WO2011084232A2 - Multiple wavelength x-ray source - Google Patents

Multiple wavelength x-ray source Download PDF

Info

Publication number
WO2011084232A2
WO2011084232A2 PCT/US2010/056011 US2010056011W WO2011084232A2 WO 2011084232 A2 WO2011084232 A2 WO 2011084232A2 US 2010056011 W US2010056011 W US 2010056011W WO 2011084232 A2 WO2011084232 A2 WO 2011084232A2
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
target
region
anode
cathode
Prior art date
Application number
PCT/US2010/056011
Other languages
French (fr)
Other versions
WO2011084232A3 (en
Inventor
Krzysztof Kozaczek
Sterling Cornaby
Steven Liddiard
Charles Jensen
Original Assignee
Moxtek, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Moxtek, Inc. filed Critical Moxtek, Inc.
Publication of WO2011084232A2 publication Critical patent/WO2011084232A2/en
Publication of WO2011084232A3 publication Critical patent/WO2011084232A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08Anodes; Anti cathodes
    • H01J35/112Non-rotating anodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06Cathodes
    • H01J35/064Details of the emitter, e.g. material or structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/06Cathodes
    • H01J35/066Details of electron optical components, e.g. cathode cups
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/16Vessels; Containers; Shields associated therewith
    • H01J35/18Windows
    • H01J35/186Windows used as targets or X-ray converters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00X-ray tubes
    • H01J2235/06Cathode assembly
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00X-ray tubes
    • H01J2235/08Targets (anodes) and X-ray converters
    • H01J2235/086Target geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00X-ray tubes
    • H01J35/02Details
    • H01J35/04Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08Anodes; Anti cathodes
    • H01J35/112Non-rotating anodes
    • H01J35/116Transmissive anodes

Definitions

  • X-ray tubes can include an electron source, such as a filament, which can emit an electron beam into an evacuated chamber towards an anode target.
  • the electron beam causes the anode target material to emit elemental-specific, characteristic x-rays and Bremsstrahlung x-rays.
  • X-rays emitted from the anode target material can impinge upon a sample.
  • the sample can then emit elemental-specific x-rays.
  • These sample emitted x-rays can be received and analyzed. Because each material emits x-rays that are characteristic of the elements in the material, the elements in the sample material can be identified.
  • the characteristic x-rays emitted from both the target and the sample can include K-lines and L-lines for K and L electron orbital atomic transitions respectively.
  • the K- lines of a given element are higher in energy than the L-lines for that element.
  • the anode target L-line can be used for identification and quantification of the elements in the sample and it is desirable that the x-ray tube emit more of the target L-line x-rays and less K-line x-rays.
  • the energy of the electrons impinging the target can be reduced by changing the x-ray tube voltage, thus causing the target to emit more L-line x-rays and less or no K-line x-rays.
  • the x-ray tube can emit relatively more L-line x-rays and less K-line and Bremsstrahlung x-rays. If the electron energy, controlled by the tube voltage, is lower than the energy of the K-line of the target, the K-line will not be emitted.
  • the anode target K-line can be used for identification and quantification of the material in the sample and it is desirable that the x-ray tube emit more of the target K-line x-rays.
  • the x-ray tube voltage can be increased in order to cause the x-ray tube to emit relatively more K-line x-rays. Thus it is desirable to adjust the x-ray tube voltage depending on the material that is being analyzed.
  • the use of a single anode target for multiple x-ray tube voltages can result in non-optimal use of the electron beam.
  • a higher tube voltage can produce a higher energy electron beam.
  • a higher energy electron beam can penetrate deeper into an anode target material. If the target material is too thin, then some of the electrons pass through the anode target material. Electrons that pass through the target anode material do not result in x-ray production by the target material and the overall efficiency of the electron to x-ray conversion is reduced. This is detrimental to the analysis of the sample since a higher rate of x-ray production can improve the precision and accuracy of analysis and reduces the time of measurement.
  • a lower tube voltage can produce a lower energy electron beam.
  • a lower energy electron beam will not penetrate as deeply into the target material as will a higher energy beam. If the target material is too thick, then some of the x-rays produced will be absorbed by the target anode material. Target absorbed x-rays are not emitted towards the sample. This is another inefficient use of the electron beam.
  • the target material target is compromised at an intermediate thickness, then at low tube voltage, some target produced x-rays will be reabsorbed by the target material, but not as many as if the target material was optimized for high tube voltage. Also, at high tube voltage, some of the electron beam will pass through the target, but not as much as if the target material was optimized for low tube voltage. Thus there is a problem at both high and low tube voltages.
  • Multiple targets may be used for production of different wavelengths of x-rays. For example, see U.S. Patent Nos. 4,870,671 ; 4,007,375, and Japanese Patent Nos. JP 5- 135722 and JP 4-171700.
  • One target may be optimized for one tube voltage and another target may be optimized for a different tube voltage.
  • a problem with multiple targets can be that the x-rays emitted from one target can be directed to a different location than x- rays emitted from a different target. This can create problems for the user who may then need to realign the x-ray tube or tube optics each time a transition is made from one target to another target.
  • the need to realign the x-ray tube or tube optics may be overcome by use of a layered target, with each layer comprised of a different material.
  • a layered target with each layer comprised of a different material.
  • a problem with a layered target can be that an x-ray spectrum emitted from a layered target can contain energy lines originating from all target layers making the analysis more cumbersome and less precise.
  • X-rays emitted from multiple targets can be directed by optics towards the sample material.
  • optics For example, see U.S. Patent Publication No. 2007/0165780 and WIPO
  • the present invention is directed to a multiple wavelength x-ray source that satisfies the need for changing from one wavelength to another without x-ray tube alignment, without the need for additional optics to redirect the x-ray beam, and without loss of efficiency of the electron beam.
  • the apparatus comprises an x-ray source comprising an evacuated tube, an anode coupled to the tube, and a cathode opposing the anode and also coupled to the tube.
  • the anode includes a window with a target.
  • the target has a material configured to produce X-rays in response to impact of electrons.
  • the cathode includes an electron source configured to produce electrons which are accelerated towards the target in response to an electric field between the anode and the cathode, defining an electron beam.
  • the target has an outer region substantially circumscribing an inner region. Either the inner or the outer region is thicker than the other region. The inner region is disposed substantially at the center of a desired path of the electron beam.
  • FIG. 1 is a schematic cross-sectional side view of a multiple wavelength x-ray source in accordance with an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention
  • FIG. 3 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention.
  • FIG. 4 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention.
  • FIG. 5 is a schematic top view of a multiple thickness target in accordance with an embodiment of the present invention.
  • FIG. 6 is a schematic cross-sectional side view of the multiple thickness target of
  • FIG. 5 taken along line 6-6 in FIG. 5;
  • FIG. 7 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention.
  • FIG. 8 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention.
  • FIG. 9 is a schematic top view of a multiple thickness target in accordance with an embodiment of the present invention.
  • FIG. 10 is a schematic cross-sectional side view of the multiple thickness target of FIG. 9 taken along line 10-10 in FIG. 9;
  • FIG. 1 1 is a schematic top view of a cathode filament in accordance with an embodiment of the present invention
  • FIG. 12 is a schematic top view of a cathode filament in accordance with an embodiment of the present invention.
  • FIG. 13 is a schematic top view of a cathode filament and a laser beam intensity profile in accordance with an embodiment of the present invention
  • FIG. 14 is a schematic top view of a cathode filament and a laser beam intensity profile in accordance with an embodiment of the present invention
  • FIG. 15 is a schematic cross-sectional side view of a multiple wavelength x-ray source in accordance with an embodiment of the present invention
  • FIG. 16 is a schematic cross-sectional side view of a multiple wavelength x-ray source in accordance with an embodiment of the present invention.
  • FIG. 17 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention.
  • FIG. 18 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention. DETAILED DESCRIPTION
  • the multiple wavelength x-ray source 10, shown in FIG. 1 includes an evacuated tube 11, an anode 12 coupled to the tube, and a cathode 16, opposing the anode and also coupled to the tube 11.
  • the anode 12 includes an x-ray transparent window 13 and a target 14.
  • FIG. 1 shows the target 14 having a thickness that is similar to a thickness of the window 13, typically the window 13 is much thicker than the target 14.
  • a relatively thicker target 14 is shown in order to aid in showing features of the target, such as an inner region 15a of the target and an outer region of the target 15b, wherein one region is thicker than the other region, defining a thicker region and a thinner region.
  • the cathode 16 includes at least one electron source 17 which is configured to produce electrons accelerated towards the target 14, in response to an electric field between the anode 12 and the cathode 16, defining an electron beam.
  • the electron source 17 can be a filament.
  • the target 14 is comprised of a material configured to produce x-rays in response to impact of electrons.
  • the multiple wavelength x-ray source 10 also includes a means for expanding and narrowing an electron beam while maintaining a center or direction 18 of the electron beam in substantially the same location. As shown in FIG. 2, an electron beam 21 can be narrowed in order to impinge mostly upon the inner region 15a of the target 14. As shown in FIG. 3, the electron beam 21 can be expanded in order to impinge upon substantially the entire target region.
  • the area of the outer region can be significantly greater than the area of the inner region such that when the electron beam 21 is expanded to impinge upon the entire target region, only a small fraction of the electron beam 21 will actually impinge upon the inner region.
  • the electron beam can be significantly stronger in the outer region or perimeter of the electron beam and significantly weaker in the central region of the electron beam such that only a very minimal portion of the electron beam will impinge on the inner region 15a of the target when the electron beam is expanded.
  • the outer region 15b can substantially circumscribe the inner region 15a.
  • both the outer region and the inner region shown are circular in shape, the target can also be other shapes, such as oval, square, rectangular, triangle, polygonal, etc.
  • the inner region can have a thickness Tl that is different from a thickness T2 of the outer region. As shown in FIG. 6, the inner region can be thinner and the outer region can be thicker. Alternatively, as shown in FIG. 7, the target 14b can have the inner region be thicker and the outer region be thinner. As shown in FIG. 8, a target 14c can have more than two thicknesses. Although the target 14c in FIG.
  • a target may include more than the three different thicknesses shown in FIG. 8.
  • a target with more than two thicknesses can allow target thickness to be optimized at more than two tube voltages.
  • the inner region 15a of target 14d shown in FIGs. 9 and 10 is in the shape of a channel.
  • the thicker region 15b is disposed on both sides of the inner region 15a but does not necessarily circumscribe the inner region.
  • the electron beam can be narrowed to impinge primarily on the inner region 15a and expanded to impinge mostly on the outer region 15b of the target.
  • the inner region 15a of target 14d is thinner than the outer region 15b, the opposite configuration may be used in which the inner region 15a is thicker than the outer region 15b.
  • Target 14d may be beneficial if the region where the electron beam impinges on the target is more linear in shape rather than circular.
  • the electron beam can be narrowed to impinge primarily upon the inner region 15a when a lower voltage is applied between the anode 12 and the cathode 16.
  • the thickness Tl of the inner region 15a of the target 14 can be optimized for this lower voltage. This can result in a strong L-line x-ray output.
  • the electron beam can be expanded to impinge primarily upon the outer and thicker region 15b when a higher voltage is applied between the anode 12 and the cathode 16.
  • the thickness T2 of the outer region 15b of the target 14 can be optimized for this higher voltage. This can result in a strong K-line x-ray output.
  • the electron beam can be narrowed to impinge primarily upon the inner region 15a when a higher voltage is applied between the anode 12 and the cathode 16.
  • the thickness Tl of the inner region 15a of the target 14 can be optimized for this higher voltage. This can result in a strong K-line x-ray output.
  • the electron beam can be expanded to impinge primarily upon the outer and thinner region 15b when a lower voltage is applied between the anode 12 and the cathode 16.
  • the thickness T2 of the outer region 15b of the target 14 can be optimized for this lower voltage. This can result in a strong L-line x-ray output.
  • the means for expanding and narrowing the electron beam can be a magnet 20 as shown in FIG. 1.
  • the magnet 20 can be a permanent magnet.
  • the permanent magnet can cause the electron beam 21 to narrow when the permanent magnet is in close proximity to the anode.
  • the electron beam 21 can expand when the permanent magnet is moved away from the anode.
  • the magnet 20 can be an electromagnet.
  • the electromagnet can be annular and can surround the anode.
  • the electromagnet can include additional electron beam optics for further shaping the electron beam.
  • the electrical current through the electromagnet can be adjusted, or turned on or off, to cause the electron beam to narrow or expand.
  • the means for expanding and narrowing the electron beam, and the electron source 17, can be at least one cathode filament.
  • the filament can be res is tively heated or laser heated.
  • both filaments 1 10 of FIG. 11 and filament 120 of FIG. 12 can be used.
  • Filament 1 10 includes an outer region 11 1 and an empty inner region 1 12. Due to the shape of the filament 110, an electron beam emitted from this filament can impinge primarily on an outer portion of the target.
  • filament 1 10 is circular in shape, this filament could be other shapes depending on the shape of the outer region 15b of the target 14.
  • Filament 120 (of FIG. 12) can be placed in the empty inner region 1 12 of filament 1 10 (of FIG. 11). Filament 120 (FIG. 12) can emit an electron beam that is narrow and stronger in the center.
  • an electrical current can be passed through filament 120 when a lower voltage is applied between the cathode 15 and the anode 12, thus causing a narrow electron beam to impinge primarily on the inner, thinner portion 15a of the target 14a.
  • An electrical current can be passed through filament 1 10 when a higher voltage is applied between the cathode 15 and the anode 12, thus causing a wider electron beam to impinge primarily on the outer, thicker portion 15b of the target 14a.
  • a laser 19, shown in FIG. 1 can be used to selectively heat sections of a filament, such that the emitted electron beam can be more intense in the center or on the edges, corresponding to the desired section of the target.
  • the laser 19 in FIG. 1 is an optional addition to the embodiment shown in FIG. 1.
  • the electron source 17 in FIG. 1 can be a filament which may be resistively heated rather than laser heated. Laser heated cathodes are described in U.S. Patent 7,236,568, which is incorporated herein by reference.
  • the filament can be a planar filament. Planar filaments are described in U.S. Patent
  • filament 120 is shown in FIG. 13 along with a cross sectional laser beam intensity profile 130.
  • the laser beam profile 130 is most intense at an outer perimeter 131 of the laser beam and less intense at a center of the laser beam 132. This can result in a more intense laser beam heating the outer perimeter of the filament, causing an electron beam profile to be emitted from the filament 120 that is similar in shape to the laser beam profile - stronger at an outer perimeter and less intense at the center, thus the electron beam would impinge primarily upon outer region 15b of the target and less upon the center 15a of the target.
  • the laser beam can be more intense in the center 132 and less intense at the outer perimeter 131 as shown in laser beam intensity profile 140 of FIG. 14. This can result in a more intense laser beam heating the inner region of the filament 120, causing an electron beam profile to be emitted from the filament 120 that is similar in shape to the laser beam profile - stronger at the center and less intense at the outer perimeter, thus the electron beam would impinge primarily upon an inner region 15a of the anode target and less upon the outer region 15b of the anode target.
  • TEM00 transverse electromagnetic mode
  • the means for expanding and narrowing the electron beam can be electron beam optics combined with changes in tube voltage.
  • the electron beam optics can be designed so that the electron beam will be narrow when a lower voltage is applied across the tube and the electron beam expands when a higher voltage is applied across the tube.
  • the electron beam optics can be designed so that the electron beam will be narrow when a higher voltage is applied across the tube and the electron beam expands when a lower voltage is applied across the tube.
  • cathode optics 151 can cause the electron beam 21 to be narrow upon application of one voltage applied between the anode 12 and the cathode 16 and to expand upon application of a different voltage applied between the anode 12 and the cathode 16.
  • Targets 14e and 14f shown in FIGs. 17 and 18, have gradual transitions 171 between the thicker and thinner regions. All invention embodiments can have either abrupt or gradual transitions in target thickness.
  • a standard target for an x-ray tube may be patterned and etched to create at least one thinner region.
  • the target can be made of standard x-ray tube target materials, such as rhodium, tungsten, molybdenum, gold, silver, or copper, that can emit x-rays in response to an impinging electron beam.
  • the target material can be selected such that the L and / or K lines of the target have a higher energy, and relatively close in energy, to a K-line or an L-line in the sample.
  • the target can be made of a single material.
  • U.S. Patent application number 12/603,242 describes creating various shaped cavities by various patterning and etch procedures. Such procedures may be applicable in creating various shaped targets.
  • U.S. Patent application number 12/603,242 is incorporated herein by reference. It is to be understood that the above-referenced arrangements are only illustrative of the application for the principles of the present invention. Numerous modifications and alternative arrangements can be devised without departing from the spirit and scope of the present invention.

Abstract

A multiple wavelength x-ray source (10) includes a multi-thickness target (14, 14b, 14c, 14d), having at least a first and a second thickness (T2, Tl). The first thickness can substantially circumscribe the second thickness. An electron beam (21) can be narrowed to impinge primarily upon second thickness or expanded to impinge primarily upon the first thickness while maintaining a constant direction of the beam. This invention allows the target thickness to be optimized for the desired output wavelength without the need to redirect or realign the x-rays towards the target.

Description

Multiple Wavelength X-Ray Source
BACKGROUND
X-ray tubes can include an electron source, such as a filament, which can emit an electron beam into an evacuated chamber towards an anode target. The electron beam causes the anode target material to emit elemental-specific, characteristic x-rays and Bremsstrahlung x-rays. X-rays emitted from the anode target material can impinge upon a sample. The sample can then emit elemental-specific x-rays. These sample emitted x-rays can be received and analyzed. Because each material emits x-rays that are characteristic of the elements in the material, the elements in the sample material can be identified.
The characteristic x-rays emitted from both the target and the sample can include K-lines and L-lines for K and L electron orbital atomic transitions respectively. The K- lines of a given element are higher in energy than the L-lines for that element. For quantification of the amount of an element in the sample, it is important that a K-line or an L-line in the anode target have a higher energy than a K-line or an L-line in the sample. It is also desirable for the K-line or the L-line in the anode target to have an energy relatively close to the K-line or L-line in the sample, in order to maximize the K- line or L-line x-ray signal from the sample, thus improving the accuracy and precision of analysis.
If an L-line from the x-ray tube's anode target is higher than and close to the energy of a K-line or L-line in the sample, then the anode target L-line can be used for identification and quantification of the elements in the sample and it is desirable that the x-ray tube emit more of the target L-line x-rays and less K-line x-rays. The energy of the electrons impinging the target can be reduced by changing the x-ray tube voltage, thus causing the target to emit more L-line x-rays and less or no K-line x-rays. Thus the x-ray tube can emit relatively more L-line x-rays and less K-line and Bremsstrahlung x-rays. If the electron energy, controlled by the tube voltage, is lower than the energy of the K-line of the target, the K-line will not be emitted.
If a K-line from the x-ray tube's anode target is higher and close to the energy of a K-line or L-line in the sample, then the anode target K-line can be used for identification and quantification of the material in the sample and it is desirable that the x-ray tube emit more of the target K-line x-rays. The x-ray tube voltage can be increased in order to cause the x-ray tube to emit relatively more K-line x-rays. Thus it is desirable to adjust the x-ray tube voltage depending on the material that is being analyzed.
In a transmission x-ray tube, the use of a single anode target for multiple x-ray tube voltages can result in non-optimal use of the electron beam. A higher tube voltage can produce a higher energy electron beam. A higher energy electron beam can penetrate deeper into an anode target material. If the target material is too thin, then some of the electrons pass through the anode target material. Electrons that pass through the target anode material do not result in x-ray production by the target material and the overall efficiency of the electron to x-ray conversion is reduced. This is detrimental to the analysis of the sample since a higher rate of x-ray production can improve the precision and accuracy of analysis and reduces the time of measurement.
A lower tube voltage can produce a lower energy electron beam. A lower energy electron beam will not penetrate as deeply into the target material as will a higher energy beam. If the target material is too thick, then some of the x-rays produced will be absorbed by the target anode material. Target absorbed x-rays are not emitted towards the sample. This is another inefficient use of the electron beam.
Inefficient use of the electron beam to create the desired x-rays is undesirable because a longer sampling time is then required for material analysis than if all the electrons were used for production of target emitted x-rays. Thus if the target anode material is optimized for use at high x-ray tube voltages, then when used at low x-ray tube voltages, some of the target x-rays will be absorbed by the target material. If the target material is optimized for use at low x-ray tube voltages, then when used at high x- ray tube voltages, some of the electron beam will pass through the target material without production of x-rays.
If the target material target is compromised at an intermediate thickness, then at low tube voltage, some target produced x-rays will be reabsorbed by the target material, but not as many as if the target material was optimized for high tube voltage. Also, at high tube voltage, some of the electron beam will pass through the target, but not as much as if the target material was optimized for low tube voltage. Thus there is a problem at both high and low tube voltages.
Multiple targets may be used for production of different wavelengths of x-rays. For example, see U.S. Patent Nos. 4,870,671 ; 4,007,375, and Japanese Patent Nos. JP 5- 135722 and JP 4-171700. One target may be optimized for one tube voltage and another target may be optimized for a different tube voltage. A problem with multiple targets can be that the x-rays emitted from one target can be directed to a different location than x- rays emitted from a different target. This can create problems for the user who may then need to realign the x-ray tube or tube optics each time a transition is made from one target to another target.
The need to realign the x-ray tube or tube optics may be overcome by use of a layered target, with each layer comprised of a different material. For example, see U.S. Patent No. 7,203,283. A problem with a layered target can be that an x-ray spectrum emitted from a layered target can contain energy lines originating from all target layers making the analysis more cumbersome and less precise.
X-rays emitted from multiple targets can be directed by optics towards the sample material. For example, see U.S. Patent Publication No. 2007/0165780 and WIPO
Publication No. WO 2008/052002. Additional optics can have the disadvantage of increased complexity and cost.
SUMMARY
It has been recognized that it would be advantageous to develop an x-ray source that optimally uses the electron beam when changing from one x-ray wavelength to another. It has also been recognized that it would be advantageous to develop an x-ray source that avoids the need to realign the x-ray tube or use optics to redirect the electron beam when changing from one x-ray wavelength to another.
The present invention is directed to a multiple wavelength x-ray source that satisfies the need for changing from one wavelength to another without x-ray tube alignment, without the need for additional optics to redirect the x-ray beam, and without loss of efficiency of the electron beam. The apparatus comprises an x-ray source comprising an evacuated tube, an anode coupled to the tube, and a cathode opposing the anode and also coupled to the tube. The anode includes a window with a target. The target has a material configured to produce X-rays in response to impact of electrons. The cathode includes an electron source configured to produce electrons which are accelerated towards the target in response to an electric field between the anode and the cathode, defining an electron beam. The target has an outer region substantially circumscribing an inner region. Either the inner or the outer region is thicker than the other region. The inner region is disposed substantially at the center of a desired path of the electron beam.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional side view of a multiple wavelength x-ray source in accordance with an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention;
FIG. 5 is a schematic top view of a multiple thickness target in accordance with an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional side view of the multiple thickness target of
FIG. 5 taken along line 6-6 in FIG. 5;
FIG. 7 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention;
FIG. 9 is a schematic top view of a multiple thickness target in accordance with an embodiment of the present invention;
FIG. 10 is a schematic cross-sectional side view of the multiple thickness target of FIG. 9 taken along line 10-10 in FIG. 9;
FIG. 1 1 is a schematic top view of a cathode filament in accordance with an embodiment of the present invention;
FIG. 12 is a schematic top view of a cathode filament in accordance with an embodiment of the present invention;
FIG. 13 is a schematic top view of a cathode filament and a laser beam intensity profile in accordance with an embodiment of the present invention;
FIG. 14 is a schematic top view of a cathode filament and a laser beam intensity profile in accordance with an embodiment of the present invention; FIG. 15 is a schematic cross-sectional side view of a multiple wavelength x-ray source in accordance with an embodiment of the present invention;
FIG. 16 is a schematic cross-sectional side view of a multiple wavelength x-ray source in accordance with an embodiment of the present invention;
FIG. 17 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention;
FIG. 18 is a schematic cross-sectional side view of a multiple thickness target in accordance with an embodiment of the present invention; DETAILED DESCRIPTION
Reference will now be made to the exemplary embodiments illustrated in the drawings, and specific language will be used herein to describe the same. It will nevertheless be understood that no limitation of the scope of the invention is thereby intended. Alterations and further modifications of the inventive features illustrated herein, and additional applications of the principles of the inventions as illustrated herein, which would occur to one skilled in the relevant art and having possession of this disclosure, are to be considered within the scope of the invention.
The multiple wavelength x-ray source 10, shown in FIG. 1 includes an evacuated tube 11, an anode 12 coupled to the tube, and a cathode 16, opposing the anode and also coupled to the tube 11. The anode 12 includes an x-ray transparent window 13 and a target 14. Although FIG. 1 shows the target 14 having a thickness that is similar to a thickness of the window 13, typically the window 13 is much thicker than the target 14. A relatively thicker target 14 is shown in order to aid in showing features of the target, such as an inner region 15a of the target and an outer region of the target 15b, wherein one region is thicker than the other region, defining a thicker region and a thinner region. The cathode 16 includes at least one electron source 17 which is configured to produce electrons accelerated towards the target 14, in response to an electric field between the anode 12 and the cathode 16, defining an electron beam. The electron source 17 can be a filament. The target 14 is comprised of a material configured to produce x-rays in response to impact of electrons. The multiple wavelength x-ray source 10 also includes a means for expanding and narrowing an electron beam while maintaining a center or direction 18 of the electron beam in substantially the same location. As shown in FIG. 2, an electron beam 21 can be narrowed in order to impinge mostly upon the inner region 15a of the target 14. As shown in FIG. 3, the electron beam 21 can be expanded in order to impinge upon substantially the entire target region. The area of the outer region can be significantly greater than the area of the inner region such that when the electron beam 21 is expanded to impinge upon the entire target region, only a small fraction of the electron beam 21 will actually impinge upon the inner region. As shown in FIG. 4, depending on the means selected for expanding the electron beam 21 , the electron beam can be significantly stronger in the outer region or perimeter of the electron beam and significantly weaker in the central region of the electron beam such that only a very minimal portion of the electron beam will impinge on the inner region 15a of the target when the electron beam is expanded.
As shown in FIGs. 5 and 6, the outer region 15b can substantially circumscribe the inner region 15a. Although both the outer region and the inner region shown are circular in shape, the target can also be other shapes, such as oval, square, rectangular, triangle, polygonal, etc. The inner region can have a thickness Tl that is different from a thickness T2 of the outer region. As shown in FIG. 6, the inner region can be thinner and the outer region can be thicker. Alternatively, as shown in FIG. 7, the target 14b can have the inner region be thicker and the outer region be thinner. As shown in FIG. 8, a target 14c can have more than two thicknesses. Although the target 14c in FIG. 8 is thickest in the outermost region 15c, thinner in the next inner adjacent region 15b, and thinnest in the innermost region 15a, alternative arrangements of thicknesses may be utilized, such as having the thinner region as the outermost region 15c and the thickest region as the innermost region 15a. A target may include more than the three different thicknesses shown in FIG. 8. A target with more than two thicknesses can allow target thickness to be optimized at more than two tube voltages.
The inner region 15a of target 14d, shown in FIGs. 9 and 10 is in the shape of a channel. The thicker region 15b is disposed on both sides of the inner region 15a but does not necessarily circumscribe the inner region. The electron beam can be narrowed to impinge primarily on the inner region 15a and expanded to impinge mostly on the outer region 15b of the target. Although the inner region 15a of target 14d is thinner than the outer region 15b, the opposite configuration may be used in which the inner region 15a is thicker than the outer region 15b. Also, there could be more than two thicknesses of target material, as was described previously regarding target 14c. Target 14d may be beneficial if the region where the electron beam impinges on the target is more linear in shape rather than circular.
In the embodiments previously described, if the inner region 15a is thinner, then the electron beam can be narrowed to impinge primarily upon the inner region 15a when a lower voltage is applied between the anode 12 and the cathode 16. The thickness Tl of the inner region 15a of the target 14 can be optimized for this lower voltage. This can result in a strong L-line x-ray output. The electron beam can be expanded to impinge primarily upon the outer and thicker region 15b when a higher voltage is applied between the anode 12 and the cathode 16. The thickness T2 of the outer region 15b of the target 14 can be optimized for this higher voltage. This can result in a strong K-line x-ray output.
Alternatively, if the inner region 15a is thicker, then the electron beam can be narrowed to impinge primarily upon the inner region 15a when a higher voltage is applied between the anode 12 and the cathode 16. The thickness Tl of the inner region 15a of the target 14 can be optimized for this higher voltage. This can result in a strong K-line x-ray output. The electron beam can be expanded to impinge primarily upon the outer and thinner region 15b when a lower voltage is applied between the anode 12 and the cathode 16. The thickness T2 of the outer region 15b of the target 14 can be optimized for this lower voltage. This can result in a strong L-line x-ray output.
MEANS FOR EXPANDING AND NARROWING THE ELECTRON BEAM
The means for expanding and narrowing the electron beam can be a magnet 20 as shown in FIG. 1. The magnet 20 can be a permanent magnet. The permanent magnet can cause the electron beam 21 to narrow when the permanent magnet is in close proximity to the anode. The electron beam 21 can expand when the permanent magnet is moved away from the anode.
The magnet 20 can be an electromagnet. The electromagnet can be annular and can surround the anode. For example, see U.S. Patent 7,428,298 which is incorporated herein by reference. The electromagnet can include additional electron beam optics for further shaping the electron beam. The electrical current through the electromagnet can be adjusted, or turned on or off, to cause the electron beam to narrow or expand.
The means for expanding and narrowing the electron beam, and the electron source 17, can be at least one cathode filament. The filament can be res is tively heated or laser heated. For example, both filaments 1 10 of FIG. 11 and filament 120 of FIG. 12 can be used. Filament 1 10 includes an outer region 11 1 and an empty inner region 1 12. Due to the shape of the filament 110, an electron beam emitted from this filament can impinge primarily on an outer portion of the target. Although filament 1 10 is circular in shape, this filament could be other shapes depending on the shape of the outer region 15b of the target 14. Filament 120 (of FIG. 12) can be placed in the empty inner region 1 12 of filament 1 10 (of FIG. 11). Filament 120 (FIG. 12) can emit an electron beam that is narrow and stronger in the center.
For example, if target 14a of FIGs. 5 and 6 is used with filaments 1 10 and 120 (FIGs. 11 and 12), an electrical current can be passed through filament 120 when a lower voltage is applied between the cathode 15 and the anode 12, thus causing a narrow electron beam to impinge primarily on the inner, thinner portion 15a of the target 14a. An electrical current can be passed through filament 1 10 when a higher voltage is applied between the cathode 15 and the anode 12, thus causing a wider electron beam to impinge primarily on the outer, thicker portion 15b of the target 14a.
A laser 19, shown in FIG. 1 , can be used to selectively heat sections of a filament, such that the emitted electron beam can be more intense in the center or on the edges, corresponding to the desired section of the target. The laser 19 in FIG. 1 is an optional addition to the embodiment shown in FIG. 1. The electron source 17 in FIG. 1 can be a filament which may be resistively heated rather than laser heated. Laser heated cathodes are described in U.S. Patent 7,236,568, which is incorporated herein by reference. The filament can be a planar filament. Planar filaments are described in U.S. Patent
Application Number 12/407,457, which is incorporated herein by reference. For example, filament 120 is shown in FIG. 13 along with a cross sectional laser beam intensity profile 130. The laser beam profile 130 is most intense at an outer perimeter 131 of the laser beam and less intense at a center of the laser beam 132. This can result in a more intense laser beam heating the outer perimeter of the filament, causing an electron beam profile to be emitted from the filament 120 that is similar in shape to the laser beam profile - stronger at an outer perimeter and less intense at the center, thus the electron beam would impinge primarily upon outer region 15b of the target and less upon the center 15a of the target.
By changing the laser beam to a different transverse electromagnetic mode, such as TEM00, the laser beam can be more intense in the center 132 and less intense at the outer perimeter 131 as shown in laser beam intensity profile 140 of FIG. 14. This can result in a more intense laser beam heating the inner region of the filament 120, causing an electron beam profile to be emitted from the filament 120 that is similar in shape to the laser beam profile - stronger at the center and less intense at the outer perimeter, thus the electron beam would impinge primarily upon an inner region 15a of the anode target and less upon the outer region 15b of the anode target.
The means for expanding and narrowing the electron beam can be electron beam optics combined with changes in tube voltage. The electron beam optics can be designed so that the electron beam will be narrow when a lower voltage is applied across the tube and the electron beam expands when a higher voltage is applied across the tube.
Alternatively, the electron beam optics can be designed so that the electron beam will be narrow when a higher voltage is applied across the tube and the electron beam expands when a lower voltage is applied across the tube. For example, shown in FIGs. 15 and 16, cathode optics 151 can cause the electron beam 21 to be narrow upon application of one voltage applied between the anode 12 and the cathode 16 and to expand upon application of a different voltage applied between the anode 12 and the cathode 16.
The targets shown previously have abrupt changes between the thicker and thinner regions. Targets 14e and 14f, shown in FIGs. 17 and 18, have gradual transitions 171 between the thicker and thinner regions. All invention embodiments can have either abrupt or gradual transitions in target thickness.
HOW TO MAKE
A standard target for an x-ray tube may be patterned and etched to create at least one thinner region. The target can be made of standard x-ray tube target materials, such as rhodium, tungsten, molybdenum, gold, silver, or copper, that can emit x-rays in response to an impinging electron beam. The target material can be selected such that the L and / or K lines of the target have a higher energy, and relatively close in energy, to a K-line or an L-line in the sample. The target can be made of a single material.
Various target shaped regions, with abrupt or gradual changes in thickness can be created by various patterning and isotropic etch and anisotropic etch procedures. U.S. Patent application number 12/603,242 describes creating various shaped cavities by various patterning and etch procedures. Such procedures may be applicable in creating various shaped targets. U.S. Patent application number 12/603,242 is incorporated herein by reference. It is to be understood that the above-referenced arrangements are only illustrative of the application for the principles of the present invention. Numerous modifications and alternative arrangements can be devised without departing from the spirit and scope of the present invention. While the present invention has been shown in the drawings and fully described above with particularity and detail in connection with what is presently deemed to be the most practical and preferred embodiment(s) of the invention, it will be apparent to those of ordinary skill in the art that numerous modifications can be made without departing from the principles and concepts of the invention as set forth herein.

Claims

What is claimed is: 1. An x-ray source device, comprising:
a) an evacuated tube;
b) an anode coupled to the tube and including a window and a target; c) the target having a material configured to produce x-rays in response to impact of electrons;
d) a cathode coupled to the tube opposing the anode and including at least one electron source configured to produce electrons accelerated towards the target in response to an electric field between the anode and the cathode, defining an electron beam;
e) the target having an outer region and an inner region, with one of the regions being thicker than the other region defining a thicker region and a thinner region; and
f) means for expanding and narrowing the electron beam while maintaining a center of the electron beam in substantially the same location. 2. A device as in claim 1, wherein:
a) the thicker region of the target is the outer region and the thinner region of the target is the inner region; and
b) the means for expanding and narrowing the electron beam:
i) narrows the electron beam to impinge mostly upon the thinner and inner region of the target when a lower voltage is applied across the cathode and the anode; and
ii) expands the electron beam to impinge upon the thicker and outer region of the target when a higher voltage is applied across the cathode and the anode.
3. A device as in claim 1, wherein:
a) the thinner region of the target is the outer region and the thicker region of the target is the inner region; and
b) the means for expanding and narrowing the electron beam: i) narrows the electron beam to impinge mostly upon the thicker and inner region of the target when a higher voltage is applied across the cathode and the anode; and
ii) expands the electron beam to impinge upon the thinner and outer region of the target when a lower voltage is applied across the cathode and the anode.
4. A device as in claim 1, wherein the means for expanding and narrowing the electron beam comprises:
a) a first filament adapted for projecting an electron beam that is stronger on an outer perimeter of the beam than at a center of the beam; and b) a second filament adapted for projecting an electron beam that is stronger in a center of the beam than at an outer perimeter of the beam.
5. A device as in claim 1, wherein the means for expanding and narrowing the electron beam comprises electron beam optics. 6. A device as in claim 1, wherein the means for expanding and narrowing the electron beam comprises:
a) at least one electromagnet, associated with the tube, and adapted for affecting the electron beam;
b) the at least one electromagnet causing the electron beam to narrow in response to an increased electrical current through the at least one electromagnet; and
c) the at least one electromagnet causing the electron beam to expand in response to a decreased electrical current through the at least one electromagnet.
7. A device as in claim 1, wherein the means for directing the electron beam comprises:
a) a planar filament; b) at least one laser adapted for heating the planar filament in order to cause the planar filament to emit electrons;
c) the at least one laser being adapted to direct a laser beam towards the filament that is stronger in a center of the laser beam than at a perimeter of the laser beam to form a narrower electron beam; and
d) the at least one laser being adapted to direct another laser beam towards the filament that is weaker in a center of the laser beam than at the perimeter of the laser beam to form an electron beam that is stronger at an outer perimeter of the electron beam than at a center of the electron beam.
An x-ray source device, comprising:
a) an evacuated tube;
b) an anode coupled to the tube and including a window and a target; c) the target having a material configured to produce x-rays in response to impact of electrons;
d) a cathode coupled to the tube opposing the anode and including at least one electron source configured to produce electrons accelerated towards the target in response to an electric field between the anode and the cathode, defining an electron beam; and
e) the target having an outer region and an inner region, with one of the inner or outer regions being thicker than the other of the inner or outer regions defining a thicker region and a thinner region; and the inner region is disposed substantially at the center of a desired path of the electron beam. A device as in claim 8, wherein:
a) the inner region of the target is the thinner region and the outer region of the target is the thicker region;
b) the device further comprises:
i) electron beam optics to expand the electron beam wider when a higher voltage is applied between the cathode and the anode than when a lower voltage is applied between the cathode and the anode such that a majority of the electron beam impinges on the outer and thicker region of the target; and ii) electron beam optics to narrow the electron beam when a lower voltage is applied between the cathode and the anode than when a higher voltage is applied the cathode and the anode such that a majority of the electron beam impinges on the inner and thinner region of the target.
10. A method of producing multiple wavelengths of x-rays from a single target, the method comprising:
a) narrowing an electron beam to impinge primarily upon a central portion of the target for producing mostly x-rays of a first wavelength; and
b) expanding the electron beam to impinge primarily upon an outer portion of the target for producing mostly x-rays of a second wavelength.
PCT/US2010/056011 2009-12-17 2010-11-09 Multiple wavelength x-ray source WO2011084232A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/640,154 US7983394B2 (en) 2009-12-17 2009-12-17 Multiple wavelength X-ray source
US12/640,154 2009-12-17

Publications (2)

Publication Number Publication Date
WO2011084232A2 true WO2011084232A2 (en) 2011-07-14
WO2011084232A3 WO2011084232A3 (en) 2011-09-09

Family

ID=44151120

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/056011 WO2011084232A2 (en) 2009-12-17 2010-11-09 Multiple wavelength x-ray source

Country Status (2)

Country Link
US (1) US7983394B2 (en)
WO (1) WO2011084232A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8247971B1 (en) 2009-03-19 2012-08-21 Moxtek, Inc. Resistively heated small planar filament
DE102010020151A1 (en) * 2010-05-11 2011-11-17 Siemens Aktiengesellschaft Thermionic flat emitter and associated method for operating an X-ray tube
US8406378B2 (en) 2010-08-25 2013-03-26 Gamc Biotech Development Co., Ltd. Thick targets for transmission x-ray tubes
US8526574B2 (en) 2010-09-24 2013-09-03 Moxtek, Inc. Capacitor AC power coupling across high DC voltage differential
US8831179B2 (en) 2011-04-21 2014-09-09 Carl Zeiss X-ray Microscopy, Inc. X-ray source with selective beam repositioning
US9076628B2 (en) 2011-05-16 2015-07-07 Brigham Young University Variable radius taper x-ray window support structure
US9174412B2 (en) 2011-05-16 2015-11-03 Brigham Young University High strength carbon fiber composite wafers for microfabrication
US8761344B2 (en) 2011-12-29 2014-06-24 Moxtek, Inc. Small x-ray tube with electron beam control optics
WO2014044316A1 (en) * 2012-09-21 2014-03-27 Siemens Aktiengesellschaft Device having an anode for generating x-radiation
US9072154B2 (en) 2012-12-21 2015-06-30 Moxtek, Inc. Grid voltage generation for x-ray tube
US9620324B2 (en) * 2013-02-14 2017-04-11 Golden Engineering, Inc. X-ray tube
US9184020B2 (en) 2013-03-04 2015-11-10 Moxtek, Inc. Tiltable or deflectable anode x-ray tube
US9177755B2 (en) 2013-03-04 2015-11-03 Moxtek, Inc. Multi-target X-ray tube with stationary electron beam position
US9173623B2 (en) 2013-04-19 2015-11-03 Samuel Soonho Lee X-ray tube and receiver inside mouth
US9666322B2 (en) 2014-02-23 2017-05-30 Bruker Jv Israel Ltd X-ray source assembly
US9748070B1 (en) * 2014-09-17 2017-08-29 Bruker Jv Israel Ltd. X-ray tube anode
JP6685670B2 (en) * 2015-08-31 2020-04-22 キヤノン株式会社 X-ray generation tube, X-ray generation device, X-ray imaging system, and X-ray generation device adjustment method
JP6918595B2 (en) * 2017-06-22 2021-08-11 キヤノン電子管デバイス株式会社 Fixed anode type X-ray tube
CN109211101B (en) * 2018-10-11 2023-09-22 中国科学院电工研究所 Electron beam centering detection tube and electron beam centering detection device
KR102278305B1 (en) * 2018-10-22 2021-07-19 캐논 아네르바 가부시키가이샤 X-ray generator and X-ray imaging system
US11302508B2 (en) 2018-11-08 2022-04-12 Bruker Technologies Ltd. X-ray tube
US20220230833A1 (en) * 2021-01-20 2022-07-21 Moxtek, Inc. Target Features to Increase X-Ray Flux
WO2023188338A1 (en) * 2022-03-31 2023-10-05 キヤノンアネルバ株式会社 X-ray generation device, target adjusting method, and method for using x-ray generation device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891831A (en) * 1987-07-24 1990-01-02 Hitachi, Ltd. X-ray tube and method for generating X-rays in the X-ray tube
US5422926A (en) * 1990-09-05 1995-06-06 Photoelectron Corporation X-ray source with shaped radiation pattern
JP2003007237A (en) * 2001-06-25 2003-01-10 Shimadzu Corp X-ray generator
US7305066B2 (en) * 2002-07-19 2007-12-04 Shimadzu Corporation X-ray generating equipment

Family Cites Families (218)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1276706A (en) 1918-04-30 1918-08-27 Gurdy L Aydelotte Land-torpedo.
US1881448A (en) 1928-08-15 1932-10-11 Formell Corp Ltd X-ray method and means
US1946288A (en) 1929-09-19 1934-02-06 Gen Electric Electron discharge device
US2291948A (en) 1940-06-27 1942-08-04 Westinghouse Electric & Mfg Co High voltage X-ray tube shield
US2316214A (en) 1940-09-10 1943-04-13 Gen Electric X Ray Corp Control of electron flow
US2329318A (en) 1941-09-08 1943-09-14 Gen Electric X Ray Corp X-ray generator
US2340363A (en) 1942-03-03 1944-02-01 Gen Electric X Ray Corp Control for focal spot in X-ray generators
US2502070A (en) 1949-01-19 1950-03-28 Dunlee Corp Getter for induction flashing
DE1030936B (en) 1952-01-11 1958-05-29 Licentia Gmbh Vacuum-tight radiation window made of beryllium for discharge vessels
US2683223A (en) 1952-07-24 1954-07-06 Licentia Gmbh X-ray tube
US2952790A (en) 1957-07-15 1960-09-13 Raytheon Co X-ray tubes
US3218559A (en) 1961-11-09 1965-11-16 Gen Electric Synchronizing circuit maintaining loop signals as an integer product and equal amplitude
US3356559A (en) 1963-07-01 1967-12-05 University Patents Inc Colored fiber metal structures and method of making the same
US3434062A (en) 1965-06-21 1969-03-18 James R Cox Drift detector
US3397337A (en) 1966-01-14 1968-08-13 Ion Physics Corp Flash X-ray dielectric wall structure
US3851266A (en) 1967-07-27 1974-11-26 P Conway Signal conditioner and bit synchronizer
US3619690A (en) 1967-12-28 1971-11-09 Matsushita Electric Ind Co Ltd Thin window cathode-ray tube
US3538368A (en) 1968-01-02 1970-11-03 Hughes Aircraft Co Electron gun structure employing a unitary cylinder housing
US3828190A (en) 1969-01-17 1974-08-06 Measurex Corp Detector assembly
US3691417A (en) 1969-09-02 1972-09-12 Watkins Johnson Co X-ray generating assembly and system
US3741797A (en) 1970-04-30 1973-06-26 Gen Technology Corp Low density high-strength boron on beryllium reinforcement filaments
US3679927A (en) 1970-08-17 1972-07-25 Machlett Lab Inc High power x-ray tube
US3665236A (en) 1970-12-09 1972-05-23 Atomic Energy Commission Electrode structure for controlling electron flow with high transmission efficiency
US3751701A (en) 1971-03-08 1973-08-07 Watkins Johnson Co Convergent flow hollow beam x-ray gun with high average power
NL7110516A (en) 1971-07-30 1973-02-01
DE2154888A1 (en) * 1971-11-04 1973-05-17 Siemens Ag ROENTINE PIPE
US3970884A (en) 1973-07-09 1976-07-20 Golden John P Portable X-ray device
US3894219A (en) 1974-01-16 1975-07-08 Westinghouse Electric Corp Hybrid analog and digital comb filter for clutter cancellation
US3882339A (en) * 1974-06-17 1975-05-06 Gen Electric Gridded X-ray tube gun
US3962583A (en) 1974-12-30 1976-06-08 The Machlett Laboratories, Incorporated X-ray tube focusing means
US4007375A (en) 1975-07-14 1977-02-08 Albert Richard D Multi-target X-ray source
FR2333344A1 (en) * 1975-11-28 1977-06-24 Radiologie Cie Gle HOT CATHODE RADIOGENIC TUBE WITH END ANODE AND APPARATUS INCLUDING SUCH A TUBE
US4160311A (en) 1976-01-16 1979-07-10 U.S. Philips Corporation Method of manufacturing a cathode ray tube for displaying colored pictures
US4184097A (en) 1977-02-25 1980-01-15 Magnaflux Corporation Internally shielded X-ray tube
GB1588669A (en) 1978-05-30 1981-04-29 Standard Telephones Cables Ltd Silicon transducer
US4178509A (en) 1978-06-02 1979-12-11 The Bendix Corporation Sensitivity proportional counter window
US4368538A (en) 1980-04-11 1983-01-11 International Business Machines Corporation Spot focus flash X-ray source
DE3032492A1 (en) 1980-08-28 1982-04-01 Siemens AG, 1000 Berlin und 8000 München ELECTRICAL NETWORK AND METHOD FOR THE PRODUCTION THEREOF
DE3070833D1 (en) 1980-09-19 1985-08-08 Ibm Deutschland Structure with a silicon body that presents an aperture and method of making this structure
US4421986A (en) 1980-11-21 1983-12-20 The United States Of America As Represented By The Department Of Health And Human Services Nuclear pulse discriminator
US4576679A (en) 1981-03-27 1986-03-18 Honeywell Inc. Method of fabricating a cold shield
US4443293A (en) 1981-04-20 1984-04-17 Kulite Semiconductor Products, Inc. Method of fabricating transducer structure employing vertically walled diaphragms with quasi rectangular active areas
DE3222511C2 (en) 1982-06-16 1985-08-29 Feinfocus Röntgensysteme GmbH, 3050 Wunstorf Fine focus X-ray tube
JPS59128281A (en) 1982-12-29 1984-07-24 信越化学工業株式会社 Manufacture of silicon carbide coated matter
US4521902A (en) 1983-07-05 1985-06-04 Ridge, Inc. Microfocus X-ray system
CH654686A5 (en) 1983-11-18 1986-02-28 Centre Electron Horloger METHOD FOR MANUFACTURING A DEVICE WITH MINIATURE SHUTTERS AND APPLICATION OF SUCH A METHOD FOR OBTAINING A DEVICE FOR MODULATING LIGHT.
US4608326A (en) 1984-02-13 1986-08-26 Hewlett-Packard Company Silicon carbide film for X-ray masks and vacuum windows
US4688241A (en) * 1984-03-26 1987-08-18 Ridge, Inc. Microfocus X-ray system
US4679219A (en) 1984-06-15 1987-07-07 Kabushiki Kaisha Toshiba X-ray tube
US4645977A (en) 1984-08-31 1987-02-24 Matsushita Electric Industrial Co., Ltd. Plasma CVD apparatus and method for forming a diamond like carbon film
US4696994A (en) 1984-12-14 1987-09-29 Ube Industries, Ltd. Transparent aromatic polyimide
FR2577073B1 (en) 1985-02-06 1987-09-25 Commissariat Energie Atomique MATRIX DEVICE FOR DETECTION OF LIGHT RADIATION WITH INDIVIDUAL COLD SCREENS INTEGRATED IN A SUBSTRATE AND MANUFACTURING METHOD THEREOF
US4591756A (en) 1985-02-25 1986-05-27 Energy Sciences, Inc. High power window and support structure for electron beam processors
GB2174399B (en) 1985-03-10 1988-05-18 Nitto Electric Ind Co Colorless transparent polyimide shaped articles and their production
JPH0617474B2 (en) 1985-05-31 1994-03-09 チッソ株式会社 Method for producing highly adhesive silicon-containing polyamic acid
JPS6224543A (en) 1985-07-24 1987-02-02 Toshiba Corp X-ray tube apparatus
DE3542127A1 (en) 1985-11-28 1987-06-04 Siemens Ag X-RAY EMITTER
US4705540A (en) 1986-04-17 1987-11-10 E. I. Du Pont De Nemours And Company Polyimide gas separation membranes
US4979198A (en) 1986-05-15 1990-12-18 Malcolm David H Method for production of fluoroscopic and radiographic x-ray images and hand held diagnostic apparatus incorporating the same
GB2192751B (en) 1986-07-14 1991-02-13 Denki Kagaku Kogyo Kk Method of making a thermionic cathode structure.
US4862490A (en) 1986-10-23 1989-08-29 Hewlett-Packard Company Vacuum windows for soft x-ray machines
NL8603264A (en) * 1986-12-23 1988-07-18 Philips Nv ROENTGEN TUBE WITH A RING-SHAPED FOCUS.
US4931531A (en) 1987-07-02 1990-06-05 Mitsui Toatsu Chemicals, Incorporated Polyimide and high-temperature adhesive thereof
US4797907A (en) 1987-08-07 1989-01-10 Diasonics Inc. Battery enhanced power generation for mobile X-ray machine
US4885055A (en) 1987-08-21 1989-12-05 Brigham Young University Layered devices having surface curvature and method of constructing same
JPH0749482B2 (en) 1988-02-26 1995-05-31 チッソ株式会社 Method for producing silicon-containing polyimide having low hygroscopicity and high adhesiveness and its precursor
US5066300A (en) 1988-05-02 1991-11-19 Nu-Tech Industries, Inc. Twin replacement heart
US4933557A (en) 1988-06-06 1990-06-12 Brigham Young University Radiation detector window structure and method of manufacturing thereof
US4960486A (en) 1988-06-06 1990-10-02 Brigham Young University Method of manufacturing radiation detector window structure
US4939763A (en) 1988-10-03 1990-07-03 Crystallume Method for preparing diamond X-ray transmissive elements
US5432003A (en) 1988-10-03 1995-07-11 Crystallume Continuous thin diamond film and method for making same
JPH02199099A (en) 1988-10-21 1990-08-07 Crystallume Thin-film made of continuous diamond and making thereof
US4870671A (en) 1988-10-25 1989-09-26 X-Ray Technologies, Inc. Multitarget x-ray tube
US5105456A (en) 1988-11-23 1992-04-14 Imatron, Inc. High duty-cycle x-ray tube
US5343112A (en) 1989-01-18 1994-08-30 Balzers Aktiengesellschaft Cathode arrangement
US4957773A (en) 1989-02-13 1990-09-18 Syracuse University Deposition of boron-containing films from decaborane
US5077771A (en) 1989-03-01 1991-12-31 Kevex X-Ray Inc. Hand held high power pulsed precision x-ray source
US5117829A (en) 1989-03-31 1992-06-02 Loma Linda University Medical Center Patient alignment system and procedure for radiation treatment
US5302523A (en) 1989-06-21 1994-04-12 Zeneca Limited Transformation of plant cells
JP2886588B2 (en) * 1989-07-11 1999-04-26 日本碍子株式会社 Piezoelectric / electrostrictive actuator
US5010562A (en) 1989-08-31 1991-04-23 Siemens Medical Laboratories, Inc. Apparatus and method for inhibiting the generation of excessive radiation
US4979199A (en) 1989-10-31 1990-12-18 General Electric Company Microfocus X-ray tube with optical spot size sensing means
US5217817A (en) 1989-11-08 1993-06-08 U.S. Philips Corporation Steel tool provided with a boron layer
US5161179A (en) 1990-03-01 1992-11-03 Yamaha Corporation Beryllium window incorporated in X-ray radiation system and process of fabrication thereof
US5063324A (en) 1990-03-29 1991-11-05 Itt Corporation Dispenser cathode with emitting surface parallel to ion flow
US5077777A (en) 1990-07-02 1991-12-31 Micro Focus Imaging Corp. Microfocus X-ray tube
US5153900A (en) 1990-09-05 1992-10-06 Photoelectron Corporation Miniaturized low power x-ray source
US5258091A (en) 1990-09-18 1993-11-02 Sumitomo Electric Industries, Ltd. Method of producing X-ray window
JP3026284B2 (en) 1990-09-18 2000-03-27 住友電気工業株式会社 X-ray window material and method of manufacturing the same
US5090043A (en) 1990-11-21 1992-02-18 Parker Micro-Tubes, Inc. X-ray micro-tube and method of use in radiation oncology
US5178140A (en) 1991-09-05 1993-01-12 Telectronics Pacing Systems, Inc. Implantable medical devices employing capacitive control of high voltage switches
GB9200828D0 (en) 1992-01-15 1992-03-11 Image Research Ltd Improvements in and relating to material identification using x-rays
US5226067A (en) 1992-03-06 1993-07-06 Brigham Young University Coating for preventing corrosion to beryllium x-ray windows and method of preparing
US5165093A (en) 1992-03-23 1992-11-17 The Titan Corporation Interstitial X-ray needle
US5267294A (en) 1992-04-22 1993-11-30 Hitachi Medical Corporation Radiotherapy apparatus
FI93680C (en) 1992-05-07 1995-05-10 Outokumpu Instr Oy Support construction for thin film and process for making it
US5651047A (en) 1993-01-25 1997-07-22 Cardiac Mariners, Incorporated Maneuverable and locateable catheters
US5682412A (en) 1993-04-05 1997-10-28 Cardiac Mariners, Incorporated X-ray source
US5478266A (en) 1993-04-12 1995-12-26 Charged Injection Corporation Beam window devices and methods of making same
US5391958A (en) 1993-04-12 1995-02-21 Charged Injection Corporation Electron beam window devices and methods of making same
US5521851A (en) 1993-04-26 1996-05-28 Nihon Kohden Corporation Noise reduction method and apparatus
US5469429A (en) 1993-05-21 1995-11-21 Kabushiki Kaisha Toshiba X-ray CT apparatus having focal spot position detection means for the X-ray tube and focal spot position adjusting means
US5627871A (en) * 1993-06-10 1997-05-06 Nanodynamics, Inc. X-ray tube and microelectronics alignment process
US5392042A (en) 1993-08-05 1995-02-21 Martin Marietta Corporation Sigma-delta analog-to-digital converter with filtration having controlled pole-zero locations, and apparatus therefor
US5400385A (en) 1993-09-02 1995-03-21 General Electric Company High voltage power supply for an X-ray tube
US5442677A (en) 1993-10-26 1995-08-15 Golden; John Cold-cathode x-ray emitter and tube therefor
WO1995012926A1 (en) 1993-11-05 1995-05-11 Ntt Mobile Communications Network Inc. Replica producing adaptive demodulating method and demodulator using the same
JP2927966B2 (en) 1994-07-12 1999-07-28 フォトエレクトロン コーポレイション X-ray apparatus for applying a predetermined flux to the inner layer surface of a body cavity
DE4430623C2 (en) 1994-08-29 1998-07-02 Siemens Ag X-ray image intensifier
JP3170673B2 (en) 1994-11-15 2001-05-28 株式会社テイエルブイ Liquid pumping device
US5680433A (en) * 1995-04-28 1997-10-21 Varian Associates, Inc. High output stationary X-ray target with flexible support structure
US5571616A (en) 1995-05-16 1996-11-05 Crystallume Ultrasmooth adherent diamond film coated article and method for making same
US5774522A (en) 1995-08-14 1998-06-30 Warburton; William K. Method and apparatus for digitally based high speed x-ray spectrometer for direct coupled use with continuous discharge preamplifiers
US5870051A (en) 1995-08-14 1999-02-09 William K. Warburton Method and apparatus for analog signal conditioner for high speed, digital x-ray spectrometer
EP0847249A4 (en) 1995-08-24 2004-09-29 Medtronic Ave Inc X-ray catheter
DE19536247C2 (en) 1995-09-28 1999-02-04 Siemens Ag X-ray tube
US5729583A (en) 1995-09-29 1998-03-17 The United States Of America As Represented By The Secretary Of Commerce Miniature x-ray source
US5631943A (en) 1995-12-19 1997-05-20 Miles; Dale A. Portable X-ray device
JP3594716B2 (en) 1995-12-25 2004-12-02 浜松ホトニクス株式会社 Transmission X-ray tube
US6002202A (en) 1996-07-19 1999-12-14 The Regents Of The University Of California Rigid thin windows for vacuum applications
GB9620160D0 (en) 1996-09-27 1996-11-13 Bede Scient Instr Ltd X-ray generator
DE19639920C2 (en) 1996-09-27 1999-08-26 Siemens Ag X-ray tube with variable focus
US6205200B1 (en) 1996-10-28 2001-03-20 The United States Of America As Represented By The Secretary Of The Navy Mobile X-ray unit
JP3854680B2 (en) 1997-02-26 2006-12-06 キヤノン株式会社 Pressure partition and exposure apparatus using the same
US6683783B1 (en) 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
US5898754A (en) 1997-06-13 1999-04-27 X-Ray And Specialty Instruments, Inc. Method and apparatus for making a demountable x-ray tube
US5907595A (en) 1997-08-18 1999-05-25 General Electric Company Emitter-cup cathode for high-emission x-ray tube
US6075839A (en) 1997-09-02 2000-06-13 Varian Medical Systems, Inc. Air cooled end-window metal-ceramic X-ray tube for lower power XRF applications
US6129901A (en) 1997-11-18 2000-10-10 Martin Moskovits Controlled synthesis and metal-filling of aligned carbon nanotubes
JP4043571B2 (en) 1997-12-04 2008-02-06 浜松ホトニクス株式会社 X-ray tube
US6005918A (en) 1997-12-19 1999-12-21 Picker International, Inc. X-ray tube window heat shield
US6184333B1 (en) 1998-01-16 2001-02-06 Maverick Corporation Low-toxicity, high-temperature polyimides
US5939521A (en) 1998-01-23 1999-08-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Polyimides based on 4,4'-bis (4-aminophenoxy)-2,2'or 2,2', 6,6'-substituted biphenyl
JP3902883B2 (en) 1998-03-27 2007-04-11 キヤノン株式会社 Nanostructure and manufacturing method thereof
DE19818057A1 (en) 1998-04-22 1999-11-04 Siemens Ag X-ray image intensifier manufacture method
DE59800215D1 (en) 1998-06-05 2000-08-31 Lummel Wolfgang Microinjection method for introducing an injection substance, in particular foreign genetic material, into prokaryotic and eukaryotic cells, as well as cell compartments of the latter (plastids, cell nuclei), as well as nanopipettes for this
US6133401A (en) 1998-06-29 2000-10-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method to prepare processable polyimides with reactive endgroups using 1,3-bis (3-aminophenoxy) benzene
JP4334639B2 (en) 1998-07-30 2009-09-30 浜松ホトニクス株式会社 X-ray tube
US6134300A (en) 1998-11-05 2000-10-17 The Regents Of The University Of California Miniature x-ray source
US6232706B1 (en) 1998-11-12 2001-05-15 The Board Of Trustees Of The Leland Stanford Junior University Self-oriented bundles of carbon nanotubes and method of making same
FR2789401B1 (en) 1999-02-08 2003-04-04 Cis Bio Int METHOD FOR MANUFACTURING LIGAND DIES ADDRESSED ON A MEDIUM
JP2000306533A (en) * 1999-02-19 2000-11-02 Toshiba Corp Transmissive radiation-type x-ray tube and manufacture of it
JP4026976B2 (en) 1999-03-02 2007-12-26 浜松ホトニクス株式会社 X-ray generator, X-ray imaging apparatus, and X-ray inspection system
US6289079B1 (en) 1999-03-23 2001-09-11 Medtronic Ave, Inc. X-ray device and deposition process for manufacture
GB9906886D0 (en) 1999-03-26 1999-05-19 Bede Scient Instr Ltd Method and apparatus for prolonging the life of an X-ray target
US6277318B1 (en) 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
US6062931A (en) 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
US6438207B1 (en) 1999-09-14 2002-08-20 Varian Medical Systems, Inc. X-ray tube having improved focal spot control
AUPQ304199A0 (en) 1999-09-23 1999-10-21 Commonwealth Scientific And Industrial Research Organisation Patterned carbon nanotubes
US6361208B1 (en) 1999-11-26 2002-03-26 Varian Medical Systems Mammography x-ray tube having an integral housing assembly
DE10008121B4 (en) 2000-02-22 2006-03-09 Saehan Micronics Inc. Process for the preparation of polyamic acid and polyimide and adhesive or adhesive consisting of the polyamic acid or polyimide thus prepared
US6307008B1 (en) 2000-02-25 2001-10-23 Saehan Industries Corporation Polyimide for high temperature adhesive
US6388359B1 (en) 2000-03-03 2002-05-14 Optical Coating Laboratory, Inc. Method of actuating MEMS switches
US6976953B1 (en) 2000-03-30 2005-12-20 The Board Of Trustees Of The Leland Stanford Junior University Maintaining the alignment of electric and magnetic fields in an x-ray tube operated in a magnetic field
GB0008051D0 (en) 2000-04-03 2000-05-24 De Beers Ind Diamond Composite diamond window
DE10038176C1 (en) 2000-08-04 2001-08-16 Siemens Ag Medical examination system with an MR system and an X-ray system
US6494618B1 (en) 2000-08-15 2002-12-17 Varian Medical Systems, Inc. High voltage receptacle for x-ray tubes
DE10048833C2 (en) 2000-09-29 2002-08-08 Siemens Ag Vacuum housing for a vacuum tube with an X-ray window
US6876724B2 (en) 2000-10-06 2005-04-05 The University Of North Carolina - Chapel Hill Large-area individually addressable multi-beam x-ray system and method of forming same
US6546077B2 (en) 2001-01-17 2003-04-08 Medtronic Ave, Inc. Miniature X-ray device and method of its manufacture
US6645757B1 (en) 2001-02-08 2003-11-11 Sandia Corporation Apparatus and method for transforming living cells
US20020176984A1 (en) 2001-03-26 2002-11-28 Wilson Smart Silicon penetration device with increased fracture toughness and method of fabrication
DE10120335C2 (en) 2001-04-26 2003-08-07 Bruker Daltonik Gmbh Ion mobility spectrometer with non-radioactive ion source
JP4772212B2 (en) 2001-05-31 2011-09-14 浜松ホトニクス株式会社 X-ray generator
US20020191746A1 (en) 2001-06-19 2002-12-19 Mark Dinsmore X-ray source for materials analysis systems
DE10135995C2 (en) 2001-07-24 2003-10-30 Siemens Ag Directly heated thermionic flat emitter
US6661876B2 (en) 2001-07-30 2003-12-09 Moxtek, Inc. Mobile miniature X-ray source
TW200303742A (en) 2001-11-21 2003-09-16 Novartis Ag Organic compounds
JP4231228B2 (en) 2002-01-21 2009-02-25 株式会社リコー Micromachine
AU2003214929B2 (en) * 2002-01-31 2006-07-13 The Johns Hopkins University X-ray source and method for producing selectable x-ray wavelength
US20030152700A1 (en) 2002-02-11 2003-08-14 Board Of Trustees Operating Michigan State University Process for synthesizing uniform nanocrystalline films
EP1483427A1 (en) 2002-02-11 2004-12-08 Rensselaer Polytechnic Institute Directed assembly of highly-organized carbon nanotube architectures
US7448801B2 (en) 2002-02-20 2008-11-11 Inpho, Inc. Integrated X-ray source module
US7448802B2 (en) 2002-02-20 2008-11-11 Newton Scientific, Inc. Integrated X-ray source module
WO2003086028A1 (en) 2002-04-05 2003-10-16 Hamamatsu Photonics K.K. X-ray tube control apparatus and x-ray tube control method
JP2005539351A (en) 2002-09-13 2005-12-22 モックステック・インコーポレーテッド Radiation window and manufacturing method thereof
JP2004265602A (en) 2003-01-10 2004-09-24 Toshiba Corp X-ray apparatus
JP2004265606A (en) 2003-01-21 2004-09-24 Toshiba Corp X-ray tube device
US6819741B2 (en) 2003-03-03 2004-11-16 Varian Medical Systems Inc. Apparatus and method for shaping high voltage potentials on an insulator
US6987835B2 (en) 2003-03-26 2006-01-17 Xoft Microtube, Inc. Miniature x-ray tube with micro cathode
JP4530991B2 (en) 2003-04-11 2010-08-25 独立行政法人理化学研究所 Microinjection method and apparatus
US6803570B1 (en) 2003-07-11 2004-10-12 Charles E. Bryson, III Electron transmissive window usable with high pressure electron spectrometry
DE10335527A1 (en) 2003-07-31 2005-02-17 Sms Demag Ag Device for removing bearing unit from roll neck of supporting roller of mill stand comprises nut fixed to roll neck to be supported on bearing unit
DE602004022229D1 (en) 2003-09-12 2009-09-10 Canon Kk Image reader and imaging system using X-rays
US7075699B2 (en) 2003-09-29 2006-07-11 The Regents Of The University Of California Double hidden flexure microactuator for phase mirror array
JP3863554B2 (en) 2004-01-07 2006-12-27 松下電器産業株式会社 Incandescent bulb and filament for incandescent bulb
US7224769B2 (en) 2004-02-20 2007-05-29 Aribex, Inc. Digital x-ray camera
US7130380B2 (en) 2004-03-13 2006-10-31 Xoft, Inc. Extractor cup on a miniature x-ray tube
JP2005276760A (en) 2004-03-26 2005-10-06 Shimadzu Corp X-ray generating device
WO2005112103A2 (en) 2004-05-07 2005-11-24 Stillwater Scientific Instruments Microfabricated miniature grids
US7902627B2 (en) 2004-06-03 2011-03-08 Silicon Laboratories Inc. Capacitive isolation circuitry with improved common mode detector
US8198951B2 (en) 2004-06-03 2012-06-12 Silicon Laboratories Inc. Capacitive isolation circuitry
US7233071B2 (en) 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
US7680652B2 (en) 2004-10-26 2010-03-16 Qnx Software Systems (Wavemakers), Inc. Periodic signal enhancement system
US7428298B2 (en) * 2005-03-31 2008-09-23 Moxtek, Inc. Magnetic head for X-ray source
JP2006297549A (en) 2005-04-21 2006-11-02 Keio Gijuku Method for arranged vapor deposition of metal nanoparticle and method for growing carbon nanotube using metal nanoparticle
US7486774B2 (en) 2005-05-25 2009-02-03 Varian Medical Systems, Inc. Removable aperture cooling structure for an X-ray tube
US7382862B2 (en) 2005-09-30 2008-06-03 Moxtek, Inc. X-ray tube cathode with reduced unintended electrical field emission
US7618906B2 (en) 2005-11-17 2009-11-17 Oxford Instruments Analytical Oy Window membrane for detector and analyser devices, and a method for manufacturing a window membrane
US7650050B2 (en) 2005-12-08 2010-01-19 Alstom Technology Ltd. Optical sensor device for local analysis of a combustion process in a combustor of a thermal power plant
WO2007076458A1 (en) 2005-12-21 2007-07-05 Primegen Biotech Llc Microinjector chip
US7317784B2 (en) 2006-01-19 2008-01-08 Broker Axs, Inc. Multiple wavelength X-ray source
US7657002B2 (en) 2006-01-31 2010-02-02 Varian Medical Systems, Inc. Cathode head having filament protection features
US7203283B1 (en) 2006-02-21 2007-04-10 Oxford Instruments Analytical Oy X-ray tube of the end window type, and an X-ray fluorescence analyzer
ATE525740T1 (en) 2006-05-11 2011-10-15 Koninkl Philips Electronics Nv EMITTER DESIGN THAT ALLOWS AN EMERGENCY OPERATION MODE IN CASE OF EMMITTER DAMAGE, FOR USE IN MEDICAL X-RAY TECHNOLOGY
US8815346B2 (en) 2006-10-13 2014-08-26 Samsung Electronics Co., Ltd. Compliant and nonplanar nanostructure films
US7634052B2 (en) 2006-10-24 2009-12-15 Thermo Niton Analyzers Llc Two-stage x-ray concentrator
JP4504344B2 (en) * 2006-12-04 2010-07-14 国立大学法人 東京大学 X-ray source
US8257932B2 (en) 2007-02-21 2012-09-04 The Regents Of The University Of California Interfacing nanostructures to biological cells
US7737424B2 (en) 2007-06-01 2010-06-15 Moxtek, Inc. X-ray window with grid structure
US7709820B2 (en) 2007-06-01 2010-05-04 Moxtek, Inc. Radiation window with coated silicon support structure
US20080296479A1 (en) 2007-06-01 2008-12-04 Anderson Eric C Polymer X-Ray Window with Diamond Support Structure
KR20100037615A (en) 2007-07-09 2010-04-09 브라이엄 영 유니버시티 Methods and devices for charged molecule manipulation
US7529345B2 (en) 2007-07-18 2009-05-05 Moxtek, Inc. Cathode header optic for x-ray tube
EP2190778A4 (en) 2007-09-28 2014-08-13 Univ Brigham Young Carbon nanotube assembly
US7756251B2 (en) 2007-09-28 2010-07-13 Brigham Young Univers ity X-ray radiation window with carbon nanotube frame
US7675444B1 (en) 2008-09-23 2010-03-09 Maxim Integrated Products, Inc. High voltage isolation by capacitive coupling
US20100239828A1 (en) 2009-03-19 2010-09-23 Cornaby Sterling W Resistively heated small planar filament

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891831A (en) * 1987-07-24 1990-01-02 Hitachi, Ltd. X-ray tube and method for generating X-rays in the X-ray tube
US5422926A (en) * 1990-09-05 1995-06-06 Photoelectron Corporation X-ray source with shaped radiation pattern
JP2003007237A (en) * 2001-06-25 2003-01-10 Shimadzu Corp X-ray generator
US7305066B2 (en) * 2002-07-19 2007-12-04 Shimadzu Corporation X-ray generating equipment

Also Published As

Publication number Publication date
WO2011084232A3 (en) 2011-09-09
US7983394B2 (en) 2011-07-19
US20110150184A1 (en) 2011-06-23

Similar Documents

Publication Publication Date Title
US7983394B2 (en) Multiple wavelength X-ray source
US9916961B2 (en) X-ray tube having magnetic quadrupoles for focusing and steering
US10431414B2 (en) Composite target and X-ray tube with the composite target
EP3113686B1 (en) X-ray generator
EP0432568A2 (en) X ray tube anode and tube having same
JP2004063471A (en) Cathode for x-ray tube of high emission
US20120307974A1 (en) X-ray tube and radiation imaging apparatus
WO2013136299A1 (en) Devices having an electron emitting structure
US8344727B2 (en) Directed energy imaging system
US7768181B2 (en) Electron multiplier electrode and terahertz radiation source using the same
JP2007520048A (en) Parallel plate electron multiplier with suppressed ion feedback
JP2011171251A (en) Multi-micro hollow cathode light source and atomic absorption spectrometer
US20140029730A1 (en) Tensioned flat electron emitter tape
US20140146947A1 (en) Channeling x-rays
KR102312207B1 (en) X-ray source and apparatus including the same
JP4533588B2 (en) Klystron equipment
WO2020262239A1 (en) Photo-cathode for a vacuum system
Abolmasov et al. Cold-cathode Penning discharge-based ionizer for detection of hyperthermal neutral beams
JP2009123706A (en) Curved mcp channels
US3628084A (en) Coupled cavity slow wave circuit and tube using same
Lee et al. Design and construction of a far-infrared free-electron laser driven by a microtron
US9728370B2 (en) Focusing structures with non-rectilinear focusing apertures
TWM302049U (en) Array-type X-ray light source exposure apparatus
JP2001229863A (en) Micro-focus type x-ray tube apparatus
Pogorelsky Accelerator test facility sets new standard in relativistic thomson scattering

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10842414

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10842414

Country of ref document: EP

Kind code of ref document: A2