WO2011060595A1 - Pixel array - Google Patents

Pixel array Download PDF

Info

Publication number
WO2011060595A1
WO2011060595A1 PCT/CN2009/075749 CN2009075749W WO2011060595A1 WO 2011060595 A1 WO2011060595 A1 WO 2011060595A1 CN 2009075749 W CN2009075749 W CN 2009075749W WO 2011060595 A1 WO2011060595 A1 WO 2011060595A1
Authority
WO
WIPO (PCT)
Prior art keywords
pixel
transistor
pixel array
sub
pixels
Prior art date
Application number
PCT/CN2009/075749
Other languages
French (fr)
Chinese (zh)
Inventor
柳智忠
Original Assignee
深超光电(深圳)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深超光电(深圳)有限公司 filed Critical 深超光电(深圳)有限公司
Priority to US12/868,710 priority Critical patent/US8018399B2/en
Publication of WO2011060595A1 publication Critical patent/WO2011060595A1/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134345Subdivided pixels, e.g. for grey scale or redundancy
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0421Structural details of the set of electrodes
    • G09G2300/0426Layout of electrodes and connections
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0439Pixel structures

Definitions

  • the present invention relates to a display array, and more particularly to a pixel array. ⁇ Background technique ⁇
  • a flat panel display mainly consists of a display panel and a plurality of driving chips.
  • Driver IC is constructed in which the display panel has an array of pixels, and the pixels in the pixel array are driven by corresponding scan lines and corresponding data lines.
  • the industry is doing a lot of work to reduce costs.
  • a data design of a data source chip half-source driver has been proposed, which mainly uses the pixel array. Layout to reduce the amount of data driven chip usage.
  • FIG. 1A is a schematic diagram of a conventional pixel array.
  • two scan lines 120a are located between two adjacent columns of pixels 130a, 130b, wherein the gates of the active elements 140, 150 in the two pixels 130a, 130b
  • the poles 142, 152 are respectively located on both sides of the scanning line 120a.
  • the gates 142, 152 of the active devices 140, 150 and the sources 144, 154, 145, 156 of the active devices 140, 150 are in different masks. Process made.
  • the relative displacement between the gates 142, 152 of the active elements 140, 150 and the sources 144, 154, the drains 146, 156 may cause The characteristics of the active components 140, 150 deviate from the original design values.
  • the gate electrodes 142 and 152 are disposed on both sides of the corresponding scan line 120a, when the gates 142 and 152 of the active elements 140 and 150 are relatively displaced from the drain electrodes 146 and 156, the active elements in the pixels 130a and 130b are disposed.
  • the overlapping areas of the gates 142, 152 and the drains 146, 156 of 140, 150 are all different.
  • the gate-drain parasitic of the pixel 130a on the side of the scan line 120a is parasitic.
  • the capacitance Cgd parasititic capacitance, Cgd
  • the gate-drain parasitic capacitance Cgd becomes smaller, resulting in a difference in the gate-drain parasitic capacitance Cgd in the pixels 130a, 130b.
  • the difference in gate-drain parasitic capacitance Cgd caused by the above-mentioned process error is large, and therefore, the pixel array 100a is liable to cause display brightness unevenness during display.
  • the pixel array 100b has a plurality of irregularly arranged pixels R, G, B and scan lines 110b and data lines 120b connected to the pixels 1, G, B, respectively.
  • the scanning line 110b extends straight along the column direction
  • the data line 120b extends straight in the row direction and the scanning lines 110b intersect perpendicularly.
  • the design of the pixel array reduces the aperture ratio, which causes the brightness to be insufficient and the display quality to be poor when applied to the display.
  • the present invention provides a pixel array which can reduce the difference in gate-drain parasitic capacitance and thus contribute to improvement in display quality.
  • the present invention provides a pixel array including a plurality of scan lines, a plurality of data lines, and a plurality of pixels.
  • the scan lines extend in a zigzag direction along the column direction.
  • the data lines extend in the row direction and intersect the scan lines.
  • the pixels are connected to the scan lines and the data lines, and each pixel arranged in the column includes a first sub-pixel and a second sub-pixel.
  • the first sub-pixel includes a first transistor and a first pixel electrode, wherein a first gate of the first transistor is connected to the ⁇ scan line, and a first drain and a first pixel of the first transistor Electrode connection.
  • the second sub-pixel includes a second transistor and a second pixel electrode, wherein a second gate of the second transistor is connected to the “scanning line, and a second drain of the second transistor is connected to the second pixel.
  • a first source of the first transistor and a second source of the second transistor are connected to the same data line in the data line.
  • the layout patterns of the first transistor and the second transistor are convex upwards based on the corresponding scan lines.
  • the layout pattern of the first transistor and the second transistor is a pattern that protrudes downward based on a corresponding scan line.
  • the first transistor and the second transistor are located on the same side of the column of pixels.
  • the three sides of each of the first pixel electrodes or each of the second pixel electrodes are surrounded by a corresponding one of the scan lines.
  • each of the scan lines has a waveform on the pixel array.
  • each of the scan lines includes a plurality of first wires and a plurality of second wires. The first wire extends in the column direction. The second wire extends in the row direction. The first wire is alternately connected to the second wire.
  • the portion of the second wire is covered by one of the first pixel electrode or the second pixel electrode.
  • the second wire is located between the first sub-pixel and the second sub-pixel in the same pixel and between two adjacent pixels.
  • the length of each of the first wires is substantially greater than or equal to the width of one of the pixel electrodes, and the length of each of the second wires is substantially greater than or equal to the length of one of the pixel electrodes.
  • each of the scan lines further includes a plurality of first branches and a plurality of second branches.
  • the first branch connects the portion of the first wire and extends in the row direction.
  • the second branch connects a portion of the first wire and extends in the row direction.
  • the first branch and the second branch are substantially parallel to the second wire.
  • the portion of the first branch and the portion of the second branch located in the same pixel are covered by the second pixel electrode.
  • the pixels connected to the same data line are distributed on the strip. Both sides of the data line.
  • a part of the pixels located in the even rows are connected to one of the scanning lines, and a part of the pixels located in the odd rows are connected to the other scanning line.
  • the first transistor and the second transistor respectively have a first channel layer and a second channel layer, and the first channel layer is located in the first + Above the scan line, the second channel layer is above the “Scan Line”.
  • the first drain is connected to the first pixel electrode from the first channel layer along a first direction
  • the second drain is connected to the second pixel electrode from the second channel layer along a second direction
  • the first direction is The second direction is the same.
  • the line connecting the center points of the first and second sub-pixels approaches the same straight line.
  • the shape of the first transistor and the shape of the second transistor are in the form of a mirror image on the basis of the data line.
  • the first sub-pixel further includes a first capacitor electrode electrically connected to the first pixel electrode, and the first capacitor electrode and the data line belong to the same film layer and partially overlap the previous scan line.
  • the second sub-pixel further includes a second capacitor electrode electrically connected to the second pixel electrode, and the second capacitor electrode and the data line are in the same film layer and partially overlap with the previous scan line to form a second storage capacitor.
  • the pixel array of the present invention designs the scan lines in a zigzag layout manner, and the first sub-pixels and the second sub-pixels connected to the same data line are disposed on both sides of the data line.
  • the first gate of the first transistor located in the same pixel is connected to the (n+1)th scan line
  • the second gate of the second transistor is connected to the nth scan line. Therefore, the design of the pixel array of the present invention can greatly reduce the number of layouts of the data lines, thereby reducing the manufacturing cost, and effectively increasing the aperture ratio to significantly improve the brightness of the screen display, and can also improve the color performance of the display.
  • the gate-drain parasitic power in the entire pixel is obtained when there is a registration deviation between the layers on the transistor.
  • the difference in capacitance (Cgd) is small. In this way, when the pixel array of the present invention is applied to a display, it helps to improve the display uniformity of the display, thereby avoiding the problem of unevenness of brightness caused by flicker.
  • 1A is a schematic diagram of a conventional pixel array.
  • FIG. 1B is a schematic diagram of another conventional pixel array.
  • FIG. 2A is a schematic diagram of a pixel array in accordance with an embodiment of the present invention.
  • FIG. 2B is a schematic diagram of a scan line of the pixel array of FIG. 2A.
  • 2C is a schematic diagram of a pixel array in accordance with another embodiment of the present invention.
  • 2D is a schematic diagram of a pixel array according to still another embodiment of the present invention.
  • 3A is a schematic diagram of a pixel array in accordance with an embodiment of the present invention.
  • Fig. 3B is a schematic cross-sectional view taken along line A-A of Fig. 3A, and line B-B.
  • FIG. 3C is a schematic diagram of a pixel array according to another embodiment of the present invention.
  • the pixel array 200a includes a plurality of scan lines 210, a plurality of data lines 220, and a plurality of pixels 230.
  • the pixel array 200a has a column direction L1 and a row direction L2, and the column direction L1 is substantially orthogonal to the "" direction L2.
  • the scan line 210 of the present embodiment extends substantially in a meandering manner along the column direction L1, and for convenience of description, the scan line 210 will be composed of a plurality of first scan lines 210a and a plurality of strips.
  • the configuration of the second scanning line 210b will be described as an example.
  • the scanning lines 210 extend macroscopically in parallel with each other in the column direction L1.
  • the scanning lines 210 extend substantially in a single waveform on the substrate.
  • each of the first scan lines 210a includes a plurality of first wires 212, a plurality of second wires 214, a plurality of first branches 216, and a plurality of Second branch 218.
  • the first wire 212 extends substantially along the column direction L1
  • the second wire 214 extends substantially along the row direction L2.
  • the first wire 212 and the second wire 214 are alternately connected such that the first scan line 210a is substantially square.
  • the first scan line 210a may also have a sawtooth shape or an S-shaped shape.
  • the first branch 216 connects a portion of the first wire 212 and extends substantially along the row direction L2.
  • the second branch 218 connects a portion of the first wire 212 and extends along the row direction L2.
  • the first branch 216 and the second branch 218 are substantially parallel to the second wire 214, and the first scan line 210a is connected to a first branch 216 and a first segment on each of the first wires 212 adjacent to the second scan line 210b.
  • the two branches 218 are such that the first branch 216 of the first scan line 210a and the second wire 214 of the second scan line 210b are substantially on both sides of the data line. Therefore, each sub-pixel adjacent to the data line can further achieve the effect of avoiding lateral light leakage through the first branch 216 and the second branch 218.
  • the data line 220 in this embodiment extends substantially along the row direction L2 and intersects the first scan line 210a and the second scan line 210b to define a plurality of pixel regions.
  • the data line 220 intersects with the first scan line 210a and the second scan line 210b but is not electrically connected.
  • Each of the pixels 230 in the pixel array 200a is connected to the corresponding first scan line 210a, the second scan line 210b, and the data line 220, and each pixel 230 arranged in the nth column includes a first sub-pixel 310 and a first Two sub-pixels 320.
  • the first sub-pixel 310 includes a first transistor 312 and a first pixel electrode 314.
  • the first transistor 312 has a first channel layer 312a, a first gate 312b, a first drain 312c, and a first source. Pole 312d.
  • the first channel layer 312a is located above the (n+1)th scan line 210 (ie, the second scan line 210b), and the first gate 312b and the (n+1)th scan line 210 (ie, the second scan) Line 210b) is connected.
  • the first drain 3 12c is connected to the first pixel electrode 314, and the first drain 3 12c is connected to the first pixel electrode 314 from the first channel layer 312a along a first direction D1, that is, the first pixel electrode 3 14 corresponds to the (n+1)th scan line 210 (i.e., the second scan line 210b).
  • the three sides of the first pixel electrode 314 are surrounded by the corresponding previous scan line 210 (i.e., the first scan line 210a).
  • the second sub-pixel 320 includes a second transistor 322 and a second pixel electrode 324, wherein the second transistor 322 has a second channel layer 322a, a second gate 322b, and a second drain 322c.
  • the second channel layer 322a is located above the nth scan line 210 (i.e., the first scan line 210a), and the second gate 322b is connected to the nth scan line 210 (i.e., the first scan line 210a).
  • the second drain 322c is connected to the second pixel electrode 324, and the second drain 322c is connected to the second pixel electrode 324 from the second channel layer 322a along a second direction D2, that is, the second pixel electrode 324 corresponds to the nth A scan line 210 (ie, the first scan line 210a).
  • the first direction D1 is the same as the second direction D2. That is, the first direction D 1 is substantially parallel to the second direction D2.
  • the three sides of the second pixel electrode 324 are surrounded by corresponding corresponding upper scan lines (not shown).
  • the layout patterns of the first transistor 312 and the second transistor 322 are in a shape that protrudes upward corresponding to the reference of the second scan line 210b and the first scan line 210a, respectively. Therefore, in this embodiment, The pixels of the n columns are located in the area surrounded by the nth scan line 210, and are located in the first sub-pixel 310 and the second sub-pixel 320 of the nth column, and the first gate 3 12b and the (n+ l )th scan
  • the line 210 i.e., the second scan line 210b
  • the second gate 322b is connected to the nth scan line 210 (i.e., the first scan line 210a), in other words, the scan connected to the first gate 312b.
  • the line 210 is the next one of the scan lines 210 connected to the second gate 322b, and since n is an arbitrary positive integer, those skilled in the art may also refer to the first gate 3 12b being connected to the nth scan line 210.
  • the second gate 322b is connected to the (n-1)th scanning line 210, and the present invention is not limited thereto.
  • the layout of the pixel array 200b, the first transistor 312, and the second transistor 322 may be corresponding to the second scan line 210b.
  • the first gate 312b' is connected to the nth scan line 210, and the second gate The pole 322b is connected to the (n-1)th scan line 210.
  • the scan line 210 connected to the first gate 312b is also the scan line 210 connected to the second gate 322b'.
  • n is an arbitrary positive integer, those skilled in the art may also refer to the first gate 312b being connected to the nth scan line 210, and the second gate 322b and the (n+1)th scan.
  • the line 210 is connected, and the present invention is not limited thereto.
  • the directional terminology used is for the purpose of illustration and not limitation.
  • the layout patterns of the first transistor 312 and the second transistor 322 can be obtained to correspond to the reference directions of the second scan line 210b and the first scan line 210a, respectively.
  • the shape of the lower bulge please refer to Figure 2D.
  • the first source 312d of the first transistor 312 and the second source 322d of the second transistor 322 are connected to the same data line 220a in the data line 220.
  • the second wire 214 is located between the first sub-pixel 310 and the second sub-pixel 320 in the same pixel 230 and between the adjacent two pixels 230 .
  • the length of each of the first wires 212 is substantially greater than or equal to the width of the first pixel electrode 314 (or the second pixel electrode 324), and the length of each of the second wires 214 is substantially equal to or greater than the first pixel electrode 314 (or The length of the second pixel electrode 324).
  • the data line 220a of the embodiment substantially intersects the first scan line 210a and the second scan line 210b, wherein the first sub-pixel 310 and the second sub-pixel 320 connected to the same data line 220a are distributed on the data line.
  • the first sub-pixel 310 and the second sub-pixel 320 are substantially in the same column.
  • the partial pixels 230 located in the even rows are connected to one of the scanning lines 210, and the partial pixels 230 located in the odd rows are connected to the other scanning line 210.
  • the second sub-pixel 320 located in the even row is electrically connected to the first scan line 210a
  • the first sub-pixel 310 located in the odd row is electrically connected to the second scan line 210b
  • the first gate 312b of the first transistor 3 12 is substantially connected to the second scan line 210b
  • the second gate 322b of the second transistor 322 is substantially connected to the first scan line 210a.
  • the first transistor 312 and the second transistor 322 are located on the same side of the column pixel 230, and in each pixel 230, the first transistor 312 is in the form of the second transistor 322 horizontally flipped by 180 degrees. .
  • the shape of the first transistor 312 and the shape of the second transistor 322 are mirrored and slightly misaligned with the data line 220a as a reference line.
  • the layout of the first transistor 312 and the second transistor 322 are substantially the same, that is, the shapes of the first channel layer 312a and the second channel layer 322a, and the first drain 312c and the second drain 322c correspond to each other.
  • the extending direction of the one pixel electrode 314 and the second pixel electrode 324 and the shapes of the first source electrode 312d and the second source electrode 322d are the same.
  • first pixel electrode 314 and the second pixel electrode 324 cover a portion of the second wire 214 , wherein the second pixel electrode 324 also covers a portion of the first branch 216 and a portion of the second branch 218 located in the same pixel 230 .
  • the line connecting the center points of the first sub-pixel 310 and the second sub-pixel 320 approaches the same straight line.
  • the first sub-pixel 310 located in the odd-numbered rows and the second sub-pixel 320 located in the even-numbered rows are not completely aligned.
  • the line connecting the center point of the first sub-pixel 310 is T1
  • the line connecting the center point of the second sub-pixel 320 is T2, wherein the offset degree S of the connection line T1 and the connection line T2 is the first sub-pixel 310 or the
  • the two sub-pixels 320 are 3% to 50% of the length. Since the degree of offset S is not large, the first sub-pixel 310 and the second sub-pixel 320 can be counted in the same column.
  • the extending direction of the first drain electrode 312c to the corresponding first pixel electrode 314 is the same as the extending direction of the second drain electrode 322c to the corresponding second pixel electrode 324. Therefore, even when a misalignment occurs between different layers when making a transistor or a slight offset due to the tolerance of the precision of the machine, the variation of the gate-drain parasitic capacitance (Cgd) can be relatively uniform.
  • the more consistent change means that the gate-drain parasitic capacitance (Cgd) of each pixel 230 on the pixel array 200a will become larger or smaller at the same time.
  • two adjacent pixels 230 The difference in brightness between the two is small, and when the pixel array 200a is applied to a display (not shown), it helps to improve the display uniformity of the display, thereby avoiding the problem of flicker and uneven brightness.
  • the pixel array 200a of the present embodiment designs the scan line 210 in a zigzag layout manner, the first sub-pixel 310 and the second sub-pixel 320 connected to the same data line 220a are disposed on the data line 220a. On both sides. At the same time, the first gate 312b of the first transistor 312 located in the same pixel 230 is connected to the second scan line 210b, and the second gate 322b of the second transistor 322 is connected to the first scan line 210a. In addition to greatly reducing the number of layouts of the data lines 220, this design can also effectively increase the aperture ratio, so that the brightness of the screen display is significantly improved.
  • the pixels 230 of the embodiment are basically located on the same column, and each of the pixels 230 composed of the first sub-pixel 310 and the second sub-pixel 320 is substantially rectangular, and thus compared with the existing pixels.
  • the embodiment can effectively improve the color rendering capability of the picture.
  • FIG. 3A is a schematic diagram of a pixel array according to an embodiment of the invention.
  • Fig. 3B is a schematic cross-sectional view taken along line A-A of Fig. 3A, and line BB'.
  • the pixel array 200c of the present embodiment is similar to the above-described pixel array 200a.
  • the gap D between adjacent pixels is reduced, so that in the same layout space, since the gap D between adjacent pixels becomes smaller, the area of the pixel can be increased. In turn, the aperture ratio of the pixel is increased.
  • the dielectric layer 240 having high coverage characteristics is also over the first transistor 312" and the second transistor 322", and the dielectric layer 240 can also be regarded as a The flat layer is overcoated, so the layout of the first pixel electrode 314" and the second pixel electrode 324" may further extend above the corresponding scan line 210 to further increase the aperture ratio of the pixel. It is to be noted that in the present embodiment, the first pixel electrode 314" and the second pixel electrode 324" only show the nth scanning line and the (n+1)th scanning line. However, in other embodiments, referring to FIG. 3C, the first pixel electrode 314'" and the second pixel electrode 324" may also cover the entire first sub-pixel 310"' and the second sub-pixel 320"'.
  • a sub-pixel 310 further includes a first capacitor electrode 316
  • the second sub-pixel 320 further includes a second capacitor electrode 326.
  • the first capacitor electrode 316 is electrically connected to the first pixel electrode 314 ′′, and the first capacitor electrode 316 partially overlaps with the previous scan line 210 (ie, the nth scan line 210 ) to form a first storage capacitor.
  • Cl that is, the lower electrode of the first storage capacitor C1 is a portion of the upper scan line 210, the upper electrode is the first capacitor electrode 316, and the upper electrode and the data line 220 belong to the same film layer.
  • the second capacitor electrode 326 is electrically connected.
  • the second capacitor electrode 326 partially overlaps with the previous scan line 210 (ie, the (n-1)th scan line 210) to form a second storage capacitor C2, that is, the second storage capacitor C2.
  • the electrode is a portion of the upper scan line 210
  • the upper electrode is the second capacitor electrode 326
  • the upper electrode and the data line 220 are in the same film layer.
  • the first pixel electrode 314" passes through the first contact window 242 of the dielectric layer 240 and the first transistor.
  • 312" is electrically connected and electrically connected to the first capacitor electrode 316 through the second contact window 244 of the dielectric layer 240.
  • an opening voltage level is applied to the (n+1)th a scan line 210 (ie, a second scan line 210b) to turn on the first transistor 312", and then input a data voltage from the data line 220a, the data voltage is passed through the first transistor 312 that is turned on, and the first of the dielectric layer 240
  • the contact window 242 is transferred to the first pixel electrode 314".
  • the first pixel electrode 314" having the data voltage transmits the data voltage to the first capacitor electrode 316 through the second contact window 244 of the dielectric layer 240.
  • the first pixel electrode 314" is equipotential to the first capacitor electrode 316, so the (n+1)th scan line 210 (ie, the second scan line 210b), the first capacitor electrode 316, and the (n+1)th a gate insulating layer 31 between the strip scan line 210 (ie, the second scan line 210b) and the first capacitor electrode 316 8 collectively constitutes a first storage capacitor C1 of the first sub-pixel 310", and the first storage capacitor C1 is used to stabilize the data voltage of the first pixel electrode 314" during the first transistor 312" off, thereby improving display quality.
  • the first sub-pixel 310" can have both a high aperture ratio and a high storage capacitance value.
  • the operation mechanism of the second sub-pixel 320" is similar to that of the first sub-pixel 310", and will not be described again.
  • the pixel array of the present invention designs the scan lines in a zigzag layout manner, and the first sub-pixels and the second sub-pixels connected to the same data line are disposed on both sides of the data line.
  • the first gate of the first transistor located in the same pixel is connected to the (n+1)th scan line
  • the second gate of the second transistor is connected to the nth scan line. Therefore, in addition to substantially reducing the number of layouts of the data lines, the pixel array of the present invention can effectively increase the aperture ratio to significantly improve the brightness of the screen display, and can also improve the color performance of the display.
  • the drains of the transistors extend to the corresponding pixel electrodes, the difference in gate-drain parasitic capacitance (Cgd) in the overall pixel is obtained when there is a registration deviation between the layers on the transistor. small.
  • Cgd gate-drain parasitic capacitance

Abstract

A pixel array includes a plurality of scan lines (210, 210a, 210b) curvilinearly extending along column direction, a plurality of data lines (220, 220a, 220b) extending along row direction and a plurality of pixels (230) connected with the scan lines (210, 210a, 210b) and data lines (220, 220a, 20b). Each pixel (230) arranged in the nth column includes a first sub-pixel (310) and a second sub-pixel (320). The first sub-pixel (310) includes a first transistor (312) and a first pixel electrode (314). The first gate electrode (312b) of the first transistor (312) is connected with the (n+l)th scan line. The first drain electrode (312c) of the first transistor (312) is connected with the first pixel electrode (314). The second sub-pixel (320) includes a second transistor (322) and a second pixel electrode (324). The second gate electrode (322b) of the second transistor (322) is connected with the nth scan line. The second drain electrode (322c) of the second transistor (322) is connected with the second pixel electrode (324). The first source electrode (312d) of the first transistor (312) and the second source electrode (322d) of the second transistor (322) are connected to the same data line of the data lines (220, 220a, 220b).

Description

像素阵列  Pixel array
【技术领域】  [Technical Field]
本发明涉及一种显示阵列, 特别是涉及一种像素阵列。 【背景技术】  The present invention relates to a display array, and more particularly to a pixel array. 【Background technique】
一般而言, 平面显示器中主要是由一显示面板以及多个驱动芯片 In general, a flat panel display mainly consists of a display panel and a plurality of driving chips.
( Driver IC ) 所构成, 其中显示面板上具有像素阵列, 而像素阵列中的像 素是通过对应的扫描线以及对应的数据线所驱动。 为了使得平面显示器的 产品更为普及, 业者皆如火如茶地进行降低成本作业, 近年来一种数据驱 动芯片减半 ( half source driver ) 的架构设计被提出, 其主要是利用像素阵 列上的布局来降低数据驱动芯片的使用量。 (Driver IC) is constructed in which the display panel has an array of pixels, and the pixels in the pixel array are driven by corresponding scan lines and corresponding data lines. In order to make the products of flat-panel displays more popular, the industry is doing a lot of work to reduce costs. In recent years, a data design of a data source chip half-source driver has been proposed, which mainly uses the pixel array. Layout to reduce the amount of data driven chip usage.
图 1A是现有的一种像素阵列的示意图。 请参考图 1 , 在现有的一种像 素阵列 100a的设计中, 两条扫描线 120a位于相邻两列像素 130a、 130b之 间, 其中二像素 130a、 130b中的主动元件 140、 150的栅极 142、 152分别 位于扫描线 120a的两侧。 在具有上述架构的主动元件 140、 150的制作流 程中, 主动元件 140、 150 的栅极 142、 152与主动元件 140、 150 的源极 144、 154、 漏极 146、 156是以不同的掩模工艺进行制作的。 然而, 当机台 的精密度不足或是工艺上的对位误差时, 主动元件 140、 150 的栅极 142、 152 与源极 144、 154、 漏极 146、 156之间会产生相对位移而使主动元件 140、 150 的特性偏离原有的设计值。 此时, 由于栅极 142、 152 分设于对 应扫描线 120a的两侧, 当主动元件 140、 150的栅极 142、 152与漏极 146、 156产生相对位移时,像素 130a、 130b中的主动元件 140、 150的栅极 142、 152与漏极 146、 156 的重叠面积变化皆不相同, 若朝向像素 130b的方向 偏移时, 则位于扫描线 120a —侧的像素 130a 的栅极-漏极寄生电容 Cgd (parasitic capacitance, Cgd)变大, 而位于扫描线 120a另一侧的像素 130b的 栅极-漏极寄生电容 Cgd则变小, 导致像素 130a、 130b中的栅极-漏极寄生 电容 Cgd不同。 如此一来, 由于上述工艺上的误差所造成栅极 -漏极寄生电 容 Cgd的差异性大, 因此, 此像素阵列 100a在显示过程中易产生显示亮度 不均匀的问题。 FIG. 1A is a schematic diagram of a conventional pixel array. Referring to FIG. 1, in the design of a conventional pixel array 100a, two scan lines 120a are located between two adjacent columns of pixels 130a, 130b, wherein the gates of the active elements 140, 150 in the two pixels 130a, 130b The poles 142, 152 are respectively located on both sides of the scanning line 120a. In the fabrication flow of the active devices 140, 150 having the above architecture, the gates 142, 152 of the active devices 140, 150 and the sources 144, 154, 145, 156 of the active devices 140, 150 are in different masks. Process made. However, when the precision of the machine is insufficient or the alignment error in the process, the relative displacement between the gates 142, 152 of the active elements 140, 150 and the sources 144, 154, the drains 146, 156 may cause The characteristics of the active components 140, 150 deviate from the original design values. At this time, since the gate electrodes 142 and 152 are disposed on both sides of the corresponding scan line 120a, when the gates 142 and 152 of the active elements 140 and 150 are relatively displaced from the drain electrodes 146 and 156, the active elements in the pixels 130a and 130b are disposed. The overlapping areas of the gates 142, 152 and the drains 146, 156 of 140, 150 are all different. If the direction toward the pixel 130b is shifted, the gate-drain parasitic of the pixel 130a on the side of the scan line 120a is parasitic. The capacitance Cgd (parasitic capacitance, Cgd) becomes larger, and the pixel 130b located on the other side of the scan line 120a The gate-drain parasitic capacitance Cgd becomes smaller, resulting in a difference in the gate-drain parasitic capacitance Cgd in the pixels 130a, 130b. As a result, the difference in gate-drain parasitic capacitance Cgd caused by the above-mentioned process error is large, and therefore, the pixel array 100a is liable to cause display brightness unevenness during display.
为了减少像素间栅极-漏极寄生电容 Cgd的差异,美国专利第 US Patent No. 6,583,777号中提出一种像素阵列结构。 请参考图 1B , 像素阵列 100b 具有多个不规则排列的像素 R、 G、 B以及分别与像素 1 、 G、 B连接的扫 描线 110b与数据线 120b。 其中, 扫描线 110b沿着列方向直线延伸, 而数 据线 120b沿着行方向直线延伸且扫描线 110b垂直相交。 然而, 由于像素 R、 G、 B呈现不规则排列, 在显示的过程中容易产生色彩表现上有明显不 足的现象。 此外, 由于每一像素 R、 G、 B 中皆横跨三条扫描线 110b , 因 此, 此像素阵列的设计会降低开口率, 而使得其应用于显示器时出现亮度 不足、 显示品质较差的现象。  In order to reduce the difference in gate-drain parasitic capacitance Cgd between pixels, a pixel array structure is proposed in U.S. Patent No. 6,583,777. Referring to FIG. 1B, the pixel array 100b has a plurality of irregularly arranged pixels R, G, B and scan lines 110b and data lines 120b connected to the pixels 1, G, B, respectively. Wherein, the scanning line 110b extends straight along the column direction, and the data line 120b extends straight in the row direction and the scanning lines 110b intersect perpendicularly. However, since the pixels R, G, and B are irregularly arranged, it is easy to cause a phenomenon in which the color expression is significantly insufficient in the display process. In addition, since each of the pixels R, G, and B spans the three scanning lines 110b, the design of the pixel array reduces the aperture ratio, which causes the brightness to be insufficient and the display quality to be poor when applied to the display.
【发明内容】 [Summary of the Invention]
本发明提供一种像素阵列, 其可以减少栅极-漏极寄生电容的差异, 因 而有助于提高显示品质。  The present invention provides a pixel array which can reduce the difference in gate-drain parasitic capacitance and thus contribute to improvement in display quality.
本发明提出一种像素阵列, 其包括多条扫描线、 多条数据线以及多个 像素。 扫描线沿着列方向曲折延伸。 数据线沿着行方向延伸并与扫描线相 交。 像素与扫描线以及数据线连接, 排列于第 《列中的每一像素包括一第 一子像素以及一第二子像素。 第一子像素包括一第一晶体管与一第一像素 电极, 其中第一晶体管的一第一栅极与第 ^ + ^条扫描线连接, 而第一晶体 管的一第一漏极与第一像素电极连接。 第二子像素包括一第二晶体管与一 第二像素电极, 其中第二晶体管的一第二栅极与第 《条扫描线连接, 第二 晶体管的一第二漏极与第二像素电极连接, 第一晶体管的一第一源极以及 第二晶体管的一第二源极连接至数据线中的同一条数据线。 在本发明的一实施例中, 上述第一晶体管与第二晶体管的布局型态是 以对应的扫描线为基准向上凸出的型态。 The present invention provides a pixel array including a plurality of scan lines, a plurality of data lines, and a plurality of pixels. The scan lines extend in a zigzag direction along the column direction. The data lines extend in the row direction and intersect the scan lines. The pixels are connected to the scan lines and the data lines, and each pixel arranged in the column includes a first sub-pixel and a second sub-pixel. The first sub-pixel includes a first transistor and a first pixel electrode, wherein a first gate of the first transistor is connected to the ^^^ scan line, and a first drain and a first pixel of the first transistor Electrode connection. The second sub-pixel includes a second transistor and a second pixel electrode, wherein a second gate of the second transistor is connected to the “scanning line, and a second drain of the second transistor is connected to the second pixel. A first source of the first transistor and a second source of the second transistor are connected to the same data line in the data line. In an embodiment of the invention, the layout patterns of the first transistor and the second transistor are convex upwards based on the corresponding scan lines.
在本发明的一实施例中, 上述第一晶体管与第二晶体管的布局型态是 以对应的扫描线为基准向下凸出的型态。  In an embodiment of the invention, the layout pattern of the first transistor and the second transistor is a pattern that protrudes downward based on a corresponding scan line.
在本发明的一实施例中, 上述在排列于同一列的像素中, 第一晶体管 与第二晶体管位于该列像素的同一侧。  In an embodiment of the invention, in the pixels arranged in the same column, the first transistor and the second transistor are located on the same side of the column of pixels.
在本发明的一实施例中, 上述每一第一像素电极或每一第二像素电极 的三个侧边被对应的上一条扫描线围绕。  In an embodiment of the invention, the three sides of each of the first pixel electrodes or each of the second pixel electrodes are surrounded by a corresponding one of the scan lines.
在本发明的一实施例中, 上述每一扫描线在像素阵列上呈一方波形。 在本发明的一实施例中, 上述每一扫描线包括多个第一导线以及多个 第二导线。 第一导线沿着列方向延伸。 第二导线沿着行方向延伸。 第一导 线与第二导线交替地连接。  In an embodiment of the invention, each of the scan lines has a waveform on the pixel array. In an embodiment of the invention, each of the scan lines includes a plurality of first wires and a plurality of second wires. The first wire extends in the column direction. The second wire extends in the row direction. The first wire is alternately connected to the second wire.
在本发明的一实施例中, 上述部分第二导线被第一像素电极或第二像 素电极其中之一覆盖。  In an embodiment of the invention, the portion of the second wire is covered by one of the first pixel electrode or the second pixel electrode.
在本发明的一实施例中, 上述第二导线位于同一像素中的第一子像素 与第二子像素之间以及相邻两像素之间。  In an embodiment of the invention, the second wire is located between the first sub-pixel and the second sub-pixel in the same pixel and between two adjacent pixels.
在本发明的一实施例中, 上述每一第一导线的长度实质上大于等于其 中一个像素电极的宽度, 而每一第二导线的长度实质上大于等于其中一个 像素电极的长度。  In an embodiment of the invention, the length of each of the first wires is substantially greater than or equal to the width of one of the pixel electrodes, and the length of each of the second wires is substantially greater than or equal to the length of one of the pixel electrodes.
在本发明的一实施例中, 上述每一扫描线还包括多个第一分支以及多 个第二分支。 第一分支连接部分第一导线且沿着行方向延伸。 第二分支连 接部分第一导线且沿着行方向延伸。 第一分支与第二分支实质上平行于第 二导线。  In an embodiment of the invention, each of the scan lines further includes a plurality of first branches and a plurality of second branches. The first branch connects the portion of the first wire and extends in the row direction. The second branch connects a portion of the first wire and extends in the row direction. The first branch and the second branch are substantially parallel to the second wire.
在本发明的一实施例中, 上述位于同一像素中的部分第一分支与部分 第二分支被第二像素电极覆盖。  In an embodiment of the invention, the portion of the first branch and the portion of the second branch located in the same pixel are covered by the second pixel electrode.
在本发明的一实施例中, 上述的与同一条数据线连接的像素分布于条 数据线之两侧。 In an embodiment of the invention, the pixels connected to the same data line are distributed on the strip. Both sides of the data line.
在本发明的一实施例中, 上述在排列于同一列的像素中, 位于偶数行 的部分像素与其中一条扫描线连接, 而位于奇数行的部分像素与另一条扫 描线连接。  In an embodiment of the invention, in the pixels arranged in the same column, a part of the pixels located in the even rows are connected to one of the scanning lines, and a part of the pixels located in the odd rows are connected to the other scanning line.
在本发明的一实施例中, 上述在排列于第 《列的每一像素中, 第一晶 体管与第二晶体管分别具有一第一通道层以及一第二通道层, 第一通道层 位于第 《 + 条扫描线上方, 第二通道层位于第《条扫描线上方。 第一漏极 自第一通道层沿着一第一方向与第一像素电极连接, 第二漏极自第二通道 层沿着一第二方向与第二像素电极连接, 且第一方向与第二方向相同。  In an embodiment of the present invention, in each pixel arranged in the column, the first transistor and the second transistor respectively have a first channel layer and a second channel layer, and the first channel layer is located in the first + Above the scan line, the second channel layer is above the “Scan Line”. The first drain is connected to the first pixel electrode from the first channel layer along a first direction, and the second drain is connected to the second pixel electrode from the second channel layer along a second direction, and the first direction is The second direction is the same.
在本发明的一实施例中, 上述在排列于同一列的像素中, 第一与第二 子像素的中心点的连线趋近于同一条直线。  In an embodiment of the invention, in the pixels arranged in the same column, the line connecting the center points of the first and second sub-pixels approaches the same straight line.
在本发明的一实施例中, 上述在每一像素中, 第一晶体管的形状与第 二晶体管的形状为以数据线为基准呈镜像的形式。  In an embodiment of the invention, in each of the pixels, the shape of the first transistor and the shape of the second transistor are in the form of a mirror image on the basis of the data line.
在本发明的一实施例中, 上述第一子像素还包括一第一电容电极, 电 性连接第一像素电极, 且第一电容电极与数据线属同一膜层并与上一条扫 描线部分重叠, 以构成一第一储存电容。 第二子像素还包括一第二电容电 极, 电性连接第二像素电极, 且第二电容电极与数据线属同一膜层并与上 一条扫描线部分重叠, 以构成一第二储存电容。  In an embodiment of the invention, the first sub-pixel further includes a first capacitor electrode electrically connected to the first pixel electrode, and the first capacitor electrode and the data line belong to the same film layer and partially overlap the previous scan line. To form a first storage capacitor. The second sub-pixel further includes a second capacitor electrode electrically connected to the second pixel electrode, and the second capacitor electrode and the data line are in the same film layer and partially overlap with the previous scan line to form a second storage capacitor.
基于上述, 本发明的像素阵列将扫描线设计为曲折的布局方式, 并将 与同一数据线连接的第一子像素与第二子像素皆配置于该条数据线的两侧。 同时, 将位于同一像素中的第一晶体管的第一栅极与第(n+1)条扫描线连接, 将第二晶体管的第二栅极与第 n条扫描线连接。 因此, 本发明的像素阵列 的设计除了可以大幅减少数据线的布局数量, 以减少制造成本外, 更有效 提升开口率使画面显示亮度得到明显的提升外, 亦可提高显示器的色彩表 现能力。 另外, 由于晶体管的漏极对应的像素电极的延伸方向皆相同, 因 此在制作晶体管上膜层之间有对位偏差时, 整体像素中的栅极 -漏极寄生电 容 (Cgd ) 的差异小。 如此一来, 当本发明的像素阵列应用于显示器时, 有助于提高显示器的显示均匀性, 即可以避免产生闪烁 (flicker ) 而造成 亮度不均匀的问题。 Based on the above, the pixel array of the present invention designs the scan lines in a zigzag layout manner, and the first sub-pixels and the second sub-pixels connected to the same data line are disposed on both sides of the data line. At the same time, the first gate of the first transistor located in the same pixel is connected to the (n+1)th scan line, and the second gate of the second transistor is connected to the nth scan line. Therefore, the design of the pixel array of the present invention can greatly reduce the number of layouts of the data lines, thereby reducing the manufacturing cost, and effectively increasing the aperture ratio to significantly improve the brightness of the screen display, and can also improve the color performance of the display. In addition, since the extending directions of the pixel electrodes corresponding to the drains of the transistors are the same, the gate-drain parasitic power in the entire pixel is obtained when there is a registration deviation between the layers on the transistor. The difference in capacitance (Cgd) is small. In this way, when the pixel array of the present invention is applied to a display, it helps to improve the display uniformity of the display, thereby avoiding the problem of unevenness of brightness caused by flicker.
为让本发明之上述特征和优点能更明显易懂, 下文特举实施例, 并配 合所附图示作详细说明如下。  The above described features and advantages of the present invention will be more apparent from the following description of the appended claims.
【附图说明】 [Description of the Drawings]
图 1A是现有的一种像素阵列的示意图。  1A is a schematic diagram of a conventional pixel array.
图 1B是现有的另一种像素阵列的示意图。  FIG. 1B is a schematic diagram of another conventional pixel array.
图 2A是本发明一实施例的一种像素阵列的示意图。  2A is a schematic diagram of a pixel array in accordance with an embodiment of the present invention.
图 2B绘示了图 2A的像素阵列的扫描线的示意图。  2B is a schematic diagram of a scan line of the pixel array of FIG. 2A.
图 2C是本发明另一实施例的一种像素阵列的示意图。  2C is a schematic diagram of a pixel array in accordance with another embodiment of the present invention.
图 2D是本发明又一实施例的一种像素阵列的示意图。  2D is a schematic diagram of a pixel array according to still another embodiment of the present invention.
图 3A是本发明一实施例的一种像素阵列的示意图。  3A is a schematic diagram of a pixel array in accordance with an embodiment of the present invention.
图 3B是沿图 3A的线 A-A,以及线 B-B,的剖面示意图。  Fig. 3B is a schematic cross-sectional view taken along line A-A of Fig. 3A, and line B-B.
图 3C是本发明另一实施例的一种像素阵列的示意图。  FIG. 3C is a schematic diagram of a pixel array according to another embodiment of the present invention.
【具体实施方式】 【detailed description】
下面结合附图说明对本发明的具体实施方式进行详细说明。  The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
图 2A为本发明一实施例的一种像素阵列的示意图。图 2B绘示了图 2A 的像素阵列的扫描线的示意图。请同时参考图 2A与图 2B ,在本实施例中, 像素阵列 200a包括多条扫描线 210、 多条数据线 220以及多个像素 230。 为方便说明, 令像素阵列 200a上具有一列方向 L1 以及一行方向 L2, 且列 方向 L1 实质上正交于^"方向 L2。  2A is a schematic diagram of a pixel array according to an embodiment of the invention. 2B is a schematic diagram of scan lines of the pixel array of FIG. 2A. Referring to FIG. 2A and FIG. 2B simultaneously, in the embodiment, the pixel array 200a includes a plurality of scan lines 210, a plurality of data lines 220, and a plurality of pixels 230. For convenience of explanation, the pixel array 200a has a column direction L1 and a row direction L2, and the column direction L1 is substantially orthogonal to the "" direction L2.
如图 2B所示, 本实施例的扫描线 210大体上是沿着列方向 L1 曲折延 伸, 且为方便说明, 下文将以扫描线 210是由多条第一扫描线 210a与多条 第二扫描线 210b所构成为例进行说明。 换言之, 扫描线 210在宏观上而言 是彼此平行地往列方向 L1延伸, 在微观上而言, 扫描线 210是大体上呈一 方波形在基板上蜿蜒延伸。 As shown in FIG. 2B, the scan line 210 of the present embodiment extends substantially in a meandering manner along the column direction L1, and for convenience of description, the scan line 210 will be composed of a plurality of first scan lines 210a and a plurality of strips. The configuration of the second scanning line 210b will be described as an example. In other words, the scanning lines 210 extend macroscopically in parallel with each other in the column direction L1. Microscopically, the scanning lines 210 extend substantially in a single waveform on the substrate.
更具体而言,在本实施例中,每一第一扫描线 210a(或第二扫描线 210b ) 包括多个第一导线 212、 多个第二导线 214、 多个第一分支 216以及多个第 二分支 218。 第一导线 212实质上沿着列方向 L1延伸, 而第二导线 214实 质上沿着行方向 L2延伸。 特别是, 第一导线 212与第二导线 214交替地连 接, 使第一扫描线 210a实质上呈方波形。 当然, 在其他实施例中, 第一扫 描线 210a亦可呈现锯齿形状或呈 S形的形状。第一分支 216连接部分第一 导线 212且实质上沿着行方向 L2延伸。 第二分支 218连接部分第一导线 212且沿着行方向 L2延伸。 其中, 第一分支 216与第二分支 218实质上平 行于第二导线 214, 且第一扫描线 210a于邻近第二扫描线 210b的每一段 第一导线 212上连接一个第一分支 216与一个第二分支 218 , 以使第一扫 描线 210a的第一分支 216与第二扫描线 210b的第二导线 214实质上位于 数据线的两侧。 因此, 各子像素邻近数据线可通过第一分支 216与第二分 支 218进一步达到避免侧向漏光的效果。  More specifically, in this embodiment, each of the first scan lines 210a (or the second scan lines 210b) includes a plurality of first wires 212, a plurality of second wires 214, a plurality of first branches 216, and a plurality of Second branch 218. The first wire 212 extends substantially along the column direction L1, and the second wire 214 extends substantially along the row direction L2. In particular, the first wire 212 and the second wire 214 are alternately connected such that the first scan line 210a is substantially square. Of course, in other embodiments, the first scan line 210a may also have a sawtooth shape or an S-shaped shape. The first branch 216 connects a portion of the first wire 212 and extends substantially along the row direction L2. The second branch 218 connects a portion of the first wire 212 and extends along the row direction L2. The first branch 216 and the second branch 218 are substantially parallel to the second wire 214, and the first scan line 210a is connected to a first branch 216 and a first segment on each of the first wires 212 adjacent to the second scan line 210b. The two branches 218 are such that the first branch 216 of the first scan line 210a and the second wire 214 of the second scan line 210b are substantially on both sides of the data line. Therefore, each sub-pixel adjacent to the data line can further achieve the effect of avoiding lateral light leakage through the first branch 216 and the second branch 218.
请再参考图 2A与图 2B , 本实施例中的数据线 220实质上沿着行方向 L2延伸并与第一扫描线 210a以及第二扫描线 210b相交以定义出多个像素 区域。 在本实施例中, 数据线 220与第一扫描线 210a及第二扫描线 210b 相交 (intersect ) 但并未电性连接。 像素阵列 200a中的各像素 230与对应 的第一扫描线 210a、 第二扫描线 210b以及数据线 220连接, 且排列于第 n 列中的每一像素 230 包括一第一子像素 310 以及一第二子像素 320。 第一 子像素 310 包括一第一晶体管 312与一第一像素电极 314, 其中第一晶体 管 312具有一第一通道层 312a、 一第一栅极 312b、 一第一漏极 312c以及 一第一源极 312d。 第一通道层 312a位于第(n+1)条扫描线 210 (即第二扫 描线 210b ) 上方, 而第一栅极 312b与第(n+1)条扫描线 210 (即第二扫描 线 210b )连接。 第一漏极 3 12c与第一像素电极 314连接, 且第一漏极 3 12c 自第一通道层 312a沿着一第一方向 D1与第一像素电极 3 14连接, 意即第 一画素电极 3 14对应第 (n+ 1 ) 条扫描线 210 (即第二扫描线 210b )。 第一 像素电极 3 14的三个侧边被对应的上一条扫描线 210(即第一扫描线 210a ) 围绕。 Referring to FIG. 2A and FIG. 2B again, the data line 220 in this embodiment extends substantially along the row direction L2 and intersects the first scan line 210a and the second scan line 210b to define a plurality of pixel regions. In this embodiment, the data line 220 intersects with the first scan line 210a and the second scan line 210b but is not electrically connected. Each of the pixels 230 in the pixel array 200a is connected to the corresponding first scan line 210a, the second scan line 210b, and the data line 220, and each pixel 230 arranged in the nth column includes a first sub-pixel 310 and a first Two sub-pixels 320. The first sub-pixel 310 includes a first transistor 312 and a first pixel electrode 314. The first transistor 312 has a first channel layer 312a, a first gate 312b, a first drain 312c, and a first source. Pole 312d. The first channel layer 312a is located above the (n+1)th scan line 210 (ie, the second scan line 210b), and the first gate 312b and the (n+1)th scan line 210 (ie, the second scan) Line 210b) is connected. The first drain 3 12c is connected to the first pixel electrode 314, and the first drain 3 12c is connected to the first pixel electrode 314 from the first channel layer 312a along a first direction D1, that is, the first pixel electrode 3 14 corresponds to the (n+1)th scan line 210 (i.e., the second scan line 210b). The three sides of the first pixel electrode 314 are surrounded by the corresponding previous scan line 210 (i.e., the first scan line 210a).
另一方面, 第二子像素 320包括一第二晶体管 322与一第二像素电极 324 , 其中第二晶体管 322具有一第二通道层 322a、 一第二栅极 322b、 一 第二漏极 322c以及一第二源极 322d。 第二通道层 322a位于第 n条扫描线 210 (即第一扫描线 210a )上方, 而第二栅极 322b与第 n条扫描线 210 (即 第一扫描线 210a ) 连接。 第二漏极 322c与第二像素电极 324连接, 且第 二漏极 322c 自第二通道层 322a沿着一第二方向 D2 与第二像素电极 324 连接,意即第二画素电极 324对应第 n条扫描线 210(即第一扫描线 210a )。 特别的是, 第一方向 D1与第二方向 D2相同。 即, 第一方向 D 1与第二方 向 D2 实质上平行。 第二像素电极 324 的三个侧边被对应的对应的上一条 扫描线 (未绘示) 围绕。  On the other hand, the second sub-pixel 320 includes a second transistor 322 and a second pixel electrode 324, wherein the second transistor 322 has a second channel layer 322a, a second gate 322b, and a second drain 322c. A second source 322d. The second channel layer 322a is located above the nth scan line 210 (i.e., the first scan line 210a), and the second gate 322b is connected to the nth scan line 210 (i.e., the first scan line 210a). The second drain 322c is connected to the second pixel electrode 324, and the second drain 322c is connected to the second pixel electrode 324 from the second channel layer 322a along a second direction D2, that is, the second pixel electrode 324 corresponds to the nth A scan line 210 (ie, the first scan line 210a). In particular, the first direction D1 is the same as the second direction D2. That is, the first direction D 1 is substantially parallel to the second direction D2. The three sides of the second pixel electrode 324 are surrounded by corresponding corresponding upper scan lines (not shown).
具体来说, 第一晶体管 312与第二晶体管 322的布局型态是以分别对 应第二扫描线 210b与第一扫描线 210a的基准向上凸出的型态, 因此, 在 本实施例中, 第 n列的像素是位于第 n条扫描线 210所围绕的区域内, 位 于第 n列的第一子像素 310与第二子像素 320中,第一栅极 3 12b与第(n+ l ) 条扫描线 210 (即第二扫描线 210b )连接, 而第二栅极 322b与第 n条扫描 线 210 (即第一扫描线 210a ) 连接, 换而言之, 与第一栅极 312b相连接的 扫描线 210为与第二栅极 322b相连接的扫描线 210的下一条,且由于 n为 任意的正整数, 本领域的技术人员亦可称第一栅极 3 12b 与第 n条扫描线 210连接, 而第二栅极 322b与第(n-1 )条扫描线 210连接, 本发明并不以此 限定。 当然, 在其他实施例中, 请参考图 2C , 像素阵列 200b , 第一晶体 管 312,与第二晶体管 322,的布局型态亦可是以分别对应第二扫描线 210b 与第一扫描线 210a的基准向下凸出的型态。 也就是说, 第 n列的像素是位 于第 n条扫描线 210所围绕的区域内, 在第 n列像素中, 第一栅极 312b' 会与第 n条扫描线 210 连接, 而第二栅极 322b,会与第(n-1 )条扫描线 210 连接,换而言之, 与第一栅极 312b,相连接的扫描线 210同样为与第二栅极 322b'相连接的扫描线 210的下一条, 且由于 n为任意的正整数, 本领域的 技术人员亦可称第一栅极 312b与第 n条扫描线 210连接,而第二栅极 322b 与第(n+1)条扫描线 210连接, 本发明并不以此限定。 此外, 在此领域的技 术人员皆知本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左 J、 「右」等, 仅是参考附加图式的方向。 因此, 使用的方向用语是用来说明, 而非用来限制本发明。 换而言之, 若将图 2A的图示旋转 180度, 亦可得 到第一晶体管 312与第二晶体管 322的布局型态是以分别对应第二扫描线 210b与第一扫描线 210a的基准向下凸出的型态, 请参考图 2D。 再者, 在 本实例中,第一晶体管 312的第一源极 312d以及第二晶体管 322的第二源 极 322d连接至数据线 220中的同一条数据线 220a。 Specifically, the layout patterns of the first transistor 312 and the second transistor 322 are in a shape that protrudes upward corresponding to the reference of the second scan line 210b and the first scan line 210a, respectively. Therefore, in this embodiment, The pixels of the n columns are located in the area surrounded by the nth scan line 210, and are located in the first sub-pixel 310 and the second sub-pixel 320 of the nth column, and the first gate 3 12b and the (n+ l )th scan The line 210 (i.e., the second scan line 210b) is connected, and the second gate 322b is connected to the nth scan line 210 (i.e., the first scan line 210a), in other words, the scan connected to the first gate 312b. The line 210 is the next one of the scan lines 210 connected to the second gate 322b, and since n is an arbitrary positive integer, those skilled in the art may also refer to the first gate 3 12b being connected to the nth scan line 210. The second gate 322b is connected to the (n-1)th scanning line 210, and the present invention is not limited thereto. In other embodiments, referring to FIG. 2C, the layout of the pixel array 200b, the first transistor 312, and the second transistor 322 may be corresponding to the second scan line 210b. A pattern that protrudes downward from the reference of the first scan line 210a. That is, the pixel of the nth column is located in the area surrounded by the nth scan line 210. In the nth column of pixels, the first gate 312b' is connected to the nth scan line 210, and the second gate The pole 322b is connected to the (n-1)th scan line 210. In other words, the scan line 210 connected to the first gate 312b is also the scan line 210 connected to the second gate 322b'. The next one, and since n is an arbitrary positive integer, those skilled in the art may also refer to the first gate 312b being connected to the nth scan line 210, and the second gate 322b and the (n+1)th scan. The line 210 is connected, and the present invention is not limited thereto. In addition, those skilled in the art are aware of the directional terms mentioned in the present invention, such as "upper", "lower", "before", "after", "left J, "right", etc. Direction. Therefore, the directional terminology used is for the purpose of illustration and not limitation. In other words, if the illustration of FIG. 2A is rotated by 180 degrees, the layout patterns of the first transistor 312 and the second transistor 322 can be obtained to correspond to the reference directions of the second scan line 210b and the first scan line 210a, respectively. For the shape of the lower bulge, please refer to Figure 2D. Moreover, in the present example, the first source 312d of the first transistor 312 and the second source 322d of the second transistor 322 are connected to the same data line 220a in the data line 220.
具体而言, 如图 2A所示, 第二导线 214是位于同一像素 230 中的第 一子像素 310与第二子像素 320之间以及相邻两像素 230之间。 其中, 每 一第一导线 212 的长度实质上大于等于第一像素电极 314 (或第二像素电 极 324 ) 的宽度, 而每一第二导线 214 的长度实质上大于等于第一像素电 极 314 (或第二像素电极 324 ) 的长度。 此外, 本实施例的数据线 220a实 质上与第一扫描线 210a以及第二扫描线 210b相交, 其中与同一条数据线 220a连接的第一子像素 310与第二子像素 320分布于该数据线 220a之两 侧, 且第一子像素 310与第二子像素 320实质上可算是位于同一列中。 在 本实例排列于同一列的像素 230中, 位于偶数行的部分像素 230与其中一 条扫描线 210连接, 而位于奇数行的部分像素 230与另一条扫描线 210连 接。也就是说,位于偶数行的第二子像素 320与第一扫描线 210a电性连接, 而位于奇数行的第一子像素 310与第二扫描线 210b电性连接。 此外, 第一晶体管 3 12的第一栅极 312b 实质上与第二条扫描线 210b 连接, 而第二晶体管 322的第二栅极 322b实质上与第一条扫描线 210a连 接。 在排列于同一列的像素 230中, 第一晶体管 312与第二晶体管 322位 于列像素 230的同一侧, 且在每一像素 230中, 第一晶体管 312是第二晶 体管 322水平翻转 180度的形式。 即, 第一晶体管 312的形状与第二晶体 管 322的形状以数据线 220a为基准线呈镜像且稍微错位的形式。 换言之, 上述所述的第一晶体管 312与第二晶体管 322的布局实质上相同, 即第一 通道层 312a与第二通道层 322a的形状、 第一漏极 312c与第二漏极 322c 往对应第一像素电极 314 与第二像素电极 324 的延伸方向以及第一源极 312d与第二源极 322d的形状等皆相同。 另外, 第一像素电极 314与第二 像素电极 324覆盖部分第二导线 214 , 其中第二像素电极 324 亦覆盖位于 同一像素 230中的部分第一分支 216与部分第二分支 218。 Specifically, as shown in FIG. 2A , the second wire 214 is located between the first sub-pixel 310 and the second sub-pixel 320 in the same pixel 230 and between the adjacent two pixels 230 . The length of each of the first wires 212 is substantially greater than or equal to the width of the first pixel electrode 314 (or the second pixel electrode 324), and the length of each of the second wires 214 is substantially equal to or greater than the first pixel electrode 314 (or The length of the second pixel electrode 324). In addition, the data line 220a of the embodiment substantially intersects the first scan line 210a and the second scan line 210b, wherein the first sub-pixel 310 and the second sub-pixel 320 connected to the same data line 220a are distributed on the data line. On both sides of 220a, and the first sub-pixel 310 and the second sub-pixel 320 are substantially in the same column. In the pixel 230 in which the present example is arranged in the same column, the partial pixels 230 located in the even rows are connected to one of the scanning lines 210, and the partial pixels 230 located in the odd rows are connected to the other scanning line 210. That is, the second sub-pixel 320 located in the even row is electrically connected to the first scan line 210a, and the first sub-pixel 310 located in the odd row is electrically connected to the second scan line 210b. In addition, the first gate 312b of the first transistor 3 12 is substantially connected to the second scan line 210b, and the second gate 322b of the second transistor 322 is substantially connected to the first scan line 210a. In the pixels 230 arranged in the same column, the first transistor 312 and the second transistor 322 are located on the same side of the column pixel 230, and in each pixel 230, the first transistor 312 is in the form of the second transistor 322 horizontally flipped by 180 degrees. . That is, the shape of the first transistor 312 and the shape of the second transistor 322 are mirrored and slightly misaligned with the data line 220a as a reference line. In other words, the layout of the first transistor 312 and the second transistor 322 are substantially the same, that is, the shapes of the first channel layer 312a and the second channel layer 322a, and the first drain 312c and the second drain 322c correspond to each other. The extending direction of the one pixel electrode 314 and the second pixel electrode 324 and the shapes of the first source electrode 312d and the second source electrode 322d are the same. In addition, the first pixel electrode 314 and the second pixel electrode 324 cover a portion of the second wire 214 , wherein the second pixel electrode 324 also covers a portion of the first branch 216 and a portion of the second branch 218 located in the same pixel 230 .
另外, 在本实施例中, 在排列于同一列的像素 230中, 第一子像素 310 与第二子像素 320的中心点的连线趋近于同一条直线。 具体来说, 在第一 子像素 310与第二子像素 320所构成的像素 230中, 位于奇数行的第一子 像素 310与位于偶数行的第二子像素 320并非完全对齐。 第一子像素 310 的中心点的连线为 T1 , 而第二子像素 320 的中心点的连线为 T2 , 其中连 线 T1与连线 T2的偏移程度 S为第一子像素 310或第二子像素 320长度的 3%至 50%。 由于偏移程度 S不大, 因此第一子像素 310与第二子像素 320 可算是位于同一列中。  Further, in the present embodiment, in the pixels 230 arranged in the same column, the line connecting the center points of the first sub-pixel 310 and the second sub-pixel 320 approaches the same straight line. Specifically, in the pixel 230 formed by the first sub-pixel 310 and the second sub-pixel 320, the first sub-pixel 310 located in the odd-numbered rows and the second sub-pixel 320 located in the even-numbered rows are not completely aligned. The line connecting the center point of the first sub-pixel 310 is T1, and the line connecting the center point of the second sub-pixel 320 is T2, wherein the offset degree S of the connection line T1 and the connection line T2 is the first sub-pixel 310 or the The two sub-pixels 320 are 3% to 50% of the length. Since the degree of offset S is not large, the first sub-pixel 310 and the second sub-pixel 320 can be counted in the same column.
值得注意的是, 在本实施例中, 由于第一漏极 312c往对应第一像素电 极 314的延伸方向与第二漏极 322c往对应第二像素电极 324的延伸方向相 同。 因此, 即使于制作晶体管时不同膜层之间发生对位偏差或是因机台精 度的公差而产生些许偏移时, 栅极-漏极寄生电容 (Cgd ) 的变化可较为一 致, 此处所谓变化较为一致是指像素阵列 200a上的每一像素 230的栅极- 漏极寄生电容( Cgd )会同时变大或同时变小。 如此一来, 相邻两像素 230 之间的亮度差异较小, 且当像素阵列 200a应用于显示器(未绘示) 时有助 于提高显示器的显示均匀性, 即可以避免产生闪烁 (flicker ) 而造成亮度 不均匀的问题。 It should be noted that, in this embodiment, the extending direction of the first drain electrode 312c to the corresponding first pixel electrode 314 is the same as the extending direction of the second drain electrode 322c to the corresponding second pixel electrode 324. Therefore, even when a misalignment occurs between different layers when making a transistor or a slight offset due to the tolerance of the precision of the machine, the variation of the gate-drain parasitic capacitance (Cgd) can be relatively uniform. The more consistent change means that the gate-drain parasitic capacitance (Cgd) of each pixel 230 on the pixel array 200a will become larger or smaller at the same time. As a result, two adjacent pixels 230 The difference in brightness between the two is small, and when the pixel array 200a is applied to a display (not shown), it helps to improve the display uniformity of the display, thereby avoiding the problem of flicker and uneven brightness.
此外, 由于本实施例的像素阵列 200a将扫描线 210设计为曲折的布局 方式,并将与同一数据线 220a连接的第一子像素 310与第二子像素 320皆 配置于该条数据线 220a的两侧。 同时, 将位于同一像素 230中的第一晶体 管 312的第一栅极 312b与第二扫描线 210b连接, 将第二晶体管 322的第 二栅极 322b与第一扫描线 210a连接。此设计除了可以大幅减少数据线 220 的布局数量外,亦可有效提升开口率,以使画面显示亮度得到明显的提升。 另外, 本实施例的像素 230基本上可算是位于同一列上, 且由第一子像素 310与第二子像素 320所组成的每一像素 230基本上呈现矩形, 因此相较 于现有的像素阵列 100而言, 本实施例可有效提升画面的色彩表现能力。  In addition, since the pixel array 200a of the present embodiment designs the scan line 210 in a zigzag layout manner, the first sub-pixel 310 and the second sub-pixel 320 connected to the same data line 220a are disposed on the data line 220a. On both sides. At the same time, the first gate 312b of the first transistor 312 located in the same pixel 230 is connected to the second scan line 210b, and the second gate 322b of the second transistor 322 is connected to the first scan line 210a. In addition to greatly reducing the number of layouts of the data lines 220, this design can also effectively increase the aperture ratio, so that the brightness of the screen display is significantly improved. In addition, the pixels 230 of the embodiment are basically located on the same column, and each of the pixels 230 composed of the first sub-pixel 310 and the second sub-pixel 320 is substantially rectangular, and thus compared with the existing pixels. For the array 100, the embodiment can effectively improve the color rendering capability of the picture.
图 3A为本发明一实施例的一种像素阵列的示意图。 图 3B为沿图 3A 的线 A-A,以及线 B-B'的剖面示意图。 请同时参考图 3A与图 3B , 本实施例 的像素阵列 200c与上述像素阵列 200a相似。本实施例的像素阵列 200c中, 缩减相邻像素之间的间隙 D, 如此一来, 在相同的布局空间中, 由于相邻 像素间的间隙 D变小,因此像素的面积即可增大 ,进而增加像素的开口率。 此外, 在本实施例高开口率的像素阵列 200c中, 具有高覆盖特性的介电层 240还覆盖于第一晶体管 312"与第二晶体管 322"上,且介电层 240亦可视 为一平坦层 (overcoating ), 因此第一像素电极 314"与第二像素电极 324" 的布局可进一步延伸至对应扫描线 210的上方, 以进一步提高像素的开口 率。值得注意的是,在本实施例中,第一像素电极 314"与第二像素电极 324" 仅绘示覆盖部分第 n条扫描线以及第(n+1)条扫描线。 然而, 在其他实施例 中, 请参考图 3C , 第一像素电极 314' "与第二像素电极 324",亦可覆盖整 个第一子像素 310"'与第二子像素 320" '的周围。  FIG. 3A is a schematic diagram of a pixel array according to an embodiment of the invention. Fig. 3B is a schematic cross-sectional view taken along line A-A of Fig. 3A, and line BB'. Referring to FIG. 3A and FIG. 3B simultaneously, the pixel array 200c of the present embodiment is similar to the above-described pixel array 200a. In the pixel array 200c of the present embodiment, the gap D between adjacent pixels is reduced, so that in the same layout space, since the gap D between adjacent pixels becomes smaller, the area of the pixel can be increased. In turn, the aperture ratio of the pixel is increased. In addition, in the high aperture ratio pixel array 200c of the present embodiment, the dielectric layer 240 having high coverage characteristics is also over the first transistor 312" and the second transistor 322", and the dielectric layer 240 can also be regarded as a The flat layer is overcoated, so the layout of the first pixel electrode 314" and the second pixel electrode 324" may further extend above the corresponding scan line 210 to further increase the aperture ratio of the pixel. It is to be noted that in the present embodiment, the first pixel electrode 314" and the second pixel electrode 324" only show the nth scanning line and the (n+1)th scanning line. However, in other embodiments, referring to FIG. 3C, the first pixel electrode 314'" and the second pixel electrode 324" may also cover the entire first sub-pixel 310"' and the second sub-pixel 320"'.
为了进一步增进第一子像素 310"与第二子像素 320"的储存电容, 第 一子像素 310,,还包括一第一电容电极 316 ,而第二子像素 320,,还包括一第 二电容电极 326。详细来说,第一电容电极 316电性连接第一像素电极 314" , 且第一电容电极 316与上一条扫描线 210(即第 n条扫描线 210 )部分重叠, 以构成一第一储存电容 Cl, 即第一储存电容 C1 的下电极为部分上一条扫 描线 210 , 其上电极为第一电容电极 316 , 且上电极与数据线 220属同一膜 层。 第二电容电极 326电性连接第二像素电极 324", 且第二电容电极 326 与上一条扫描线 210 (即第(n-1)扫描线 210 )部分重叠, 以构成一第二储存 电容 C2 , 即第二储存电容 C2的下电极为部分上一条扫描线 210 , 其上电 极为第二电容电极 326, 且上电极与数据线 220属同一膜层。 详言之, 请 继续参照图 3A与图 3B , 在第 n列中的第一子像素 310"中, 第一像素电极 314"透过介电层 240的第一接触窗 242而与第一晶体管 312"电性连接,并 透过介电层 240的第二接触窗 244而与第一电容电极 316电性连接。 在实 际的运作机制上, 施加一开启电压电平于第(n+1)条扫描线 210 (即第二扫 描线 210b )以开启第一晶体管 312" ,接着自数据线 220a输入一数据电压, 此数据电压经由开启的第一晶体管 312,,以及介电层 240的第一接触窗 242 传递至第一像素电极 314"上。并且,具有该数据电压的第一像素电极 314" 透过介电层 240的第二接触窗 244而将此数据电压传递至第一电容电极 316, 使得第一像素电极 314"与第一电容电极 316等电位,因此第(n+1)条扫描线 210 (即第二扫描线 210b )、 第一电容电极 316 以及位于第(n+1)条扫描线 210 (即第二扫描线 210b ) 与第一电容电极 316之间的闸绝缘层 318共同 构成第一子像素 310"的第一储存电容 C1 , 而第一储存电容 C1用以在第一 晶体管 312"关闭的其间稳定第一像素电极 314"的数据电压, 提升显示品 质。如此一来,第一子像素 310"可兼具高开口率以及高储存电容值。同理, 第二子像素 320"的运作机制与第一子像素 310"类似, 不再赘述。 In order to further enhance the storage capacitance of the first sub-pixel 310" and the second sub-pixel 320", A sub-pixel 310 further includes a first capacitor electrode 316, and the second sub-pixel 320 further includes a second capacitor electrode 326. In detail, the first capacitor electrode 316 is electrically connected to the first pixel electrode 314 ′′, and the first capacitor electrode 316 partially overlaps with the previous scan line 210 (ie, the nth scan line 210 ) to form a first storage capacitor. Cl, that is, the lower electrode of the first storage capacitor C1 is a portion of the upper scan line 210, the upper electrode is the first capacitor electrode 316, and the upper electrode and the data line 220 belong to the same film layer. The second capacitor electrode 326 is electrically connected. a second pixel electrode 324", and the second capacitor electrode 326 partially overlaps with the previous scan line 210 (ie, the (n-1)th scan line 210) to form a second storage capacitor C2, that is, the second storage capacitor C2. The electrode is a portion of the upper scan line 210, the upper electrode is the second capacitor electrode 326, and the upper electrode and the data line 220 are in the same film layer. In detail, referring to FIG. 3A and FIG. 3B, in the first sub-pixel 310" in the nth column, the first pixel electrode 314" passes through the first contact window 242 of the dielectric layer 240 and the first transistor. 312" is electrically connected and electrically connected to the first capacitor electrode 316 through the second contact window 244 of the dielectric layer 240. In actual operation, an opening voltage level is applied to the (n+1)th a scan line 210 (ie, a second scan line 210b) to turn on the first transistor 312", and then input a data voltage from the data line 220a, the data voltage is passed through the first transistor 312 that is turned on, and the first of the dielectric layer 240 The contact window 242 is transferred to the first pixel electrode 314". And the first pixel electrode 314" having the data voltage transmits the data voltage to the first capacitor electrode 316 through the second contact window 244 of the dielectric layer 240. So that the first pixel electrode 314" is equipotential to the first capacitor electrode 316, so the (n+1)th scan line 210 (ie, the second scan line 210b), the first capacitor electrode 316, and the (n+1)th a gate insulating layer 31 between the strip scan line 210 (ie, the second scan line 210b) and the first capacitor electrode 316 8 collectively constitutes a first storage capacitor C1 of the first sub-pixel 310", and the first storage capacitor C1 is used to stabilize the data voltage of the first pixel electrode 314" during the first transistor 312" off, thereby improving display quality. In this way, the first sub-pixel 310" can have both a high aperture ratio and a high storage capacitance value. Similarly, the operation mechanism of the second sub-pixel 320" is similar to that of the first sub-pixel 310", and will not be described again.
综上所述, 本发明的像素阵列将扫描线设计为曲折的布局方式, 并将 与同一数据线连接的第一子像素与第二子像素皆配置于该条数据线的两侧。 同时, 将位于同一像素中的第一晶体管的第一栅极与第(n+1)条扫描线连接, 将第二晶体管的第二栅极与第 n条扫描线连接。 因此, 本发明的像素阵列 的设计除了可以大幅减少数据线的布局数量, 以有效提升开口率使画面显 示亮度得到明显的提升外, 亦可提高显示器的色彩表现能力。 另外, 由于 晶体管的漏极往对应的像素电极的延伸方向皆相同, 因此当于制作晶体管 上膜层之间有对位偏差时, 整体像素中的栅极-漏极寄生电容 (Cgd ) 的差 异小。 如此一来, 本发明的像素阵列应用于显示器时有助于提高显示器的 显示均匀性, 即可以避免产生闪烁 (flicker ) 而造成亮度不均匀的问题。 In summary, the pixel array of the present invention designs the scan lines in a zigzag layout manner, and the first sub-pixels and the second sub-pixels connected to the same data line are disposed on both sides of the data line. At the same time, the first gate of the first transistor located in the same pixel is connected to the (n+1)th scan line, and the second gate of the second transistor is connected to the nth scan line. Therefore, in addition to substantially reducing the number of layouts of the data lines, the pixel array of the present invention can effectively increase the aperture ratio to significantly improve the brightness of the screen display, and can also improve the color performance of the display. In addition, since the drains of the transistors extend to the corresponding pixel electrodes, the difference in gate-drain parasitic capacitance (Cgd) in the overall pixel is obtained when there is a registration deviation between the layers on the transistor. small. In this way, when the pixel array of the present invention is applied to a display, it helps to improve the display uniformity of the display, thereby avoiding the problem of unevenness of brightness caused by flicker.
在上述实施例中, 仅对本发明进行了示范性描述, 但是本领域技术人员在 阅读本专利申请后可以在不脱离本发明的精神和范围的情况下对本发明进行各 种修改。  In the above-described embodiments, the present invention has been exemplarily described, and various modifications of the present invention can be made without departing from the spirit and scope of the invention.

Claims

权 利 要 求 Rights request
1 .一种像素阵列, 其特征在于, 该像素阵列包括: What is claimed is: 1 . A pixel array, wherein the pixel array comprises:
多条扫描线, 沿着列方向曲折延伸;  a plurality of scanning lines extending in a zigzag direction along the column direction;
多条数据线, 沿着行方向延伸并与该多条扫描线相交;  a plurality of data lines extending along the row direction and intersecting the plurality of scan lines;
多个像素, 与该多条扫描线以及该多条数据线连接, 排列于第 n列中 的各该像素包括:  a plurality of pixels connected to the plurality of scan lines and the plurality of data lines, and each of the pixels arranged in the nth column includes:
一第一子像素, 包括一第一晶体管与一第一像素电极, 其中该第一晶 体管的一第一栅极与第(n+1)条扫描线连接, 而该第一晶体管的一第一漏极 与该第一像素电极连接; 以及  a first sub-pixel includes a first transistor and a first pixel electrode, wherein a first gate of the first transistor is connected to the (n+1)th scan line, and a first one of the first transistor a drain connected to the first pixel electrode;
一第二子像素, 包括一第二晶体管与一第二像素电极, 其中该第二晶 体管的一第二栅极与第 "条扫描线连接, 该第二晶体管的一第二漏极与该 第二像素电极连接, 该第一晶体管的一第一源极以及该第二晶体管的一第 二源极连接至该多条数据线中的同一条数据线。  a second sub-pixel includes a second transistor and a second pixel electrode, wherein a second gate of the second transistor is coupled to the “scanning line, and a second drain of the second transistor The two pixel electrodes are connected, a first source of the first transistor and a second source of the second transistor are connected to the same one of the plurality of data lines.
2.根据权利要求 1 所述的像素阵列, 其中该第一晶体管与该第二晶体 管的布局型态是以对应的扫描线为基准向上凸出的型态。  The pixel array according to claim 1, wherein a layout pattern of the first transistor and the second transistor is upwardly convex based on a corresponding scan line.
3.根据权利要求 1 所述的像素阵列, 其中该第一晶体管与该第二晶体 管的布局型态是以对应的扫描线为基准向下凸出的型态。  The pixel array according to claim 1, wherein a layout pattern of the first transistor and the second transistor is a downward convex shape based on a corresponding scan line.
4.根据权利要求 1 所述的像素阵列, 其中在排列于同一列的像素中, 该多个第一晶体管与该多个第二晶体管位于该列像素的同一侧。  4. The pixel array of claim 1, wherein the plurality of first transistors and the plurality of second transistors are located on a same side of the column of pixels in pixels arranged in the same column.
5.根据权利要求 1 所述的像素阵列, 其中每一第一像素电极或每一第 二像素电极的三个侧边被对应的上一条扫描线围绕。  The pixel array according to claim 1, wherein three sides of each of the first pixel electrodes or each of the second pixel electrodes are surrounded by a corresponding one of the scanning lines.
6. 根据权利要求 5 所述的像素阵列, 其中每一扫描线在像素阵列上呈 一方波形。  6. The pixel array of claim 5, wherein each of the scan lines has a one-sided waveform on the pixel array.
7.根据权利要求 1所述的像素阵列, 其中各该扫描线包括:  7. The pixel array of claim 1, wherein each of the scan lines comprises:
多个第一导线, 沿着该列方向延伸; 以及 多个第二导线, 沿着该行方向延伸, a plurality of first wires extending along the column direction; a plurality of second wires extending along the row direction,
其中, 该多个第一导线与该多个第二导线交替地连接。  The plurality of first wires are alternately connected to the plurality of second wires.
8.根据权利要求 7 所述的像素阵列, 其中部分该多个第二导线被该第 一像素电极或该第二像素电极其中之一覆盖。  The pixel array according to claim 7, wherein a portion of the plurality of second wires are covered by one of the first pixel electrode or the second pixel electrode.
9.根据权利要求 7 所述的像素阵列, 其中该多个第二导线位于同一像 素中的该第一子像素与该第二子像素之间以及相邻两像素之间。  9. The pixel array of claim 7, wherein the plurality of second wires are located between the first sub-pixel and the second sub-pixel in the same pixel and between adjacent two pixels.
10.根据权利要求 7所述的像素阵列, 其中各该第一导线的长度实质上 大于等于其中一个像素电极的宽度, 而各该第二导线的长度实质上大于等 于其中一个像素电极的长度。  10. The pixel array of claim 7, wherein each of the first wires has a length substantially greater than or equal to a width of one of the pixel electrodes, and each of the second wires has a length substantially greater than a length of one of the pixel electrodes.
11.根据权利要求 7所述的像素阵列, 其中各该扫描线还包括: 多个第一分支, 连接部分该多个第一导线且沿着该行方向延伸; 以及 多个第二分支, 连接部分该多个第一导线且沿着该行方向延伸, 其中, 该多个第一分支与该多个第二分支实质上平行于该多个第二导 线。  The pixel array according to claim 7, wherein each of the scan lines further comprises: a plurality of first branches connecting the plurality of first wires and extending along the row direction; and a plurality of second branches, connecting And a portion of the plurality of first wires extending along the row direction, wherein the plurality of first branches and the plurality of second branches are substantially parallel to the plurality of second wires.
12.如申请专利范围第 11 项所述的像素阵列, 其中位于同一像素中的 部分该第一分支与部分该第二分支被该第二像素电极覆盖。  12. The pixel array of claim 11, wherein the portion of the first branch and the portion of the second branch are covered by the second pixel electrode.
13.根据权利要求 1所述的像素阵列, 其中与同一条数据线连接的像素 分布于该条数据线的两侧。  The pixel array according to claim 1, wherein pixels connected to the same data line are distributed on both sides of the data line.
14.根据权利要求 1 所述的像素阵列, 其中在排列于同一列的像素中, 位于偶数行的部分像素与其中一条扫描线连接, 而位于奇数行的部分像素 与另一条扫描线连接。  The pixel array according to claim 1, wherein among the pixels arranged in the same column, the partial pixels located in the even rows are connected to one of the scanning lines, and the partial pixels located in the odd rows are connected to the other scanning line.
15.根据权利要求 1所述的像素阵列, 其中在排列于第 n列的各该像素 中, 该第一晶体管与该第二晶体管分别具有一第一通道层以及一第二通道 层, 该第一通道层位于第 + 7条扫描线上方, 该第二通道层位于第《条扫 描线上方, 该第一漏极自该第一通道层沿着一第一方向与该第一像素电极 连接,该第二漏极自该第二通道层沿着一第二方向与该第二像素电极连接, 且该第一方向与该第二方向相同。 The pixel array of claim 1 , wherein in each of the pixels arranged in the nth column, the first transistor and the second transistor respectively have a first channel layer and a second channel layer, the first a channel layer is located above the +7th scan line, and the second channel layer is located above the first scan line, the first drain is connected to the first pixel electrode from the first channel layer along a first direction, The second drain is connected to the second pixel electrode from the second channel layer along a second direction. And the first direction is the same as the second direction.
16.根据权利要求 1所述的像素阵列,其中在排列于同一列的像素中, 该多个第一与第二子像素的中心点的连线趋近于同一条直线。  The pixel array according to claim 1, wherein in the pixels arranged in the same column, the lines connecting the center points of the plurality of first and second sub-pixels are close to the same straight line.
17.根据权利要求 1所述的像素阵列, 其中在各该像素中, 该第一晶体 管的形状与该第二晶体管的形状为以该数据线为基准呈镜像的形式。  The pixel array according to claim 1, wherein in each of the pixels, a shape of the first transistor and a shape of the second transistor are in a form of a mirror image based on the data line.
18.根据权利要求 1所述的像素阵列, 其中该第一子像素还包括一第一 电容电极, 电性连接该第一像素电极, 且该第一电容电极与该数据线属同 一膜层并与上一条扫描线部分重叠, 以构成一第一储存电容, 而该第二子 像素还包括一第二电容电极, 电性连接该第二像素电极, 且该第二电容电 极与该数据线属同一膜层并与上一条扫描线部分重叠, 以构成一第二储存 电容。  The pixel array of claim 1 , wherein the first sub-pixel further comprises a first capacitor electrode electrically connected to the first pixel electrode, and the first capacitor electrode and the data line are in the same film layer And partially overlapping with the previous scan line to form a first storage capacitor, and the second sub-pixel further includes a second capacitor electrode electrically connected to the second pixel electrode, and the second capacitor electrode and the data line are The same film layer partially overlaps with the previous scan line to form a second storage capacitor.
PCT/CN2009/075749 2009-11-18 2009-12-21 Pixel array WO2011060595A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/868,710 US8018399B2 (en) 2009-11-18 2010-08-25 Pixel array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200910224497.4 2009-11-18
CN2009102244974A CN101710477B (en) 2009-11-18 2009-11-18 Pixel array

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/868,710 Continuation US8018399B2 (en) 2009-11-18 2010-08-25 Pixel array

Publications (1)

Publication Number Publication Date
WO2011060595A1 true WO2011060595A1 (en) 2011-05-26

Family

ID=42403260

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2009/075749 WO2011060595A1 (en) 2009-11-18 2009-12-21 Pixel array

Country Status (2)

Country Link
CN (1) CN101710477B (en)
WO (1) WO2011060595A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103235452B (en) * 2013-03-29 2016-06-08 合肥京东方光电科技有限公司 A kind of array base palte and display device
TWI609214B (en) * 2017-01-06 2017-12-21 友達光電股份有限公司 Pixel structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6583777B2 (en) * 1998-05-07 2003-06-24 Alps Electric Co., Ltd. Active matrix type liquid crystal display device, and substrate for the same
CN100399176C (en) * 2006-04-21 2008-07-02 友达光电股份有限公司 LCD device
CN101315937A (en) * 2007-05-29 2008-12-03 中华映管股份有限公司 Array of pixels

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6583777B2 (en) * 1998-05-07 2003-06-24 Alps Electric Co., Ltd. Active matrix type liquid crystal display device, and substrate for the same
CN100399176C (en) * 2006-04-21 2008-07-02 友达光电股份有限公司 LCD device
CN101315937A (en) * 2007-05-29 2008-12-03 中华映管股份有限公司 Array of pixels

Also Published As

Publication number Publication date
CN101710477A (en) 2010-05-19
CN101710477B (en) 2012-06-20

Similar Documents

Publication Publication Date Title
JP3036512B2 (en) Liquid crystal display
TWI609219B (en) Pixel unit, pixel-array structure, and display panel
EP3453051B1 (en) Curved display panel, curved display apparatus, and fabricating method thereof
KR101352113B1 (en) Liquid Crystal Display Panel Of Horizontal Electronic Fileld Applying Type and Method of Fabricating the same
US6897930B2 (en) Display device
JP6892065B2 (en) Display panel
US8842248B2 (en) Display device
US8018399B2 (en) Pixel array
US8766268B2 (en) Thin film transistor array panel
TW201622112A (en) Display panel
US9245488B2 (en) Thin film transistor array panel having improved flicker and cross-talk characteristics
JP7302040B2 (en) Pixel structure, array substrate and display panel
JP2015099296A (en) Display element
KR100277001B1 (en) Reflective Liquid Crystal Display
US10001688B2 (en) Display and pixel structure thereof
CN105824160B (en) Display panel
US7764342B2 (en) Liquid crystal display apparatus
WO2011060595A1 (en) Pixel array
TWI416230B (en) Pixel array
US20160216543A1 (en) Liquid crystal display device
US8665405B2 (en) Thin film transistor array panel
KR20070080143A (en) A liquid crystal display device
CN114137769A (en) Array substrate, display device and array substrate manufacturing method
JP3738329B2 (en) Liquid crystal display
KR20080024963A (en) Liquid crystal display

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09851387

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09851387

Country of ref document: EP

Kind code of ref document: A1