WO2011133386A3 - Closed-loop control for improved polishing pad profiles - Google Patents

Closed-loop control for improved polishing pad profiles Download PDF

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Publication number
WO2011133386A3
WO2011133386A3 PCT/US2011/032447 US2011032447W WO2011133386A3 WO 2011133386 A3 WO2011133386 A3 WO 2011133386A3 US 2011032447 W US2011032447 W US 2011032447W WO 2011133386 A3 WO2011133386 A3 WO 2011133386A3
Authority
WO
WIPO (PCT)
Prior art keywords
pad
loop control
conditioning
closed
clc
Prior art date
Application number
PCT/US2011/032447
Other languages
French (fr)
Other versions
WO2011133386A2 (en
Inventor
Sivakumar Dhandapani
Jun Qian
Christopher D. Cocca
Jason Garcheung Fung
Shou-Sung Chang
Charles C. Garretson
Gregory E. Menk
Stan D. Tsai
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020127020853A priority Critical patent/KR101738885B1/en
Priority to JP2013506182A priority patent/JP2013525126A/en
Priority to CN201180007366.6A priority patent/CN102858495B/en
Publication of WO2011133386A2 publication Critical patent/WO2011133386A2/en
Publication of WO2011133386A3 publication Critical patent/WO2011133386A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.
PCT/US2011/032447 2010-04-20 2011-04-14 Closed-loop control for improved polishing pad profiles WO2011133386A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020127020853A KR101738885B1 (en) 2010-04-20 2011-04-14 Closed-loop control for improved polishing pad profiles
JP2013506182A JP2013525126A (en) 2010-04-20 2011-04-14 Closed loop control for improved polishing pad profile
CN201180007366.6A CN102858495B (en) 2010-04-20 2011-04-14 Loop circuit for improved grinding pad profile controls

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32598610P 2010-04-20 2010-04-20
US61/325,986 2010-04-20

Publications (2)

Publication Number Publication Date
WO2011133386A2 WO2011133386A2 (en) 2011-10-27
WO2011133386A3 true WO2011133386A3 (en) 2012-02-02

Family

ID=44788543

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/032447 WO2011133386A2 (en) 2010-04-20 2011-04-14 Closed-loop control for improved polishing pad profiles

Country Status (6)

Country Link
US (1) US9138860B2 (en)
JP (1) JP2013525126A (en)
KR (1) KR101738885B1 (en)
CN (1) CN102858495B (en)
TW (1) TWI511839B (en)
WO (1) WO2011133386A2 (en)

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US20120270477A1 (en) * 2011-04-22 2012-10-25 Nangoy Roy C Measurement of pad thickness and control of conditioning
JP5896625B2 (en) * 2011-06-02 2016-03-30 株式会社荏原製作所 Method and apparatus for monitoring the polishing surface of a polishing pad used in a polishing apparatus
US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
JP5964262B2 (en) 2013-02-25 2016-08-03 株式会社荏原製作所 Method for adjusting profile of polishing member used in polishing apparatus, and polishing apparatus
JP6010511B2 (en) * 2013-08-22 2016-10-19 株式会社荏原製作所 Method for measuring surface roughness of polishing pad
US9286930B2 (en) * 2013-09-04 2016-03-15 Seagate Technology Llc In-situ lapping plate mapping device
JP6033751B2 (en) * 2013-10-07 2016-11-30 株式会社荏原製作所 Polishing method
JP6093741B2 (en) * 2014-10-21 2017-03-08 信越半導体株式会社 Polishing apparatus and wafer polishing method
WO2016163991A1 (en) * 2015-04-07 2016-10-13 Hewlett-Packard Development Company, L.P. Methods of polishing
US9669514B2 (en) * 2015-05-29 2017-06-06 Taiwan Semiconductor Manufacturing Co., Ltd System and method for polishing substrate
KR101916211B1 (en) * 2015-12-07 2018-11-07 주식회사 케이씨텍 Chemical mechanical polishing apparatus and method
KR101992817B1 (en) * 2016-02-15 2019-09-30 고려대학교 산학협력단 preparation method of lung cancer animal model
KR101870701B1 (en) 2016-08-01 2018-06-25 에스케이실트론 주식회사 Polishing measuring apparatus and method for controlling polishing time thereof, and pllishing control system including the same
CN106272071B (en) * 2016-08-24 2018-11-16 苏州苏铸成套装备制造有限公司 A kind of laser sensor application method being exclusively used in numerical control grinding machine
KR102581481B1 (en) 2016-10-18 2023-09-21 삼성전자주식회사 Method of chemical mechanical polishing, method of manufacturing semiconductor device and apparatus of manufacturing semiconductor
US10265828B2 (en) * 2016-12-15 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for monitoring polishing pad before CMP process
JP7023455B2 (en) * 2017-01-23 2022-02-22 不二越機械工業株式会社 Work polishing method and work polishing equipment
WO2018164804A1 (en) * 2017-03-06 2018-09-13 Applied Materials, Inc. Spiral and concentric movement designed for cmp location specific polish (lsp)
US10675732B2 (en) * 2017-04-18 2020-06-09 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for CMP pad conditioning
JP6971664B2 (en) * 2017-07-05 2021-11-24 株式会社荏原製作所 Substrate polishing equipment and method
US11020837B2 (en) * 2017-11-14 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Monolithic platen
CN111132802A (en) * 2017-11-16 2020-05-08 应用材料公司 Prediction filter for polishing pad wear rate monitoring
US11192215B2 (en) 2017-11-16 2021-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with pad wear indicator
US11325221B2 (en) 2017-11-16 2022-05-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with multipurpose composite window
US10792783B2 (en) * 2017-11-27 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. System, control method and apparatus for chemical mechanical polishing
US10950483B2 (en) 2017-11-28 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for fixed focus ring processing
US11389928B2 (en) * 2017-11-30 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for conditioning polishing pad
KR102101348B1 (en) * 2018-08-16 2020-04-16 주식회사 엠오에스 Apparatus and method for inspecting of membrane
US11298794B2 (en) 2019-03-08 2022-04-12 Applied Materials, Inc. Chemical mechanical polishing using time share control
US10953514B1 (en) * 2019-09-17 2021-03-23 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polishing apparatus and method
US11794305B2 (en) 2020-09-28 2023-10-24 Applied Materials, Inc. Platen surface modification and high-performance pad conditioning to improve CMP performance
CN112676947A (en) * 2020-12-28 2021-04-20 王兆举 Automatic workpiece shaft butt-joint positioning mechanism for intelligent plane refiner

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Also Published As

Publication number Publication date
WO2011133386A2 (en) 2011-10-27
CN102858495B (en) 2016-06-01
JP2013525126A (en) 2013-06-20
US9138860B2 (en) 2015-09-22
US20110256812A1 (en) 2011-10-20
KR101738885B1 (en) 2017-06-08
TWI511839B (en) 2015-12-11
KR20130064041A (en) 2013-06-17
TW201210745A (en) 2012-03-16
CN102858495A (en) 2013-01-02

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