WO2009151665A3 - Methods and devices for processing a precursor layer in a group via environment - Google Patents

Methods and devices for processing a precursor layer in a group via environment Download PDF

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Publication number
WO2009151665A3
WO2009151665A3 PCT/US2009/036083 US2009036083W WO2009151665A3 WO 2009151665 A3 WO2009151665 A3 WO 2009151665A3 US 2009036083 W US2009036083 W US 2009036083W WO 2009151665 A3 WO2009151665 A3 WO 2009151665A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
devices
precursor layer
processing
group via
Prior art date
Application number
PCT/US2009/036083
Other languages
French (fr)
Other versions
WO2009151665A2 (en
Inventor
Brent Bollman
Craig R. Leidholm
Nathaniel Stanley
Matthew Rail
Original Assignee
Brent Bollman
Leidholm Craig R
Nathaniel Stanley
Matthew Rail
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brent Bollman, Leidholm Craig R, Nathaniel Stanley, Matthew Rail filed Critical Brent Bollman
Priority to EP09762961A priority Critical patent/EP2266145A2/en
Publication of WO2009151665A2 publication Critical patent/WO2009151665A2/en
Publication of WO2009151665A3 publication Critical patent/WO2009151665A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA- chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in one or more steps in a VIA environment.
PCT/US2009/036083 2008-03-04 2009-03-04 Methods and devices for processing a precursor layer in a group via environment WO2009151665A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09762961A EP2266145A2 (en) 2008-03-04 2009-03-04 Methods and devices for processing a precursor layer in a group via environment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3377208P 2008-03-04 2008-03-04
US61/033,772 2008-03-04

Publications (2)

Publication Number Publication Date
WO2009151665A2 WO2009151665A2 (en) 2009-12-17
WO2009151665A3 true WO2009151665A3 (en) 2010-03-04

Family

ID=41417307

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/036083 WO2009151665A2 (en) 2008-03-04 2009-03-04 Methods and devices for processing a precursor layer in a group via environment

Country Status (2)

Country Link
EP (1) EP2266145A2 (en)
WO (1) WO2009151665A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009011496A1 (en) * 2009-03-06 2010-09-16 Centrotherm Photovoltaics Ag Process and device for the thermal conversion of metallic precursor layers into semiconducting layers with chalcogen recovery
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
FR2964044B1 (en) * 2010-08-26 2012-09-14 Commissariat Energie Atomique LIQUID METAL EMULSION
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
TWI449193B (en) * 2012-12-21 2014-08-11 Ind Tech Res Inst Method for forming an absorptive layer of a solar cell and thermal treatment device thereof
NL2010809C2 (en) 2013-05-16 2014-11-24 Smit Ovens Bv DEVICE AND METHOD FOR APPLYING A MATERIAL TO A SUBSTRATE.

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985691A (en) * 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
US20050266600A1 (en) * 2001-04-16 2005-12-01 Basol Bulent M Low temperature nano particle preparation and deposition for phase-controlled compound film formation
US20070163642A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985691A (en) * 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
US20050266600A1 (en) * 2001-04-16 2005-12-01 Basol Bulent M Low temperature nano particle preparation and deposition for phase-controlled compound film formation
US20070163642A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles

Also Published As

Publication number Publication date
WO2009151665A2 (en) 2009-12-17
EP2266145A2 (en) 2010-12-29

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