WO2012138345A1 - Concept de réseau plan-focal avancé pour applications à infrarouge (ir) à surdébit persistant - Google Patents

Concept de réseau plan-focal avancé pour applications à infrarouge (ir) à surdébit persistant Download PDF

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Publication number
WO2012138345A1
WO2012138345A1 PCT/US2011/031639 US2011031639W WO2012138345A1 WO 2012138345 A1 WO2012138345 A1 WO 2012138345A1 US 2011031639 W US2011031639 W US 2011031639W WO 2012138345 A1 WO2012138345 A1 WO 2012138345A1
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WO
WIPO (PCT)
Prior art keywords
photovoltaic detector
infrared radiation
focal plane
sensor chip
plane array
Prior art date
Application number
PCT/US2011/031639
Other languages
English (en)
Inventor
Richard MCKEE
Richard MADONNA
Perry FATH
James Halvis
Original Assignee
Northrop Grumman Systems Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northrop Grumman Systems Corporation filed Critical Northrop Grumman Systems Corporation
Priority to PCT/US2011/031639 priority Critical patent/WO2012138345A1/fr
Publication of WO2012138345A1 publication Critical patent/WO2012138345A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type

Definitions

  • the invention relates to the field of focal plane arrays of detectors, and more particularly to large-area dual-color focal plane arrays of infrared detectors
  • Focal plane arrays are detectors which consist of a linear or two- dimensional matrix of individual typically rectangular sensor chip assembly (SCA) detectors and are used at the focus of imaging systems.
  • Linear focal plane arrays consist of a single line of SCA detectors while area focal plane arrays consist of rows and columns of SCA detectors.
  • digital FPAs receive imaged radiation (usually in the visible or infrared spectral band) and transform that radiation into digital counts. These digital counts are proportional to the amount of radiation incident upon the pixels of the SCAs that constitute the FPA.
  • Focal plane arrays differ in terms of spectral range of detection and can typically detect X-ray, ultraviolet (UV), visible, near-infrared (NIR mid-infrared, far- infrared (FIR), and microwave radiations.
  • UV ultraviolet
  • NIR near-infrared
  • FIR far- infrared
  • microwave radiations microwave radiations.
  • FPAs are typically used in astronomical imaging, aerial reconnaissance, aerial mapping, spectrographic analysis, star tracking, machine vision, X-ray diffraction, and measurement applications.
  • FPAs are not large enough to support high field of view optics with reasonable f numbers, needed to survey the full earth region. This is because individual SCA detectors typically have controlling circuitry located at the periphery of their active region. This prevents SCAs from being tiled or butted against each other with minimal pixel gaps to form large area rectangular FPA patterns.
  • optical-mechanical step stare and scanning techniques can be used to view each point in the region. The time between successive returns of the FPA's field of view at a specific point in the region constitutes the revisit time.
  • an SCA detector that is four- side buttable in order to accommodate large-area rectangular FPAs with minimal pixel gaps between their constituent modular SCAs.
  • a four side buttable SCA would allow assembly of large-area modular FPAs with a field of view sufficiently large for the region to be surveilled, thereby eliminating the complexity and cost of the various scanning and revisit techniques.
  • full dual color simultaneity is done by having two detector layers vertically grown with differing spectral cutoffs.
  • the broadband infrared radiation is incident on the first detector layer having a wideband spectral cutoff.
  • This first layer then absorbs the higher energy infrared radiation, while passing the lower energy infrared radiation to the second detector layer.
  • This second layer then absorbs the second, lower energy infrared radiation.
  • the two detector layer vertical architecture requires vias between the layers to make electrical interconnects and these vias take away from detector area causing a decrease in sensitivity and modulation transfer function.
  • Additional drawbacks of the vertical architecture include relatively high spectral cross talk, less than 100% fill factor, operability reduced by the product of the two detector layers, low spectral flexibility as band-gap engineering of two filter cut-offs is required, and significant complexity should collection of more than two spectral bands is engineered.
  • the vertical architecture is used in tactical applications, which typically have more relaxed performance requirements than space-based infrared applications. For space based applications, it would be highly desirable to develop a large-area FPA capable of simultaneously collecting two infrared bands without the drawbacks and complexities of the vertical architecture.
  • Foveal vision i.e., the capability of higher resolution in certain regions of the FPA.
  • the data rates can exceed 1 Gbit s.
  • Existing communication channels have 10-100 times lower bandwidth than this.
  • Foveal vision allows management of data rates; high resolution is only applied where it is needed and the rest of the scene is viewed at a coarser resolution.
  • large-area FPA images can be transmitted using existing communication channels. This represents a major savings at the system level since communications infrastructure does not need to be upgraded to accommodate higher bandwidths.
  • Foveal vision is typically not present in prior art smaller area FPAs, because they have a reasonable number of detectors to fit into existing communications channels.
  • a factor that complicates the design of large-area FPA optical systems is that the image surface must be planar so that the image can be recorded using currently available planar FPAs.
  • the planar image surface constraint leads to off-axis aberrations that include astigmatism, field curvature and coma. These need to be corrected using additional optical elements, complicating the optical system design and resulting in higher cost. If the requirement that the image surface be planar can be relaxed, simpler, more compact and lower-cost optics can be used. As the field of view increases, it is increasingly harder to maintain a flat image plane. In large area FPA applications, single SCAs with different shim heights can be used to match the image plane curvature as best as possible. It is highly desirable for large-area FPAs like those used in space applications to accommodate curved image planes.
  • the sensor chip assembly has spatial foveal vision capability such that high resolution is only applied where it is needed and the rest of the scene is viewed at a coarser resolution.
  • the vertical stack integration enables four side butted modular assembly (tiling) of sensor chip assemblies with minimal gaps, which allows the formation of large-area focal plane arrays.
  • the micro-optics structure comprises a microlens at each pixel location for directing the infrared radiation to a first spectral filter, wherein a first spectral band of the infrared radiation passes through the first spectral filter into a first photovoltaic detector.
  • a second photovoltaic detector receives at least a portion of the infrared radiation not passing through the first spectral filter.
  • a second spectral band of the infrared radiation not passing through the first spectral filter passes through a second spectral filter into the second photovoltaic detector.
  • the first photovoltaic detector and the second photovoltaic detector collect spatially co- registered infrared radiation synchronously.
  • Multiple sensor chip assemblies are side butted with minimal gaps to form a modular focal plane array and are electronically synchronized for synchronous focal plane array image capture.
  • the first focal plane array photovoltaic detector image and the second focal plane array photovoltaic detector image are spatially co-registered and are collected synchronously.
  • the focal plane array is capable of spatial foveal vision that crosses sensor chip assembly boundaries.
  • the focal plane array may have a segmented curved focal image plane for utilization with curved image optical systems.
  • the focal plane array has a wide field of view focal image plane for large area coverage.
  • Figure 1 is a cross-sectional view of an SCA depicting an exemplary vertical stack of micro-optics, detector layer, silicon (Si) read out integrated circuit (ROIC) level 1, ROIC level 2, and mechanical mounting structure.
  • Si silicon
  • ROIC integrated circuit
  • FIG. 2 is an exemplary diagram of an 8 X 8 arrangement of sensor chip assemblies (SCA's) forming the focal plane array (FPA) of the present invention.
  • Figure 3 is another cross-sectional side view depicting one SCA.
  • Figure 4 is a cross-sectional diagram of micro-optic structure within each pixel for the present invention.
  • FIG. 1 shown is a cross-sectional view of an SCA 100 depicting an exemplary vertical stack of micro-optics 110, photovoltaic detector layer 120, silicon (Si) read out integrated circuit (ROIC) level 1 130, ROIC level 2 140, and mechanical mounting structure 150.
  • the micro-optics 110 can be attached to the detector layer 120 using known wafer bonding techniques.
  • the SCA 100 has a multiplicity of pixels for detecting incident infrared radiation.
  • the micro-optics 110 structure receives the incident infrared radiation and has dual color simultaneous and co-registered processing capability, i.e., two infrared spectral bands can be detected synchronously at the same pixel location.
  • the two infrared spectral bands and their photon flux are directed to two separate detectors in the photovoltaic detector layer 120.
  • Typical infrared photovoltaic detector layer 120 material systems include Mercury Cadmium Telluride (MCT) and Cadmium Zinc Telluride (CZT), although other detector or materials may be used as desired.
  • MCT Mercury Cadmium Telluride
  • CZT Cadmium Zinc Telluride
  • the photovoltaic detector layer 120 converts the infrared radiation into a signal.
  • An indium bump 160 electrical connection is then used to connect photovoltaic detector layer 120 to a silicon LI (Level 1) ROIC input cell 130. This is the conventional, state of the art approach for moving signal charge (current) from the photovoltaic detector layer 120 to the LI ROIC input cell 130.
  • a metal bus layer 170 situated below the LI ROIC input cell 130 interfaces bias, clock, address, and read out lines. This information is stored in capacitors located within the LI ROIC input cell 130.
  • a second L2 ROIC input cell 140 digitizes and outputs signals to off-chip electronics. L2 ROIC input cell 140 is situated below the metal bus layer 170 and is interfaced with the LI ROIC input cell 130 through wafer vias. Thus, two spectral infrared signals from each pixel location can be accessed.
  • a mechanical structure layer 150 situated below the L2 ROIC input cell 140 provides mechanical support.
  • Each SCA 100 can be composed of at least 1024 x 1024 infrared pixels 410.
  • Each pixel 410 of the SCA (figure 4) collects infrared radiation from two distinct infrared spectral bands and outputs digitally, proportionally to the amount of incident infrared radiation upon it.
  • Foveal vision capability enables frame rate selectable regions of high and low resolution within the SCA 100 field of view. This enables precise resolution where required while not suffering the large bandwidth penalty of unneeded, high resolution across the entire SCA 100.
  • the fovea control resides at the L2 ROIC input cell 140. Separate connections to small memory cell switches located within each pixel 410 allow flexible summations of nearest neighbor signal charge, which controls the overall SCA 100 resolution. Resolution is controlled by connecting or not connecting adjacent pixel 410 signals.
  • the vertical stack integration of the SCA 100 controlling electronic circuitry enables four side butted modular assembly of SCAs 100 with minimal gaps, i.e., a multiplicity of SCAs 100 can be tiled on all four sides to form a large-area FPA 200 with a precise rectangular pattern and minimal gaps between the constituent SCAs 100.
  • the large area FPA 200 has a wide field of view focal image plane for large area coverage. This is an improvement over prior art SCAs that typically have controlling electronic circuitry located at the periphery of their active regions, thereby complicating modular assembly of large-area SCAs with minimal gaps.
  • the SCAs 100 are electronically synchronized to each other for synchronous focal plane array image capture.
  • Figure 2 shows an exemplary 8 8 arrangement of closely four side butted SCA's 100 forming FPA 200.
  • the number of SCA's 100 utilized to form FPA 200 is dependent upon the application.
  • an arrangement of a large number of closely four- side butted SCA's 100 is needed.
  • each square 210 represents an SCA 100.
  • Incorporated within the FPA 200 is foveal vision capability, i.e., frame rate selectable regions of high and low resolution. Foveal capability regions can cross SCA 100 boundaries within the FPA 200 thus giving great flexibility to the user. This enables precise resolution where required while not suffering the large bandwidth penalty of unneeded, high resolution across the entire FPA 200.
  • the size and shape of the high and low resolution regions can be controlled through outside input commands and can be updated at the frame rate of the FPA 200.
  • the electronics controlling the FPA 200 would orchestrate which regions of the FPA 200, and consequently parts of different SCA's 100, would be regions of high resolution and which regions would be regions of low resolution. Ultimately, the size of the high resolution regions is limited by the overall sensor downlink data rate and bandwidth compression schemes employed.
  • FPA 200 foveal capability reduces bandwidth requirements, thus simplifying system data recording, compression, and transmission for typical space- based and large field of view area applications.
  • the output data rate sent to the ground is hardware limited.
  • High data-rate high-resolution regions need to be managed at the FPA level to ensure that the maximum amount of relevant information utilizes the existing space vehicle downlink bandwidth.
  • a modular FPA 200 consisting of four-side butted SCAs 100 with minimal pixel gaps could be employed for the image plane of space systems utilizing optics which form curved images. As the field of view increases, it is increasingly harder to maintain a flat image plane and the image plane becomes curved. By accommodating curved image planes, the modular FPA 200 simplifies optical system design and offers an advantage over prior art monolithic FPAs that are inherently flat and can't be used in curved image plane applications.
  • the focal plane chassis 300 is a structure that precisely locates the focal plane plate 310 and the backplane 320. Functionally, the focal plane chassis 300 provides the mechanical support of the focal plane plate 310 and the thermal path to cool the focal plane plate 310.
  • the photovoltaic detector layer 120, readout and analog to digital converter are denoted by sensor assembly 330.
  • the dotted lines 340 show a clearance hole for the connection cable 350 that comes from the sensor assembly 330 to the backplane 320.
  • the connection ends of the cable 350 are shown by elements 380 and 390.
  • a precision machined base 360 provides mechanical support for the sensor assembly 330.
  • the dotted outline of the bolt 370 mechanically joining the sensor assembly base 360 to the focal plane plate 310 is also shown in figure 3.
  • FIG. 400 shown is an exemplary cross-sectional diagram 400 of the SCA's 100 micro-optic structure 110 within each pixel 410 for the present invention.
  • the micro-optics structure 110 is utilized to obtain two color, spatially co- registered, simultaneous infrared signal collection.
  • a micro-lens 415 is used to direct incoming infrared spectral radiation 450 to the refractive interface 420 and then to the infrared spectral filter 425 located just above a first infrared photovoltaic detector 430 within each pixel 410.
  • the micro-lens 415 can be comprised of low refractive index material.
  • the infrared spectral filter 425 can be a low-pass, high-pass, or band-pass filter.
  • the infrared spectral filter 425 passes a desired infrared spectral band into the first infrared photovoltaic detector 430, and redirects the remaining infrared radiation via reflection through mirror 435 to a second infrared photovoltaic detector 440.
  • a second infrared spectral filter is located just above the second infrared photovoltaic detector 440.
  • the second infrared photovoltaic detector 440 receives at least a portion of the infrared radiation not passing through the infrared spectral filter 425.
  • a portion of the incoming infrared spectral radiation 450 incident upon pixel 410 is collected by the first infrared photovoltaic detector 430.
  • the second infrared photovoltaic detector 440 receives all of the infrared radiation not passing through the first infrared spectral filter 425 in the case where there is no second infrared spectral filter located above it.
  • a second infrared spectral filter is located just above the second infrared photovoltaic detector 440, a spectral band of the infrared spectral radiation 450 not passing through the infrared spectral filter 425 passes through the second infrared spectral filter into the second infrared photovoltaic detector 440.
  • the first infrared photovoltaic detector 430 and the second infrared photovoltaic detector 440 receive spatially co-registered infrared radiation as it originates from a single micro-lens 415 location. Also, the first infrared photovoltaic detector 430 and the second infrared photovoltaic detector 440 receive infrared radiation synchronously due to their proximity and the small light path separating them via reflection through mirror 435.
  • SCA 100 composed of a plurality of infrared pixels 410 is capable of spatially co-registered and synchronous dual-color infrared radiation detection.
  • FPA 200 composed of a plurality of electronically synchronized SCAs 100 is also capable of spatially co-registered and synchronous dual color infrared radiation detection.
  • FPA 200 would be placed behind infrared optics, all embedded within a space qualified sensor as part of a space payload. This payload might occupy a geosynchronous orbit and view the earth in it's entirety using FPA 200 as the image plane.
  • FPA 200 Through sensor line of sight knowledge relative to the earth and ground based mapping of each of the ⁇ 16 million pixels relative to the center line of sight of the sensor, it would be known where on the earth each of the FPA's 200 pixels are imaging. Consequently, when events in certain regions of the earth are of interest, these regions could be imaged in the high resolution foveal format, while regions of less interest would be imaged in low resolution. If needed, the foveal region could be changed at the frame rate of the FPA 200.

Abstract

L'invention concerne un ensemble puce de capteur intégré à empilement vertical (100) ayant une multiplicité de pixels (410) servant à détecter un rayonnement infrarouge (450), lequel ensemble (100) comprend une structure micro-optique (110) servant à traiter le rayonnement infrarouge (450), une couche de détecteur photovoltaïque (120) servant à convertir le rayonnement infrarouge en un signal, et deux couches de cellule d'entrée de circuit intégré de lecture. L'ensemble puce de capteur (100) a une vision fovéale spatiale, et une capacité de double couleurs synchrones et spatialement coalignées. L'intégration de l'ensemble puce de capteur à empilement vertical (100) permet l'assemblage modulaire abouté sur quatre côtés d'ensembles puce de capteur (100) avec des intervalles minimaux, pour la formation de réseaux plan-focal de grande surface (200) avec des capacités de doubles couleurs synchrones et spatialement coalignées, de vision fovéale et de détection d'image focale courbe.
PCT/US2011/031639 2011-04-07 2011-04-07 Concept de réseau plan-focal avancé pour applications à infrarouge (ir) à surdébit persistant WO2012138345A1 (fr)

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PCT/US2011/031639 WO2012138345A1 (fr) 2011-04-07 2011-04-07 Concept de réseau plan-focal avancé pour applications à infrarouge (ir) à surdébit persistant

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9386220B2 (en) 2013-12-06 2016-07-05 Raytheon Company Electro-optical (EO)/infrared (IR) staring focal planes with high rate region of interest processing and event driven forensic look-back capability
US9588240B1 (en) 2015-10-27 2017-03-07 General Electric Company Digital readout architecture for four side buttable digital X-ray detector
EP3163259A1 (fr) * 2015-10-28 2017-05-03 Nokia Technologies Oy Appareil et procédé de formation d'un réseau de capteurs utilisant l'appareil
US10283557B2 (en) 2015-12-31 2019-05-07 General Electric Company Radiation detector assembly
US10686003B2 (en) 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
CN113655535A (zh) * 2021-07-05 2021-11-16 中国电子科技集团公司第十一研究所 引出组件及红外探测器

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US5568574A (en) * 1995-06-12 1996-10-22 University Of Southern California Modulator-based photonic chip-to-chip interconnections for dense three-dimensional multichip module integration
US6875975B2 (en) * 1999-12-24 2005-04-05 Bae Systems Information And Electronic Systems Integration Inc Multi-color, multi-focal plane optical detector
WO2005079199A2 (fr) * 2003-10-13 2005-09-01 Noble Device Technologies Capteur d'images comportant des photodetecteurs en germanium integres a un substrat de silicium et des circuits en silicium
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9386220B2 (en) 2013-12-06 2016-07-05 Raytheon Company Electro-optical (EO)/infrared (IR) staring focal planes with high rate region of interest processing and event driven forensic look-back capability
US9588240B1 (en) 2015-10-27 2017-03-07 General Electric Company Digital readout architecture for four side buttable digital X-ray detector
EP3163259A1 (fr) * 2015-10-28 2017-05-03 Nokia Technologies Oy Appareil et procédé de formation d'un réseau de capteurs utilisant l'appareil
WO2017072407A1 (fr) * 2015-10-28 2017-05-04 Nokia Technologies Oy Appareil et procédé de formation d'un réseau de capteurs utilisant l'appareil
EP3611479A1 (fr) * 2015-10-28 2020-02-19 Nokia Technologies Oy Réseau comprenant une pluralité d'appareils et procédé de formation d'un tel réseau
US10794739B2 (en) 2015-10-28 2020-10-06 Nokia Technologies Oy Apparatus and method of forming a sensor array using the apparatus
US10283557B2 (en) 2015-12-31 2019-05-07 General Electric Company Radiation detector assembly
US10686003B2 (en) 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
CN113655535A (zh) * 2021-07-05 2021-11-16 中国电子科技集团公司第十一研究所 引出组件及红外探测器

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