WO2013043268A3 - High voltage charge pump regulation system with decoupled large and fine step|adjustment - Google Patents

High voltage charge pump regulation system with decoupled large and fine step|adjustment Download PDF

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Publication number
WO2013043268A3
WO2013043268A3 PCT/US2012/050077 US2012050077W WO2013043268A3 WO 2013043268 A3 WO2013043268 A3 WO 2013043268A3 US 2012050077 W US2012050077 W US 2012050077W WO 2013043268 A3 WO2013043268 A3 WO 2013043268A3
Authority
WO
WIPO (PCT)
Prior art keywords
step size
resistors
bits
charge pump
high voltage
Prior art date
Application number
PCT/US2012/050077
Other languages
French (fr)
Other versions
WO2013043268A2 (en
Inventor
Qui Vi Nguyen
Trung Pham
Original Assignee
Sandisk Technologies Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Technologies Inc. filed Critical Sandisk Technologies Inc.
Publication of WO2013043268A2 publication Critical patent/WO2013043268A2/en
Publication of WO2013043268A3 publication Critical patent/WO2013043268A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0025—Arrangements for modifying reference values, feedback values or error values in the control loop of a converter

Abstract

A regulator system for a charge pump system divides the binary decoding into two branches. One controls a set of parallel connected resistors for fine output voltage steps. The other branch controls a serial resistor to provide the large step size. For example, a 9-bit digital input signal is split into 2 least significant for the fine adjustment and the other 7 bits for the larger adjustments. In the example of a 50mV step size, in one current path 2 bits of the binary input then control two parallel resistors for 50mV and 100mV step size, and in the other current path 7 bits are used for one-hot-decode control serial resistors to provide a 200mV step size. A unity gain operational amplifier and a high voltage device are added in between the two branches to decouple the parasitic capacitance of large parallel resistors from the other elements. Thus, the sensing node consequently has less parasitic capacitance and is more sensitive to output level movement, resulting in less ripple at the output node.
PCT/US2012/050077 2011-09-22 2012-08-09 High voltage charge pump regulation system with fine step adjustment WO2013043268A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/240,623 US8400212B1 (en) 2011-09-22 2011-09-22 High voltage charge pump regulation system with fine step adjustment
US13/240,623 2011-09-22

Publications (2)

Publication Number Publication Date
WO2013043268A2 WO2013043268A2 (en) 2013-03-28
WO2013043268A3 true WO2013043268A3 (en) 2013-11-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/050077 WO2013043268A2 (en) 2011-09-22 2012-08-09 High voltage charge pump regulation system with fine step adjustment

Country Status (2)

Country Link
US (1) US8400212B1 (en)
WO (1) WO2013043268A2 (en)

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JP5976077B2 (en) * 2014-11-14 2016-08-23 力晶科技股▲ふん▼有限公司 Internal power supply voltage generation circuit, semiconductor memory device, and semiconductor device
CN109473136B (en) * 2018-12-24 2023-08-29 北京时代全芯存储技术股份有限公司 Memory driving device
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