WO2012023119A1 - Lamination process for leds - Google Patents

Lamination process for leds Download PDF

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Publication number
WO2012023119A1
WO2012023119A1 PCT/IB2011/053661 IB2011053661W WO2012023119A1 WO 2012023119 A1 WO2012023119 A1 WO 2012023119A1 IB 2011053661 W IB2011053661 W IB 2011053661W WO 2012023119 A1 WO2012023119 A1 WO 2012023119A1
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WO
WIPO (PCT)
Prior art keywords
lamination layer
layer
phosphor
support film
led die
Prior art date
Application number
PCT/IB2011/053661
Other languages
French (fr)
Inventor
Grigoriy Basin
Kazutoshi Iwata
Original Assignee
Koninklijke Philips Electronics N.V.
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Filing date
Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Publication of WO2012023119A1 publication Critical patent/WO2012023119A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C70/00—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts
    • B29C70/68—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts by incorporating or moulding on preformed parts, e.g. inserts or layers, e.g. foam blocks
    • B29C70/70—Completely encapsulating inserts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C2791/00—Shaping characteristics in general
    • B29C2791/004—Shaping under special conditions
    • B29C2791/006—Using vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C51/00—Shaping by thermoforming, i.e. shaping sheets or sheet like preforms after heating, e.g. shaping sheets in matched moulds or by deep-drawing; Apparatus therefor
    • B29C51/10—Forming by pressure difference, e.g. vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2083/00—Use of polymers having silicon, with or without sulfur, nitrogen, oxygen, or carbon only, in the main chain, as moulding material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/747—Lightning equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Definitions

  • This invention relates to light emitting diodes (LEDs) and, in particular, to a technique of laminating a layer over LEDs on a submount substrate, such as laminating a phosphor layer over the LEDs.
  • LEDs light emitting diodes
  • FIG. 1 illustrates a conventional flip chip LED die 10 mounted on a portion of a submount wafer 12. In a flip-chip, both the n and p contacts are formed on the same side of the LED die.
  • the LED die 10 is formed of semiconductor epitaxial layers, including an n-layer 14, an active layer 15, and a p-layer 16, grown on a growth substrate, such as a sapphire substrate.
  • the growth substrate has been removed in Fig. 1 by laser lift-off, etching, grinding, or by other techniques.
  • the epitaxial layers are GaN based, and the active layer 15 emits blue light.
  • a metal electrode 18 electrically contacts the p-layer 16, and a metal electrode 20 electrically contacts the n-layer 14.
  • the electrodes 18 and 20 are gold pads that are ultrasonically welded to anode and cathode metal pads 22 and 24 on a ceramic submount wafer 12.
  • the submount wafer 12 can be any suitable material, including silicon.
  • the submount wafer 12 has conductive vias 24 leading to bottom metal pads 26 and 28 for bonding to a printed circuit board. Many LEDs are mounted on the submount wafer 12, such as 2000, and the submount wafer 12 will be later singulated to form individual
  • Fig. 2 is a simplified top down view of LED dies 10 mounted on the submount wafer 12
  • Fig. 3 is a simplified cross-sectional view of a portion the wafer 12 of Fig. 2.
  • an underfill material such as silicone, may be dispensed beneath each LED die 10 to fill the gap between the LED die 10 and the underlying surface of the submount wafer 12.
  • a YAG phosphor, or red and green phosphors To produce white light using the blue LED die 10, it is well known to deposit a YAG phosphor, or red and green phosphors, directly over the die 10 by, for example, spraying or spin-coating the phosphor in a binder, electrophoresis, applying the phosphor in a reflective cup, or other means. It is also known to affix a preformed tile of phosphor (e.g., a sintered phosphor powder or phosphor powder in a binder) on the top of the LED die 10.
  • a preformed tile of phosphor e.g., a sintered phosphor powder or phosphor powder in a binder
  • US Patent No. 7,344,952 assigned to the present assignee, describes a single-step lamination process for laminating a sheet of phosphor in a silicone binder over LED dies mounted on a submount wafer.
  • An object of the invention is to propose a process for mass production of phosphor- converted LEDs.
  • Another object of the invention is to propose a way to efficiently laminate a lamination film over LED dies. Therefore, an embodiment of an LED device fabrication method is proposed as follows. First, the method includes a first step of providing at least one LED die on a substrate. Then a preformed lamination layer is mounted over the LED die.
  • the lamination layer comprises a binder, or other material, with a first and second surface and is supported by a support film on the first surface.
  • the binder may contain phosphor particles.
  • the support film remains on the first surface while the lamination layer is mounted over the LED die. Thereafter, the lamination layer is heated to a first temperature to soften the lamination layer, and the heating permits the creation of an airtight seal between the lamination layer and the substrate surrounding the at least one LED die.
  • the lamination layer is heated to a second temperature in a vacuum to remove air between the lamination layer and the substrate.
  • the structure may then be exposed to ambient air pressure, which presses the lamination layer against the surface to thus conform the lamination layer over the LED die.
  • the air tight seal prevents the air from entering under the lamination layer.
  • the LEDs may be flip-chips, or have top and bottom electrodes, or have top electrodes only.
  • Fig. 1 is a cross-sectional view of a prior art blue or UV LED die, mounted on a submount substrate or a portion of a submount wafer.
  • Fig. 2 is a simplified top down view of LED dies mounted on a submount wafer.
  • Fig. 3 is a simplified cross-sectional view of a portion the wafer of Fig. 2.
  • Fig. 4 illustrates a phosphor/silicone layer sandwiched between a support film and a protective film.
  • the sheet may be dispensed from a roll and be, for example, 30 cm wide by 150 meters long.
  • Fig. 5 illustrates the protective film being progressively removed as the sheet is unrolled just prior to being laminated over LED dies on a submount wafer.
  • Fig. 6 illustrates the phosphor/silicone layer on the support film after the protective film has been removed and after the phosphor/silicone layer has been cut to substantially match the size of the submount wafer.
  • Fig. 7 illustrates the phosphor/silicone layer softened by heating and undergoing a first lamination process over the LED dies.
  • Fig. 9 illustrates a second lamination process where the phosphor/silicone layer conforms to the LED dies and encapsulates them.
  • Fig. 10 is a cross-sectional view of a single LED and submount substrate after silicone lenses are molded over the LEDs while on the submount wafer and after dicing the submount wafer.
  • step 20 of Fig. 1 an LED wafer is fabricated using any suitable techniques, which may be prior art as described with respect to Fig. 1.
  • step 22 the LED wafer is then diced (e.g., by sawing), and the LED dies are mounted on a submount wafer, such as the submount wafer 12 described with respect to Figs. 1-3. In one example, there may be about 2000 LED dies mounted on the submount wafer 12. An underfill may be dispensed below each LED die. An optional encapsulant step may be performed to form a layer of silicone over the LED dies for protection and to increase light extraction.
  • a roll of a support film 26 is provided.
  • the support film 26 may be a commercially available ethyl tetra fluoro ethylene (ETFE) foil (a polymer) about 50 microns thick, 30 cm wide, and 150 meters long. Other dimensions are also suitable, such as providing the support film 26 as small sheets or a ribbon.
  • ETFE ethyl tetra fluoro ethylene
  • a phosphor powder is mixed with silicone, or other suitable binder, to form a slurry, and the slurry is sprayed on or otherwise deposited on the support film 26 to a predetermined thickness in a continuous process (assuming a roll is continuously dispensed).
  • a YAG phosphor yellow-green
  • the phosphor is mixed red and green phosphors. Any combination of phosphors may be used in conjunction with the LED light to make any color light. The density of phosphor, the thickness of the layer, and the type of phosphor or combination of phosphors are selected so that the light emitted by the combination of the LED die and the phosphor(s) has a target white point or other desired color.
  • the phosphor/silicone layer will be about 30-200 microns thick.
  • Other inert inorganic particles such as light scattering materials (e.g., silica, Ti0 2 ) may also be included in the slurry, or only non-phosphor materials are included in the slurry.
  • only clear silicone is used, and various rolls of silicone layers are fabricated using silicone of different indices of refraction.
  • slurry is then dried, such as by infrared lights or other heat sources, as the support film 26 is being unrolled.
  • the resulting dried phosphor/silicone layer 28 is shown in Fig. 4.
  • a protective film 32 of ETFE foil is placed over the dried
  • the protective film 32 is initially provided as a roll and may have a thickness of about 25 microns and the same other dimensions as the support film 26.
  • the protective film 32 would not be needed if the support film 26 were formed as small sheets and the top surface of the phosphor/silicone layer 28 would not be subjected to potentially damaging contacts. Additionally, the protective film would not be needed of the phosphor/silicone layer 28 would not be damaged without the protective film.
  • the sandwiched structure of Fig. 4 is rolled up for later use in laminating LED dies on a submount wafer.
  • the protective film 32 prevents the phosphor/silicone layer 28 from being contacted during the rolling up of the structure. Neither the support film 26 nor the protective film 32 is strongly affixed to the phosphor/silicone layer 28.
  • the phosphor/silicone layer 28 may be tested for its color conversion and matched to particular LED dies generating a certain range of peak wavelengths. Different rolls or sheets of the phosphor/silicone layer 28 having different characteristics may be fabricated for laminating LED dies having different characteristics.
  • step 34 it is assumed that the roll of the phosphor/silicone layer 28 has been chosen to be laminated onto LED dies, so the roll is mounted on a lamination system that dispenses the roll at a certain rate.
  • step 36 As the sandwiched phosphor/silicone layer 28 is rolled out, the protective film 32 is continuously removed since it is no longer needed.
  • the phosphor/silicone layer 28 and support film 26 is then cut into pieces (if needed) about the same size as the submount wafer 12, such as 4x4 inches or other size.
  • Fig. 6 illustrates a portion of a cut piece of the phosphor/silicone layer 28 and support film 26.
  • step 40 the phosphor/silicone layer 28 is mounted face down over the submount wafer 12. Fiducials on the wafer 12 may be used for alignment of the cut piece.
  • step 42 as shown in Fig. 7, a first lamination step is performed.
  • phosphor/silicone layer 28 is heated in a chamber to 40-120°C to soften it and to cause the phosphor/silicone layer 28 to adhere to the top surfaces of the LED dies 10.
  • a vacuum is created in the chamber, and downward mechanical pressure is applied to the surface of the support film 26, such as by a resilient pad, a diaphragm, or compressed air.
  • the uniform pressure causes the phosphor/silicone layer 28 to form an airtight seal around the periphery of the submount wafer 12 and helps the phosphor/silicone layer 28 to uniformly adhere to the top surfaces of the LED dies 10.
  • the support film 26 helps protect the phosphor/silicone layer 28 during application of the mechanical pressure and prevents deformation of the phosphor/silicone layer 28 over the LED dies 10 during this first lamination step.
  • step 44 the structure is removed from the chamber, cooled to room temperature, and the support film 26 is removed, such as by using adhesive tape.
  • Fig. 8 shows the resulting structure. The airtight seal around the periphery of the submount wafer 12 prevents air from filling in between the phosphor/silicone layer 28 and the submount wafer 12. If the support film 26 can be removed while the structure remains in the chamber, the process can be performed in-situ.
  • a second lamination process is performed.
  • the structure is placed in a vacuum chamber and heated to an elevated temperature of about 70-130°C, and a vacuum is created to remove the remaining air between the phosphor/silicone layer 28 and the submount wafer 12. Since the support film 26 has been removed, the air can escape through small pores in the thin phosphor/silicone layer 28.
  • the temperature during the second lamination process is higher than the temperature used during the first lamination process to cause the phosphor/silicone layer 28 to be more pliable/conformable.
  • the extent of the vacuum and the process times depend on the specific materials used. Generally, a thinner phosphor/silicone layer 28 requires less time to remove the remaining air than a thicker phosphor/silicone layer 28.
  • step 48 air is then allowed to enter the chamber to pressurize the chamber, which compresses the heated/softened phosphor/silicone layer 28 against the LED dies 10 and submount wafer 12 to conform the phosphor/silicone layer 28 around the LED dies 10 and encapsulate them.
  • the peripheral seal prevents this air from entering between the phosphor/silicone layer 28 and the submount wafer 12.
  • step 50 as shown in Fig. 10, an optional silicone lens 60 is molded over each LED die 10 using compression molding.
  • the submount wafer 12 is then diced, such as by sawing, to separate out the mounted phosphor-converted LED dies, one of which is shown in Fig. 10.
  • the double lamination process allows the support film 26 to remain on the phosphor/silicone layer 28 until the phosphor/silicone layer 28 is fully supported by the LED dies 10 and submount wafer 12 and the peripheral seal is created. Then, in the second lamination step, without the support film 26, the conformal encapsulation occurs. Many variations of the above-described mass production process are possible.
  • Variations include the temperatures needed to process the phosphor/silicone layer 28, the various sizes, the order of the steps such as cutting the pieces (if needed) before or after the protective film 32 is removed, types of LED dies and submount wafers used, additives to the silicone encapsulating layer, among others.
  • the LED dies can be other than flip-chips and may be formed of any suitable material.
  • the silicone (or other binder material) encapsulation layer is infused with light scattering particles such as silica or Ti0 2 , or the clear silicone may have no additives but has a selected index of refraction for maximizing light extraction from the LED dies 10.
  • Multiple layers may be sequentially laminated over each other by repeating the above-described technique for each layer, such as for white point tuning, scattering plus phosphor conversion, or other purpose.
  • the phosphor/silicone layer 28 need not be laminated directly over the LED dies 10 but may be laminated over an encapsulant layer or lens, such as silicone, or other layer that has already been formed over the LED dies 10. By distancing the layer 28 from the LED die, some advantages result, such as less die absorption from backscattered light and improved color uniformity.
  • the phosphor/silicone layer 28 may be laminated over the lens 60 in Fig. 10, where the lens 60 is first formed over the LED dies 10 using a
  • the lamination process may be applied to any size submount wafer or any other type of substrate, even a substrate including only one LED die.
  • the substrate need not have metal electrodes or other interconnection functions.

Abstract

A method is described for laminating a layer (28) over an array of LED dies (10) on a submount wafer (12). The layer (28) may comprise phosphor powder in a silicone binder. The layer is formed on a support film (26) then dried. The layer is then mounted over the LED dies (10), and the structure is heated in a vacuum. Downward pressure is placed on the support film (26) so that the layer adheres to the tops of the LED dies and forms an airtight seal around the periphery of the wafer. The structure is then exposed to ambient air, and the support film (26) is removed. The seal prevents ambient air from entering between the layer (28) and the wafer (12). In a second lamination step, the structure is heated to a higher temperature in a vacuum to remove the remaining air between the layer and the wafer. The structure is then exposed to ambient air pressure, which conforms the heated layer to the LED dies.

Description

LAMINATION PROCESS FOR LEDS
FIELD OF THE INVENTION
This invention relates to light emitting diodes (LEDs) and, in particular, to a technique of laminating a layer over LEDs on a submount substrate, such as laminating a phosphor layer over the LEDs.
BACKGROUND Prior art Fig. 1 illustrates a conventional flip chip LED die 10 mounted on a portion of a submount wafer 12. In a flip-chip, both the n and p contacts are formed on the same side of the LED die.
The LED die 10 is formed of semiconductor epitaxial layers, including an n-layer 14, an active layer 15, and a p-layer 16, grown on a growth substrate, such as a sapphire substrate. The growth substrate has been removed in Fig. 1 by laser lift-off, etching, grinding, or by other techniques. In one example, the epitaxial layers are GaN based, and the active layer 15 emits blue light.
A metal electrode 18 electrically contacts the p-layer 16, and a metal electrode 20 electrically contacts the n-layer 14. In one example, the electrodes 18 and 20 are gold pads that are ultrasonically welded to anode and cathode metal pads 22 and 24 on a ceramic submount wafer 12. The submount wafer 12 can be any suitable material, including silicon. The submount wafer 12 has conductive vias 24 leading to bottom metal pads 26 and 28 for bonding to a printed circuit board. Many LEDs are mounted on the submount wafer 12, such as 2000, and the submount wafer 12 will be later singulated to form individual
LEDs/submounts.
Fig. 2 is a simplified top down view of LED dies 10 mounted on the submount wafer 12, and Fig. 3 is a simplified cross-sectional view of a portion the wafer 12 of Fig. 2. After the LED dies 10 are mounted on the submount wafer 12, an underfill material, such as silicone, may be dispensed beneath each LED die 10 to fill the gap between the LED die 10 and the underlying surface of the submount wafer 12.
Further details of LEDs can be found in the assignee's U.S. Patent Nos. 6,649,440 and 6,274,399, and U.S. Patent Publications US 2006/0281203 Al and 2005/0269582 Al , all incorporated herein by reference.
While an array of LED dies 10 are mounted on the submount wafer 12 or after the wafer 12 is diced, it is well known to deposit a phosphor over each LED die to generate any desired light color. To produce white light using the blue LED die 10, it is well known to deposit a YAG phosphor, or red and green phosphors, directly over the die 10 by, for example, spraying or spin-coating the phosphor in a binder, electrophoresis, applying the phosphor in a reflective cup, or other means. It is also known to affix a preformed tile of phosphor (e.g., a sintered phosphor powder or phosphor powder in a binder) on the top of the LED die 10. Blue light leaking through the phosphor, combined with the phosphor light, produces white light. Problems with creating the phosphor layer over the LED die 10 include the difficulty in creating very uniform phosphor layer thicknesses and densities. Any variation in the thickness or density will result in color non-uniformity over the surface of the LED die. A preformed tile of phosphor may be made more uniform and allows color testing of the tile prior to affixing it to the LED die; however, it is difficult and time-consuming to precisely affix each tile (e.g., 1 mm2) to the top surface of an LED die 10.
US Patent No. 7,344,952, assigned to the present assignee, describes a single-step lamination process for laminating a sheet of phosphor in a silicone binder over LED dies mounted on a submount wafer.
SUMMARY An object of the invention is to propose a process for mass production of phosphor- converted LEDs.
Another object of the invention is to propose a way to efficiently laminate a lamination film over LED dies. Therefore, an embodiment of an LED device fabrication method is proposed as follows. First, the method includes a first step of providing at least one LED die on a substrate. Then a preformed lamination layer is mounted over the LED die. The lamination layer comprises a binder, or other material, with a first and second surface and is supported by a support film on the first surface. The binder may contain phosphor particles. The support film remains on the first surface while the lamination layer is mounted over the LED die. Thereafter, the lamination layer is heated to a first temperature to soften the lamination layer, and the heating permits the creation of an airtight seal between the lamination layer and the substrate surrounding the at least one LED die. After the support film is removed, the lamination layer is heated to a second temperature in a vacuum to remove air between the lamination layer and the substrate. In an embodiment of the invention, the structure may then be exposed to ambient air pressure, which presses the lamination layer against the surface to thus conform the lamination layer over the LED die. The air tight seal prevents the air from entering under the lamination layer. An array of such high quality laminated LEDs can be simultaneously manufactured on a wafer scale, then the wafer is singulated. By consequence, the proposed method is well suited for mass production of high brightness uniform LEDs and overcomes the main drawbacks of the existing prior art. The method permits the formation of a uniform phosphor-embedded lamination layer over LEDS dies. The process may be used to laminate any thin delicate layer over LED dies.
Many variations to the above-described example are envisioned. The LEDs may be flip-chips, or have top and bottom electrodes, or have top electrodes only.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is a cross-sectional view of a prior art blue or UV LED die, mounted on a submount substrate or a portion of a submount wafer.
Fig. 2 is a simplified top down view of LED dies mounted on a submount wafer.
Fig. 3 is a simplified cross-sectional view of a portion the wafer of Fig. 2. Fig. 4 illustrates a phosphor/silicone layer sandwiched between a support film and a protective film. The sheet may be dispensed from a roll and be, for example, 30 cm wide by 150 meters long.
Fig. 5 illustrates the protective film being progressively removed as the sheet is unrolled just prior to being laminated over LED dies on a submount wafer.
Fig. 6 illustrates the phosphor/silicone layer on the support film after the protective film has been removed and after the phosphor/silicone layer has been cut to substantially match the size of the submount wafer.
Fig. 7 illustrates the phosphor/silicone layer softened by heating and undergoing a first lamination process over the LED dies.
Fig. 8 illustrates the support film being removed, since the phosphor/silicone layer is now supported by the LED dies and submount wafer.
Fig. 9 illustrates a second lamination process where the phosphor/silicone layer conforms to the LED dies and encapsulates them. . Fig. 10 is a cross-sectional view of a single LED and submount substrate after silicone lenses are molded over the LEDs while on the submount wafer and after dicing the submount wafer.
Fig. 11 is a flowchart showing various steps used in one embodiment of the invention.
Elements that are the same or equivalent are labeled with the same numeral. DETAILED DESCRIPTION
In the example of the lamination process used to describe the invention, the prior art LED dies 10 and submount wafer 12 of Figs. 1-3 are used, but the invention applies to any type of LED die and submount wafer. Further, the process described is a mass production process using certain equipment, but aspects of the process may be easily adapted for fabricating relatively small numbers of phosphor-converted LEDs using different equipment. In one embodiment, the LED dies 10 emit blue or UV light and are formed by epitaxial GaN layers.
One embodiment of the inventive process will be described with reference to the flowchart of Fig. 1 1 in conjunction with the progressive structures of Figs. 4-10.
In step 20 of Fig. 1 1, an LED wafer is fabricated using any suitable techniques, which may be prior art as described with respect to Fig. 1.
In step 22, the LED wafer is then diced (e.g., by sawing), and the LED dies are mounted on a submount wafer, such as the submount wafer 12 described with respect to Figs. 1-3. In one example, there may be about 2000 LED dies mounted on the submount wafer 12. An underfill may be dispensed below each LED die. An optional encapsulant step may be performed to form a layer of silicone over the LED dies for protection and to increase light extraction.
In step 24, referring to Fig. 4, a roll of a support film 26 is provided. The support film 26 may be a commercially available ethyl tetra fluoro ethylene (ETFE) foil (a polymer) about 50 microns thick, 30 cm wide, and 150 meters long. Other dimensions are also suitable, such as providing the support film 26 as small sheets or a ribbon.
A phosphor powder is mixed with silicone, or other suitable binder, to form a slurry, and the slurry is sprayed on or otherwise deposited on the support film 26 to a predetermined thickness in a continuous process (assuming a roll is continuously dispensed). In one embodiment, a YAG phosphor (yellow-green) is used. In another embodiment, the phosphor is mixed red and green phosphors. Any combination of phosphors may be used in conjunction with the LED light to make any color light. The density of phosphor, the thickness of the layer, and the type of phosphor or combination of phosphors are selected so that the light emitted by the combination of the LED die and the phosphor(s) has a target white point or other desired color. In one embodiment, the phosphor/silicone layer will be about 30-200 microns thick. Other inert inorganic particles, such as light scattering materials (e.g., silica, Ti02) may also be included in the slurry, or only non-phosphor materials are included in the slurry. In another embodiment, only clear silicone is used, and various rolls of silicone layers are fabricated using silicone of different indices of refraction.
The slurry is then dried, such as by infrared lights or other heat sources, as the support film 26 is being unrolled. The resulting dried phosphor/silicone layer 28 is shown in Fig. 4. In step 30, a protective film 32 of ETFE foil is placed over the dried
phosphor/silicone layer 28 in a continuous process. The protective film 32 is initially provided as a roll and may have a thickness of about 25 microns and the same other dimensions as the support film 26. The protective film 32 would not be needed if the support film 26 were formed as small sheets and the top surface of the phosphor/silicone layer 28 would not be subjected to potentially damaging contacts. Additionally, the protective film would not be needed of the phosphor/silicone layer 28 would not be damaged without the protective film.
The sandwiched structure of Fig. 4 is rolled up for later use in laminating LED dies on a submount wafer. The protective film 32 prevents the phosphor/silicone layer 28 from being contacted during the rolling up of the structure. Neither the support film 26 nor the protective film 32 is strongly affixed to the phosphor/silicone layer 28.
The phosphor/silicone layer 28 may be tested for its color conversion and matched to particular LED dies generating a certain range of peak wavelengths. Different rolls or sheets of the phosphor/silicone layer 28 having different characteristics may be fabricated for laminating LED dies having different characteristics.
In step 34, it is assumed that the roll of the phosphor/silicone layer 28 has been chosen to be laminated onto LED dies, so the roll is mounted on a lamination system that dispenses the roll at a certain rate.
In step 36, and as shown in Fig. 5, as the sandwiched phosphor/silicone layer 28 is rolled out, the protective film 32 is continuously removed since it is no longer needed. The phosphor/silicone layer 28 and support film 26 is then cut into pieces (if needed) about the same size as the submount wafer 12, such as 4x4 inches or other size. Fig. 6 illustrates a portion of a cut piece of the phosphor/silicone layer 28 and support film 26.
In step 40, the phosphor/silicone layer 28 is mounted face down over the submount wafer 12. Fiducials on the wafer 12 may be used for alignment of the cut piece. In step 42, as shown in Fig. 7, a first lamination step is performed. The
phosphor/silicone layer 28 is heated in a chamber to 40-120°C to soften it and to cause the phosphor/silicone layer 28 to adhere to the top surfaces of the LED dies 10. A vacuum is created in the chamber, and downward mechanical pressure is applied to the surface of the support film 26, such as by a resilient pad, a diaphragm, or compressed air. The uniform pressure causes the phosphor/silicone layer 28 to form an airtight seal around the periphery of the submount wafer 12 and helps the phosphor/silicone layer 28 to uniformly adhere to the top surfaces of the LED dies 10. Due to the relative stiffness of the support film 26 and the high density of LED dies 10, there may be no or little contact of the phosphor/silicone layer 28 to the submount wafer 12 between the LED dies 10. The support film 26 helps protect the phosphor/silicone layer 28 during application of the mechanical pressure and prevents deformation of the phosphor/silicone layer 28 over the LED dies 10 during this first lamination step.
If the vacuum alone is sufficient to create the peripheral seal, then the pressure is not needed. In step 44, the structure is removed from the chamber, cooled to room temperature, and the support film 26 is removed, such as by using adhesive tape. Fig. 8 shows the resulting structure. The airtight seal around the periphery of the submount wafer 12 prevents air from filling in between the phosphor/silicone layer 28 and the submount wafer 12. If the support film 26 can be removed while the structure remains in the chamber, the process can be performed in-situ.
In step 46, a second lamination process is performed. The structure is placed in a vacuum chamber and heated to an elevated temperature of about 70-130°C, and a vacuum is created to remove the remaining air between the phosphor/silicone layer 28 and the submount wafer 12. Since the support film 26 has been removed, the air can escape through small pores in the thin phosphor/silicone layer 28. Generally, the temperature during the second lamination process is higher than the temperature used during the first lamination process to cause the phosphor/silicone layer 28 to be more pliable/conformable. The extent of the vacuum and the process times depend on the specific materials used. Generally, a thinner phosphor/silicone layer 28 requires less time to remove the remaining air than a thicker phosphor/silicone layer 28.
In step 48, as shown in Fig. 9, air is then allowed to enter the chamber to pressurize the chamber, which compresses the heated/softened phosphor/silicone layer 28 against the LED dies 10 and submount wafer 12 to conform the phosphor/silicone layer 28 around the LED dies 10 and encapsulate them. The peripheral seal prevents this air from entering between the phosphor/silicone layer 28 and the submount wafer 12.
In step 50, as shown in Fig. 10, an optional silicone lens 60 is molded over each LED die 10 using compression molding. The submount wafer 12 is then diced, such as by sawing, to separate out the mounted phosphor-converted LED dies, one of which is shown in Fig. 10.
The double lamination process allows the support film 26 to remain on the phosphor/silicone layer 28 until the phosphor/silicone layer 28 is fully supported by the LED dies 10 and submount wafer 12 and the peripheral seal is created. Then, in the second lamination step, without the support film 26, the conformal encapsulation occurs. Many variations of the above-described mass production process are possible.
Variations include the temperatures needed to process the phosphor/silicone layer 28, the various sizes, the order of the steps such as cutting the pieces (if needed) before or after the protective film 32 is removed, types of LED dies and submount wafers used, additives to the silicone encapsulating layer, among others. The LED dies can be other than flip-chips and may be formed of any suitable material.
In one embodiment, the silicone (or other binder material) encapsulation layer is infused with light scattering particles such as silica or Ti02, or the clear silicone may have no additives but has a selected index of refraction for maximizing light extraction from the LED dies 10.
Multiple layers may be sequentially laminated over each other by repeating the above-described technique for each layer, such as for white point tuning, scattering plus phosphor conversion, or other purpose.
The phosphor/silicone layer 28 need not be laminated directly over the LED dies 10 but may be laminated over an encapsulant layer or lens, such as silicone, or other layer that has already been formed over the LED dies 10. By distancing the layer 28 from the LED die, some advantages result, such as less die absorption from backscattered light and improved color uniformity. For example, the phosphor/silicone layer 28 may be laminated over the lens 60 in Fig. 10, where the lens 60 is first formed over the LED dies 10 using a
compression molding process performed on the populated submount wafer 12.
The lamination process may be applied to any size submount wafer or any other type of substrate, even a substrate including only one LED die. The substrate need not have metal electrodes or other interconnection functions.
While particular embodiments of the present invention have been shown and described, it will be obvious to those skilled in the art that changes and modifications may be made without departing from this invention in its broader aspects and, therefore, the appended claims are to encompass within their scope all such changes and modifications as fall within the true spirit and scope of this invention. For example, various steps in the process flowchart of Fig. 11 may be optional depending on the equipment, the layer to be laminated, whether the process is for mass production, and other factors.

Claims

CLAIMS What is claimed is:
1. A method for fabricating a light emitting diode (LED) device comprising: a. providing at least one LED die on a substrate; b. providing a preformed lamination layer having a first surface and a second surface, the lamination layer being supported by a support film on the first surface; c. mounting the lamination layer over the at least one LED die, with the support film remaining on the lamination layer; d. heating the lamination layer to a first temperature to soften the lamination layer; e. while the lamination layer is heated, creating an airtight seal between the lamination layer and the substrate surrounding the at least one LED die; f. removing the support film after step e; g. heating the lamination layer to a second temperature in a vacuum, after the support film has been removed, to remove air between the lamination layer and the substrate; and h. conforming the lamination layer over the at least one LED die.
2. The method of Claim 1 wherein step d further comprises creating a vacuum to remove air between the lamination layer and the substrate.
3. The method of Claim 1 wherein, in step e, the lamination layer adheres to the at least one LED die.
4. The method of Claim 1 further comprising, between steps e and f, exposing the lamination layer to ambient air, wherein the airtight seal substantially prevents the air entering between the lamination layer and the substrate.
5. The method of Claim 1 wherein the second temperature is greater than the first temperature.
6. The method of Claim 1 wherein, in step g, air is removed from between the lamination layer and the substrate by escaping through pores in the lamination layer.
7. The method of Claim 1 wherein step h comprises conforming the lamination layer over the at least one LED die by exposing the lamination layer to ambient air pressure while the lamination layer remains heated.
8. The method of Claim 1 wherein step e comprises creating an airtight seal between the lamination layer and the substrate surrounding the at least one LED die by exerting pressure on the lamination layer.
9. The method of Claim 1 wherein the lamination layer directly contacts the at least one LED die.
10. The method of Claim 1 wherein the at least one LED die comprises an array of LED dies mounted on the submount substrate.
1 1. The method of Claim 1 wherein the lamination layer comprises a binder that comprises silicone.
12. The method of Claim 1 further comprising forming the lamination layer using the method comprising: mixing particles in silicone to form a slurry; dispensing the slurry on the support film; and drying the slurry.
13. The method of Claim 1 wherein the lamination layer comprises at least one type of phosphor in a silicone binder.
14. The method of Claim 1 further comprising cutting the lamination layer and support film to be about the same size as the substrate.
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