제작방법.In the fine etching step, in the fine etching step, the width x is 5 μm to 7 μm, the thickness y is 1 μm to 3 μm, the penetration depth z is 1 μm to 3 μm, the focused ion beam The transmission electron microscope specimen manufacturing method, characterized in that the current density of 20 to 30 kHz.
  11. 제8항에 있어서,The method of claim 8,
    상기 폴리싱 과정은, 트라이포드 폴리셔를 이용하여 수행하는 것을 특징으로 하는 투과전자현미경 시편 제작방법.The polishing process is a transmission electron microscope specimen manufacturing method, characterized in that performed using a tripod polisher.
  12. 제8항에 있어서,The method of claim 8,
    상기 클리닝하는 과정은, 상기 미세 식각하는 과정보다 전압과 전류값을 낮게하여 세척하는 과정인 것을 특징으로 하는 투과전자현미경 시편 제작방법.The cleaning process is a transmission electron microscope specimen manufacturing method, characterized in that the process of cleaning by lowering the voltage and current value than the fine etching process.
  13. 제8항 내지 제12항 중 어느 한 항의 제작방법에 의해 제조되는 투과전자현미경용 시편. Specimen for a transmission electron microscope produced by the manufacturing method of any one of claims 8 to 12.
PCT/KR2013/009163 2013-08-14 2013-10-14 Method for producing transmission electron microscopy specimen using tripod polishing and focused ion beams WO2015023025A1 (en)

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