WO2013055429A3 - Quantum dot structures for efficient photovoltaic conversion, and methods of using and making the same - Google Patents

Quantum dot structures for efficient photovoltaic conversion, and methods of using and making the same Download PDF

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Publication number
WO2013055429A3
WO2013055429A3 PCT/US2012/048279 US2012048279W WO2013055429A3 WO 2013055429 A3 WO2013055429 A3 WO 2013055429A3 US 2012048279 W US2012048279 W US 2012048279W WO 2013055429 A3 WO2013055429 A3 WO 2013055429A3
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WO
WIPO (PCT)
Prior art keywords
making
methods
nanomaterials
same
quantum dot
Prior art date
Application number
PCT/US2012/048279
Other languages
French (fr)
Other versions
WO2013055429A2 (en
Inventor
Vladimir Mitin
Andrei Sergeyev
Nizami VAGIDOV
Kimberly SABLON
John W. LITTLE
Kitt REINHARDT
Original Assignee
The Research Foundation Of State University Of New York
U.S. Army Research Laboratory
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Research Foundation Of State University Of New York, U.S. Army Research Laboratory filed Critical The Research Foundation Of State University Of New York
Publication of WO2013055429A2 publication Critical patent/WO2013055429A2/en
Publication of WO2013055429A3 publication Critical patent/WO2013055429A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Abstract

Nanomaterials having a reduced wetting layer, methods of making the nanomaterials and uses of the nanomaterials. The nanomaterials with reduced wetting layer can be used in optoelectronic devices and photovoltaic devices. The nanomaterials comprise a capping layer that results in a reduced wetting layer. The devices having a reduced wetting layer exhibit longer photoelectron lifetime that increases the responsivity and sensitivity of detectors and the conversion efficiency of photovoltaic devices.
PCT/US2012/048279 2011-07-28 2012-07-26 Quantum dot structures for efficient photovoltaic conversion, and methods of using and making the same WO2013055429A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161512535P 2011-07-28 2011-07-28
US61/512,535 2011-07-28

Publications (2)

Publication Number Publication Date
WO2013055429A2 WO2013055429A2 (en) 2013-04-18
WO2013055429A3 true WO2013055429A3 (en) 2013-08-08

Family

ID=48082712

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/048279 WO2013055429A2 (en) 2011-07-28 2012-07-26 Quantum dot structures for efficient photovoltaic conversion, and methods of using and making the same

Country Status (1)

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WO (1) WO2013055429A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6259843B2 (en) * 2016-01-12 2018-01-10 シャープ株式会社 Photoelectric conversion device having quantum structure using indirect transition semiconductor material

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070151592A1 (en) * 2005-12-16 2007-07-05 Forrest Stephen R Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
WO2008030183A1 (en) * 2006-09-08 2008-03-13 Agency For Science, Technology And Research Tunable wavelength light emitting diode
US20090255580A1 (en) * 2008-03-24 2009-10-15 Neil Dasgupta Quantum dot solar cell with quantum dot bandgap gradients
US20100243053A1 (en) * 2007-06-26 2010-09-30 Seth Coe-Sullivan Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
US20110143475A1 (en) * 2008-06-06 2011-06-16 Universidad Politécnica de Madrid Method for manufacturing of optoelectronic devices based on thin-film, intermediate-band materials description

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070151592A1 (en) * 2005-12-16 2007-07-05 Forrest Stephen R Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
WO2008030183A1 (en) * 2006-09-08 2008-03-13 Agency For Science, Technology And Research Tunable wavelength light emitting diode
US20100243053A1 (en) * 2007-06-26 2010-09-30 Seth Coe-Sullivan Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
US20090255580A1 (en) * 2008-03-24 2009-10-15 Neil Dasgupta Quantum dot solar cell with quantum dot bandgap gradients
US20110143475A1 (en) * 2008-06-06 2011-06-16 Universidad Politécnica de Madrid Method for manufacturing of optoelectronic devices based on thin-film, intermediate-band materials description

Also Published As

Publication number Publication date
WO2013055429A2 (en) 2013-04-18

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