WO2011160129A2 - Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices - Google Patents
Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices Download PDFInfo
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- WO2011160129A2 WO2011160129A2 PCT/US2011/041106 US2011041106W WO2011160129A2 WO 2011160129 A2 WO2011160129 A2 WO 2011160129A2 US 2011041106 W US2011041106 W US 2011041106W WO 2011160129 A2 WO2011160129 A2 WO 2011160129A2
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- WIPO (PCT)
- Prior art keywords
- plane
- planes
- region
- surface regions
- gallium
- Prior art date
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 30
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 230000003287 optical effect Effects 0.000 title abstract description 15
- 238000000034 method Methods 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 31
- 229910003460 diamond Inorganic materials 0.000 claims description 13
- 239000010432 diamond Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 41
- 238000010586 diagram Methods 0.000 description 14
- 238000000605 extraction Methods 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008635 plant growth Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Definitions
- This invention relates generally to lighting techniques. More specifically, embodiments of the invention include techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, such as GaN configured in polar crystalline orientations. In some embodiments, the gallium and nitrogen containing substrate is configured in a triangular shape or a diamond shape.
- the invention can be applied to applications such as white lighting, multi-colored lighting, general illumination, decorative lighting, automotive and aircraft lamps, street lights, lighting for plant growth, indicator lights, lighting for flat panel displays, and other optoelectronic devices.
- the conventional light bulb commonly called the “Edison bulb”
- the conventional light bulb uses a tungsten filament enclosed in a glass bulb sealed in a base, which is screwed into a socket.
- the socket is coupled to an AC power or DC power source.
- the conventional light bulb can be found commonly in houses, buildings, and outdoor lightings, and other areas requiring light. Unfortunately, drawbacks exist with the
- the conventional light bulb dissipates more than 90% of the energy used as thermal energy. Additionally, the conventional light bulb routinely fails often due to thermal expansion and contraction of the filament element.
- Solid state lighting techniques are known. Solid state lighting relies upon semiconductor materials to produce light emitting diodes, commonly called LEDs. At first, red LEDs were demonstrated and introduced into commerce. Red LEDs use Aluminum Indium Gallium Phosphide or AlInGaP semiconductor materials. Most recently, Shuji Nakamura pioneered the use of InGaN materials to produce LEDs emitting light in the blue color range for blue LEDs. The blue colored LEDs led to innovations such as solid state white lighting, the blue laser diode, which in turn enabled the Blu-RayTM (trademark of the Blu-Ray Disc Association) DVD player, and other developments. Other colored LEDs have also been proposed.
- Conventional LED fabrication process typically employs a wafer scribing and breaking procedure to generate individual LED chips. These wafers are typically scribed along two substantially orthogonal axes, wherein these individual axes are respectively parallel to and co-planar with two non-equivalent crystal plane orientations of the wafer. For example, for an LED wafer comprising GaN on sapphire singulated into square or rectangular chips, the two orthogonal scribe axes are respectively parallel to and co-planar with m-plane and a-plane orientations of the sapphire wafer, wherein the m-planes and a-planes are not equivalent by definition.
- the present method includes a scribe and break process for bulk c-plane GaN wafers.
- the wafers are scribed along two or more non-orthogonal axes. These two or more axes are respectively parallel to and co-planar with equivalent crystal planes of the GaN wafer.
- a bulk c-plane GaN wafer is scribed along three axes (with an angle of 60o between each of these three axes) wherein these three axes are respectively parallel to and co-planar with three m-plane orientations of the c-plane GaN wafer.
- the three m-plane orientations are equivalent by definition.
- the present invention includes a method to fabricate a triangular- shaped or diamond-shaped chip geometry in the case of c-plane GaN wafers, which may have several advantages over conventional square or rectangular geometries.
- This present invention utilizes the in-plane 6-fold rotational symmetry and crystallography unique to c- plane GaN wafers - GaN has the Wurtzite crystal structure according to a specific
- the bulk c-plane GaN wafer may be scribed along three axes (with an angle of 60 degrees between each of these three axes) wherein these three axes are respectively parallel to and co-planar with three a-plane orientations of the c-plane GaN wafer, the three a-plane orientations being equivalent by definition.
- the present invention provides a gallium and nitrogen containing substrate configured in a triangular shape consisting of no more than five surface regions.
- the five surface regions comprise three surface regions configured from respective first equivalent planes and two surface regions configured from second equivalent planes.
- the invention provides a diamond shape substrate consisting of no more than six surface regions.
- the six surface regions comprise four surface regions configured from respective first equivalent planes and two surface regions configured from second equivalent planes.
- a first surface region configured in a c plane orientation and a second surface region configured in the c-plane orientation.
- the method also includes exposing at least a first m-plane region, a second m-plane region, and a third m-plane region.
- the present invention provides a method of separating die from a gallium and nitrogen containing substrate.
- the invention also includes a gallium and nitrogen containing optical device.
- the device includes a gallium and nitrogen containing substrate having a base region and no more than three major planar side regions configured in a triangular arrangement provided from the base region.
- the present method and structure can include one or more of the following elements that can include variations, modifications, and alternatives.
- a bulk c-plane GaN wafer with an overlying LED epitaxial structure and with p-type and n-type metallizations is fabricated, such that there are 'scribe streets' along three directions (at 60o angles relative to each other) separating individual LED traces on the wafer.
- the scribe streets are aligned to be respectively parallel to three m-plane orientations of the c-plane GaN wafer, and are designed to intersect such that the triangle shape defined by three scribe lines is an equilateral triangle.
- the LED wafer is laser-scribed on a first surface of the wafer, along a first 'scribe street' direction.
- the scribe depth in the scribed regions on the first surface is typically 20-50% of the thickness of the LED wafer.
- the LED wafer is then laser-scribed on a first surface of the wafer, along a second 'scribe street' direction. The scribe depth in the scribed regions on the first surface is typically 20-50% of the thickness of the LED wafer.
- the LED wafer is laser-scribed on a first surface of the wafer, along the third 'scribe street' direction.
- the scribe depth in the scribed regions on the first surface is typically 20-50% of the thickness of the LED wafer.
- the scribe depth in the scribed regions on the second surface is typically 20- 50% of the thickness of the LED wafer.
- the scribed LED wafer is then broken using an anvil breaker setup along the three 'scribe street' orientations. Breaking occurs along the planes defined by scribed regions on the first surface of the wafer in a specific embodiment. Breaking along the third 'scribe street' orientation yields individual triangle-shaped LED chips.
- the invention provides for a method for singulation of thick c-plane GaN wafers into triangle-shaped LED chips defined by three equivalent m- plane oriented sidewalls.
- the m-plane is a natural break plane, which easily cleaves, in the case of c-plane GaN wafers, and therefore, a singulation process involving breaking exclusively or predominately along a set of m-plane orientations will have a higher yield than a process involving breaking along both m-plane orientations and a-plane orientations.
- the present invention provides for a method for singulation of c-plane GaN wafers into triangle-shaped LED chips defined by three equivalent m-plane oriented sidewalls.
- break along the a-plane yields a characteristic surface texture which results in improved light extraction.
- the invention provides triangle-shaped chips characterized by improved light extraction when compared to conventional square- or rectangle-shaped chips, due to an increase in the per-pass probability of escape of in-plane emission arising from a decrease in the probability of total internal reflection at the sidewalls. Additionally, triangle-shaped chips provide fewer trapped trajectories of light than square or rectangle chips, so that the chip light extraction efficiency can be increased.
- Figures 1 through 3 are diagrams illustrating a method for forming triangular shaped gallium and nitrogen containing material.
- Figures 4 through 6 are diagrams illustrating a method for forming a diamond shaped gallium and nitrogen containing material.
- Figure 7 is a diagram showing relative orientations of m-planes (red lines) and a- planes (green lines), wherein the plane of the diagram represents a c-plane, in the case of the GaN (Wurtzite) crystal structure.
- Figure 8 is a side-view diagram depecting a laser scribing process for an optical device.
- Figure 9 is a side-view diagram depecting a breaking process for an optical device.
- Figure 10 is the light extraction diagram obtained from modeling light extraction in a square and a triangular chip.
- Figure 1 1 is a simulation of light extraction efficiency of a triangular chip as a function of sidewall surface roughening.
- Figures 1 through 3 are simplified diagrams illustrating a method for forming a triangular shaped gallium and nitrogen containing material according to an embodiment of the present invention.
- the invention provides a gallium and nitrogen containing substrate member.
- the member includes a gallium and nitrogen containing thickness of material configured in a triangular shape consisting of no more than five surface regions.
- the five surface regions comprises a three surface regions configured from respective first equivalent planes and the five surface regions excluding the three surface regions comprises two surface regions configured from second equivalent planes.
- a top-view of a triangular shaped chip showing orientation of three edges relative to GaN m-planes according to a specific embodiment (see dashed or red lines).
- the gallium and nitrogen containing substrate is triangular shaped.
- the triangular shaped substrate may be an extruded triangular shape.
- the three surface regions of the triangular shaped regions are respective first equivalent planes, which are either m-planes or a-planes, see Figure 2.
- the second surface regions of the triangular shaped regions are respective second equivalent planes, which are c- planes.
- the gallium and nitrogen containing substrate is a GaN substrate.
- the three surface regions of the triangular shaped regions are configured from respective scribes provided on respective first equivalent planes.
- the three surface regions are configured by an interior region of 180 Degrees or the like.
- the two surface regions are configured in parallel arrangement to each other.
- the GaN substrate is configured from bulk c-plane GaN having three m-plane surface orientations exposed.
- the gallium and nitrogen containing member comprises at least an optical device thereon in at least one specific embodiment.
- the optical device can be a light emitting diode, a laser device, or other device, as well as combinations of optical and electrical devices. Other types of devices can include electrical switching devices, mechanical devices, and any combination of these and the like.
- Figures 4 through 6 are simplified diagrams illustrating a method for forming a triangular shaped gallium and nitrogen containing material according to an embodiment of the present invention.
- the substrate shows four edges relative to GaN m-planes (see dotted or red lines).
- the substrate member includes a gallium and nitrogen containing thickness of material configured in a diamond shape consisting of no more than six surface regions.
- the six surface regions comprises four surface regions configured from respective first equivalent planes and the six surface regions excluding the four surface regions comprises two surface regions configured from second equivalent planes.
- the substrate that is the diamond shape is free from a 90 degree intersection between any two of the first four surface regions out of the six surface regions.
- the diamond shape includes the first equivalent planes that are either m-planes or a-planes, as illustrated by Figure 5. As shown, the four edges are associated with GaN a-planes (green dashed lines or dashed lines).
- the diamond shape includes the second equivalent planes that are c-planes.
- the four surface regions of the diamond shape are configured from respective scribes provided on respective first equivalent planes in a specific embodiment.
- the four surface regions are configured by an interior region free from a 90 degree angle.
- the two surface regions are configured in parallel arrangement to each other.
- the GaN substrate is configured from bulk c-plane GaN having four m-plane surface orientations exposed.
- the gallium and nitrogen containing member comprises at least an optical device thereon in at least one specific embodiment.
- the optical device can be a light emitting diode, a laser device, or other device, as well as combinations of optical and electrical devices.
- Figure 7 is a simplified diagram showing relative orientations of m-planes (red lines) and a-planes (green lines), wherein the plane of the diagram represents a c-plane, in the case of the GaN (Wurtzite) crystal structure according to an embodiment of the present invention.
- Figure 8 is a simplified side-view diagram depicting a laser scribing process for an optical device according to an embodiment of the present invention.
- the LED wafer is laser-scribed within the 'scribe streets' on a first surface of the wafer, along one or more axes according to a specific embodiment.
- the scribing can occur using a saw, a diamond scribe, a chemical etchant (with or without a photo-assisted component), reactive ion or plasma etchant or milling, or combinations, and the like.
- the scribe depth in the scribed regions on the first surface is typically 20-50% of the thickness of the LED wafer according to a specific embodiment. In other embodiments, the scribe depth can vary and have other dimension.
- the LED wafer is then flipped over, and is then laser- scribed within the 'scribe streets' on a second surface of the wafer, along one or more axes, taking care to ensure that the scribes on the second surface are aligned to be substantially overlying the scribes on the first side of the wafer.
- the scribe depth in the scribed regions on the second surface is typically 20-50% of the thickness of the LED wafer.
- Figure 9 is a simplified side-view diagram depicting a breaking process for an optical device according to an embodiment of the present invention. As shown, breaking occurs along the planes defined by two aligned scribed regions on the two opposing sides of the wafer.
- the present method provides for the singulation of thick GaN wafers, thereby eliminating the need for expensive and time-consuming lapping and polishing steps in the LED fabrication process.
- Figure 10 displays modeling results which compare the light extraction efficiency Cex of square and triangular chips.
- the simulation yields the light extraction diagram, e.g. the extraction efficiency versus the direction of emission of photons (kx,ky).
- Figure 1 1 illustrates the impact of sidewall roughening on light extraction efficiency, as predicted by modeling.
- the light extraction efficiency of a triangular chip can exceed 80% (versus 57% for smooth sidewalls).
- the present method provides for the singulation of thick GaN wafers into individual LED chips with lateral chip dimensions that are significantly smaller than those enabled by standard single-sided scribe methods.
- the present method provides higher process yields at the scribe and break process steps than conventional methods. Additionally, there is a reduced incidence of chip-outs, as well as doublets (pairs of chips that are not separated during the break step).
- the scribed regions may induce surface roughening on the side-walls of the generated LED chips which may enhance light extraction from the chips when compared to chips generated by scribing on a single side.
- the present method can also include other variations, combinations, and modifications, as described below.
- the LED wafer may be a c-plane GaN wafer
- An individual LED wafer may be scribed on at least one of the two surfaces using at least one of a plurality of scribe methods in other embodiments.
- the scribe methods may include at least two or more methods selected from laser scribing, diamond scribing, and sawing/dicing.
- the scribe depth on any one side of the LED wafer may be varied between 0.5% and 99.5% of the thickness of the LED wafer.
- the scribed regions may have continuous scribe lines, or may comprise of dashed or dotted scribe lines.
- the scribed regions along two or more axes may or may not intersect in the regions defined by intersecting 'scribe streets,' by design according to a specific embodiment.
- scribing may be performed along at least one 'scribe street' orientation on a first surface, and along at least one 'scribe street' orientation on the second surface, such that at least two 'scribe street' orientations chosen are non-parallel according to a specific embodiment.
- the scribed LED wafer may be broken using a method or a plurality of methods chosen from a group including anvil breaker, roller breaker or breaker bar, combinations, and the like.
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201180029188.7A CN102947492B (en) | 2010-06-18 | 2011-06-20 | For optics containing gallium and the triangle of nitrogen or the configuration of rhombus |
DE112011102068T DE112011102068T5 (en) | 2010-06-18 | 2011-06-20 | TRIANGULAR OR ROBUST SHAPED GALLIUM AND NITROGEN ASSISTANCE FOR OPTICAL COMPONENTS |
JP2013515583A JP5870097B2 (en) | 2010-06-18 | 2011-06-20 | Gallium and nitrogen containing triangle or rhombus configuration for optical devices |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35647310P | 2010-06-18 | 2010-06-18 | |
US61/356,473 | 2010-06-18 | ||
US13/163,482 | 2011-06-17 | ||
US13/163,482 US8293551B2 (en) | 2010-06-18 | 2011-06-17 | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
Publications (2)
Publication Number | Publication Date |
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WO2011160129A2 true WO2011160129A2 (en) | 2011-12-22 |
WO2011160129A3 WO2011160129A3 (en) | 2012-03-01 |
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PCT/US2011/041106 WO2011160129A2 (en) | 2010-06-18 | 2011-06-20 | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
Country Status (4)
Country | Link |
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US (1) | US8293551B2 (en) |
JP (2) | JP5870097B2 (en) |
DE (1) | DE112011102068T5 (en) |
WO (1) | WO2011160129A2 (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI470823B (en) * | 2009-02-11 | 2015-01-21 | Epistar Corp | Light-emitting device and manufacturing method thereof |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8791499B1 (en) | 2009-05-27 | 2014-07-29 | Soraa, Inc. | GaN containing optical devices and method with ESD stability |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
KR101368906B1 (en) | 2009-09-18 | 2014-02-28 | 소라, 인코포레이티드 | Power light emitting diode and method with current density operation |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9450143B2 (en) * | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
KR101909633B1 (en) | 2011-12-30 | 2018-12-19 | 삼성전자 주식회사 | Method of cutting light emitting device chip wafer using laser scribing |
EP2823515A4 (en) | 2012-03-06 | 2015-08-19 | Soraa Inc | Light emitting diodes with low refractive index material layers to reduce light guiding effects |
US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
US8802471B1 (en) | 2012-12-21 | 2014-08-12 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
JP2015207752A (en) | 2014-04-08 | 2015-11-19 | パナソニックIpマネジメント株式会社 | Nitride semiconductor light emission diode |
GB201418810D0 (en) | 2014-10-22 | 2014-12-03 | Infiniled Ltd | Display |
GB201418772D0 (en) * | 2014-10-22 | 2014-12-03 | Infiniled Ltd | Display |
KR102306671B1 (en) * | 2015-06-16 | 2021-09-29 | 삼성전자주식회사 | Light emitting diode package |
KR102599333B1 (en) * | 2016-12-23 | 2023-11-06 | 엘지디스플레이 주식회사 | Light source module, back light unit and liquid crystal display device using the same |
DE102017120037A1 (en) * | 2017-08-31 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Method for producing a plurality of radiation-emitting semiconductor chips, radiation-emitting semiconductor chip and radiation-emitting semiconductor chip array |
DE102022123683A1 (en) | 2022-09-15 | 2024-03-21 | Ams-Osram International Gmbh | OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070054476A1 (en) * | 2005-09-05 | 2007-03-08 | Sumitomo Electric Industries. Ltd. | Method of producing a nitride semiconductor device and nitride semiconductor device |
US20090095973A1 (en) * | 2007-09-27 | 2009-04-16 | Rohm Co., Ltd. | Semiconductor light emitting device |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3557011B2 (en) * | 1995-03-30 | 2004-08-25 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
JPH0982587A (en) * | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | Preparation of nonsquare electronic chip |
US5764674A (en) | 1996-06-28 | 1998-06-09 | Honeywell Inc. | Current confinement for a vertical cavity surface emitting laser |
US6542526B1 (en) | 1996-10-30 | 2003-04-01 | Hitachi, Ltd. | Optical information processor and semiconductor light emitting device suitable for the same |
US6104450A (en) | 1996-11-07 | 2000-08-15 | Sharp Kabushiki Kaisha | Liquid crystal display device, and methods of manufacturing and driving same |
JPH10335750A (en) | 1997-06-03 | 1998-12-18 | Sony Corp | Semiconductor substrate and semiconductor device |
JPH11340507A (en) * | 1998-05-26 | 1999-12-10 | Matsushita Electron Corp | Semiconductor light-emitting element and its manufacture |
JPH11340576A (en) * | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | Gallium nitride based semiconductor device |
JP2001177146A (en) * | 1999-12-21 | 2001-06-29 | Mitsubishi Cable Ind Ltd | Triangular shape semiconductor element and manufacturing method therefor |
US6858882B2 (en) | 2000-09-08 | 2005-02-22 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device and optical device including the same |
US6936488B2 (en) | 2000-10-23 | 2005-08-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
JP2002190635A (en) | 2000-12-20 | 2002-07-05 | Sharp Corp | Semiconductor laser element and its fabricating method |
JP4055503B2 (en) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | Semiconductor light emitting device |
JP3801125B2 (en) | 2001-10-09 | 2006-07-26 | 住友電気工業株式会社 | Single crystal gallium nitride substrate, method for crystal growth of single crystal gallium nitride, and method for manufacturing single crystal gallium nitride substrate |
US6498355B1 (en) | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
US6809781B2 (en) | 2002-09-24 | 2004-10-26 | General Electric Company | Phosphor blends and backlight sources for liquid crystal displays |
US7009199B2 (en) | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
US7157745B2 (en) | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
US7341880B2 (en) | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
US7128849B2 (en) | 2003-10-31 | 2006-10-31 | General Electric Company | Phosphors containing boron and metals of Group IIIA and IIIB |
US20060038542A1 (en) | 2003-12-23 | 2006-02-23 | Tessera, Inc. | Solid state lighting device |
US20050199899A1 (en) | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
US6956246B1 (en) | 2004-06-03 | 2005-10-18 | Lumileds Lighting U.S., Llc | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
KR100661708B1 (en) | 2004-10-19 | 2006-12-26 | 엘지이노텍 주식회사 | Nitride semiconductor LED and fabrication method thereof |
US7858408B2 (en) | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
US7358542B2 (en) | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
KR101145755B1 (en) | 2005-03-10 | 2012-05-16 | 재팬 사이언스 앤드 테크놀로지 에이젼시 | Technique for the growth of planar semi-polar gallium nitride |
US7358543B2 (en) | 2005-05-27 | 2008-04-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device |
TWI397199B (en) | 2005-06-21 | 2013-05-21 | Japan Science & Tech Agency | Packaging technique for the fabrication of polarized light emitting diodes |
US8148713B2 (en) | 2008-04-04 | 2012-04-03 | The Regents Of The University Of California | Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes |
CN101371413A (en) | 2006-01-18 | 2009-02-18 | 松下电器产业株式会社 | Nitride semiconductor light-emitting device |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
JP4819577B2 (en) | 2006-05-31 | 2011-11-24 | キヤノン株式会社 | Pattern transfer method and pattern transfer apparatus |
US20090273005A1 (en) | 2006-07-24 | 2009-11-05 | Hung-Yi Lin | Opto-electronic package structure having silicon-substrate and method of forming the same |
JP2008141118A (en) | 2006-12-05 | 2008-06-19 | Rohm Co Ltd | Semiconductor white light emitting device |
TW200834962A (en) | 2007-02-08 | 2008-08-16 | Touch Micro System Tech | LED array package structure having Si-substrate and method of making the same |
JP2010518626A (en) | 2007-02-12 | 2010-05-27 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Optimization of laser rod orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers |
US7843980B2 (en) | 2007-05-16 | 2010-11-30 | Rohm Co., Ltd. | Semiconductor laser diode |
JP4614988B2 (en) | 2007-05-31 | 2011-01-19 | シャープ株式会社 | Nitride-based semiconductor laser device and manufacturing method thereof |
EP2003696B1 (en) | 2007-06-14 | 2012-02-29 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate |
US7733571B1 (en) | 2007-07-24 | 2010-06-08 | Rockwell Collins, Inc. | Phosphor screen and displays systems |
JP2009071162A (en) * | 2007-09-14 | 2009-04-02 | Rohm Co Ltd | Semiconductor device and method of manufacturing semiconductor device |
JP5053893B2 (en) * | 2008-03-07 | 2012-10-24 | 住友電気工業株式会社 | Method for fabricating a nitride semiconductor laser |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US20100006873A1 (en) | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
CN101621101A (en) | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | LED and production method thereof |
US8124996B2 (en) | 2008-08-04 | 2012-02-28 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US8148801B2 (en) | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
US7923741B1 (en) | 2009-01-05 | 2011-04-12 | Lednovation, Inc. | Semiconductor lighting device with reflective remote wavelength conversion |
US20110056429A1 (en) | 2009-08-21 | 2011-03-10 | Soraa, Inc. | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
JP5123331B2 (en) * | 2010-01-18 | 2013-01-23 | シャープ株式会社 | Nitride semiconductor chip manufacturing method and nitride semiconductor chip |
-
2011
- 2011-06-17 US US13/163,482 patent/US8293551B2/en active Active
- 2011-06-20 JP JP2013515583A patent/JP5870097B2/en active Active
- 2011-06-20 DE DE112011102068T patent/DE112011102068T5/en not_active Withdrawn
- 2011-06-20 WO PCT/US2011/041106 patent/WO2011160129A2/en active Application Filing
-
2015
- 2015-07-12 JP JP2015139276A patent/JP6073988B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070054476A1 (en) * | 2005-09-05 | 2007-03-08 | Sumitomo Electric Industries. Ltd. | Method of producing a nitride semiconductor device and nitride semiconductor device |
US20090095973A1 (en) * | 2007-09-27 | 2009-04-16 | Rohm Co., Ltd. | Semiconductor light emitting device |
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JP5870097B2 (en) | 2016-02-24 |
JP6073988B2 (en) | 2017-02-01 |
JP2013535109A (en) | 2013-09-09 |
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US8293551B2 (en) | 2012-10-23 |
US20110315999A1 (en) | 2011-12-29 |
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CN102947492A (en) | 2013-02-27 |
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