WO2009143126A3 - Integrated circuit package having integrated faraday shield - Google Patents

Integrated circuit package having integrated faraday shield Download PDF

Info

Publication number
WO2009143126A3
WO2009143126A3 PCT/US2009/044480 US2009044480W WO2009143126A3 WO 2009143126 A3 WO2009143126 A3 WO 2009143126A3 US 2009044480 W US2009044480 W US 2009044480W WO 2009143126 A3 WO2009143126 A3 WO 2009143126A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
packaged
integrated
layers
integrated circuit
Prior art date
Application number
PCT/US2009/044480
Other languages
French (fr)
Other versions
WO2009143126A2 (en
Inventor
Stanley Craig Beddingfield
Jean-Francois Drouard
Original Assignee
Texas Instruments Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Incorporated filed Critical Texas Instruments Incorporated
Priority to CN2009801025126A priority Critical patent/CN101919053B/en
Publication of WO2009143126A2 publication Critical patent/WO2009143126A2/en
Publication of WO2009143126A3 publication Critical patent/WO2009143126A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06517Bump or bump-like direct electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/0652Bump or bump-like direct electrical connections from substrate to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06572Auxiliary carrier between devices, the carrier having an electrical connection structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1041Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • H01L2225/1058Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1076Shape of the containers
    • H01L2225/1088Arrangements to limit the height of the assembly
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Abstract

A packaged integrated circuit (IC) (100) includes a first substrate (110) comprising a first plurality of layers and a first circuit coupling features (112) at an upper surface of the first substrate, the first plurality of layers including a first electromagnetic interference shielding layer (132). The packaged IC also includes a second substrate (106) having an upper surface attached to a lower surface of the first substrate by an electrically conductive adhesive material (136). The second substrate includes a second plurality of layers and a second circuit coupling feature (108) at a lower surface of the second substrate. The first plurality of layer includes a second EMI shielding layer (134). The packaged IC further includes a functional die (124) disposed between the first and the second substrates and functionally coupled to the first and/or the second circuit coupling features. In the packaged IC, the adhesive material electrically couples the first and the second shielding layers.
PCT/US2009/044480 2008-05-19 2009-05-19 Integrated circuit package having integrated faraday shield WO2009143126A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009801025126A CN101919053B (en) 2008-05-19 2009-05-19 Integrated circuit package having integrated faraday shield

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/123,115 US7741567B2 (en) 2008-05-19 2008-05-19 Integrated circuit package having integrated faraday shield
US12/123,115 2008-05-19

Publications (2)

Publication Number Publication Date
WO2009143126A2 WO2009143126A2 (en) 2009-11-26
WO2009143126A3 true WO2009143126A3 (en) 2010-02-25

Family

ID=41315961

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/044480 WO2009143126A2 (en) 2008-05-19 2009-05-19 Integrated circuit package having integrated faraday shield

Country Status (4)

Country Link
US (2) US7741567B2 (en)
CN (1) CN101919053B (en)
TW (1) TW201013882A (en)
WO (1) WO2009143126A2 (en)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200836315A (en) * 2007-02-16 2008-09-01 Richtek Techohnology Corp Electronic package structure and method thereof
US8071935B2 (en) * 2008-06-30 2011-12-06 Nellcor Puritan Bennett Llc Optical detector with an overmolded faraday shield
US8378383B2 (en) * 2009-03-25 2013-02-19 Stats Chippac, Ltd. Semiconductor device and method of forming a shielding layer between stacked semiconductor die
US8742869B2 (en) * 2010-03-16 2014-06-03 K&L Microwave, Inc. Low passive inter-modulation capacitor
JP5229276B2 (en) * 2010-06-11 2013-07-03 株式会社村田製作所 Circuit module
US8409918B2 (en) 2010-09-03 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of forming pre-molded substrate to reduce warpage during die mounting
US8564111B2 (en) * 2011-01-27 2013-10-22 Siano Mobile Silicon Ltd. Stacked digital/RF system-on-chip with integral isolation layer
US8508045B2 (en) 2011-03-03 2013-08-13 Broadcom Corporation Package 3D interconnection and method of making same
US9064781B2 (en) 2011-03-03 2015-06-23 Broadcom Corporation Package 3D interconnection and method of making same
EP2514713B1 (en) * 2011-04-20 2013-10-02 Tronics Microsystems S.A. A micro-electromechanical system (MEMS) device
US8698297B2 (en) 2011-09-23 2014-04-15 Stats Chippac Ltd. Integrated circuit packaging system with stack device
US8716065B2 (en) 2011-09-23 2014-05-06 Stats Chippac Ltd. Integrated circuit packaging system with encapsulation and method of manufacture thereof
US8664717B2 (en) 2012-01-09 2014-03-04 Globalfoundries Inc. Semiconductor device with an oversized local contact as a Faraday shield
KR101798571B1 (en) 2012-02-16 2017-11-16 삼성전자주식회사 Semiconductor Packages
US20130322029A1 (en) * 2012-05-30 2013-12-05 Dror Hurwitz Multilayer electronic structure with integral faraday shielding
TW201351599A (en) 2012-06-04 2013-12-16 矽品精密工業股份有限公司 Semiconductor package and fabrication method thereof
JP5959097B2 (en) 2012-07-03 2016-08-02 ルネサスエレクトロニクス株式会社 Semiconductor device
KR20140023112A (en) 2012-08-17 2014-02-26 삼성전자주식회사 Electronic device having a semiconductor package and method of manufacturing the same
US9818734B2 (en) 2012-09-14 2017-11-14 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming build-up interconnect structures over a temporary substrate
US10192796B2 (en) 2012-09-14 2019-01-29 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming dual-sided interconnect structures in FO-WLCSP
US9443797B2 (en) * 2012-09-14 2016-09-13 STATS ChipPAC Pte. Ltd. Semiconductor device having wire studs as vertical interconnect in FO-WLP
US9064868B2 (en) 2012-10-12 2015-06-23 Globalfoundries Inc. Advanced faraday shield for a semiconductor device
DE102012219661A1 (en) 2012-10-26 2014-04-30 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Individualized power supply of integrated circuit devices as protection against side channel attacks
KR20140057979A (en) * 2012-11-05 2014-05-14 삼성전자주식회사 Semiconductor package and method of manufacturing the semiconductor package
TWI550816B (en) 2013-01-08 2016-09-21 矽品精密工業股份有限公司 Package substrate and fabrication method thereof
KR101983142B1 (en) * 2013-06-28 2019-08-28 삼성전기주식회사 Semiconductor package
KR102163707B1 (en) * 2013-11-14 2020-10-08 에스케이하이닉스 주식회사 Semiconductor package having EMI shielding layer and method of testing the same
KR101538573B1 (en) 2014-02-05 2015-07-21 앰코 테크놀로지 코리아 주식회사 Manufacturing method of semiconductor device and semiconductor device thereof
US9364187B2 (en) * 2014-05-03 2016-06-14 General Electric Company Packaging design for CT detector
US20150340308A1 (en) * 2014-05-21 2015-11-26 Broadcom Corporation Reconstituted interposer semiconductor package
TWI553817B (en) * 2014-06-17 2016-10-11 瑞昱半導體股份有限公司 Integrated circuit having electromagnetic shielding capability and manufacturing method thereof
SG11201610172WA (en) * 2014-07-07 2017-01-27 Intel Ip Corp Package-on-package stacked microelectronic structures
TWI654723B (en) * 2015-02-06 2019-03-21 矽品精密工業股份有限公司 Method of manufacturing package structure
US9379090B1 (en) * 2015-02-13 2016-06-28 Qualcomm Incorporated System, apparatus, and method for split die interconnection
US9893017B2 (en) 2015-04-09 2018-02-13 STATS ChipPAC Pte. Ltd. Double-sided semiconductor package and dual-mold method of making same
TWI621378B (en) 2015-07-29 2018-04-11 乾坤科技股份有限公司 Electronic module with electromagnetic shielding structure and manufacturing method of same
US10607958B2 (en) * 2015-08-28 2020-03-31 Texas Instruments Incorporated Flip chip backside die grounding techniques
WO2017111952A1 (en) * 2015-12-22 2017-06-29 Intel Corporation Ultra small molded module integrated with die by module-on-wafer assembly
TWI783910B (en) * 2016-01-15 2022-11-21 荷蘭商庫力克及索發荷蘭公司 Placing ultra-small or ultra-thin discrete components
CN108701680B (en) * 2016-03-31 2023-05-30 英特尔公司 Semiconductor package with electromagnetic interference shielding using metal layers and vias
KR101983185B1 (en) * 2016-08-19 2019-05-29 삼성전기주식회사 Fan-out semiconductor package
US10332843B2 (en) 2016-08-19 2019-06-25 Samsung Electro-Mechanics Co., Ltd. Fan-out semiconductor package
KR102004801B1 (en) 2016-11-17 2019-07-29 삼성전기주식회사 Fan-out semiconductor package
WO2018123699A1 (en) * 2016-12-27 2018-07-05 株式会社村田製作所 High-frequency module
US10134716B2 (en) * 2017-03-16 2018-11-20 Intel Corporatin Multi-package integrated circuit assembly with through-mold via
US10177095B2 (en) * 2017-03-24 2019-01-08 Amkor Technology, Inc. Semiconductor device and method of manufacturing thereof
US10453762B2 (en) 2017-07-28 2019-10-22 Micron Technology, Inc. Shielded fan-out packaged semiconductor device and method of manufacturing
TWI787448B (en) 2018-02-01 2022-12-21 德商漢高股份有限及兩合公司 Method for shielding system-in-package assemblies from electromagnetic interference
DE102018204625A1 (en) * 2018-03-27 2019-10-02 Siemens Aktiengesellschaft Housing for an inverter, power amplifier of an inverter with such a housing, inverter and aircraft with an inverter
TWI647796B (en) * 2018-04-09 2019-01-11 矽品精密工業股份有限公司 Electronic package and its manufacturing method
US10910323B2 (en) * 2018-08-20 2021-02-02 Mediatek Inc. Semiconductor package with reduced noise
JP7236269B2 (en) * 2018-12-26 2023-03-09 新光電気工業株式会社 Wiring board, semiconductor device, and wiring board manufacturing method
CN113474860A (en) * 2019-02-26 2021-10-01 德克萨斯仪器股份有限公司 Isolation transformer with integrated shielding topology for reduced EMI
US11373959B2 (en) * 2019-04-19 2022-06-28 Skyworks Solutions, Inc. Shielding for flip chip devices
US11355450B2 (en) 2019-08-01 2022-06-07 Mediatek Inc. Semiconductor package with EMI shielding structure
DE102019126028A1 (en) * 2019-09-26 2021-04-01 Robert Bosch Gmbh Multichip arrangement and corresponding manufacturing process
CN113496990B (en) * 2020-04-01 2023-10-20 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof
US11830821B2 (en) 2020-10-19 2023-11-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture
WO2022236787A1 (en) * 2021-05-13 2022-11-17 华为技术有限公司 Chip packaging structure and packaging system
CN113508464A (en) * 2021-06-08 2021-10-15 长江存储科技有限责任公司 Electromagnetic interference shielding packaging structure and manufacturing method thereof
US11710708B2 (en) 2021-08-19 2023-07-25 Raytheon Company On-chip EMF isolation of an integrated circuit coupled with photoconductive semiconductor switch under an on-chip faraday cage

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060102992A1 (en) * 2004-11-17 2006-05-18 Heung-Kyu Kwon Multi-chip package
US7176506B2 (en) * 2001-08-28 2007-02-13 Tessera, Inc. High frequency chip packages with connecting elements
US20070296087A1 (en) * 2006-02-21 2007-12-27 Seiko Epson Corporation Semiconductor device and method for manufacturing semiconductor device
US20080036096A1 (en) * 2002-09-17 2008-02-14 Marcos Karnezos Semiconductor Multi-Package Module Having Package Stacked Over Die-Up Flip Chip Ball Grid Array Package and Having Wire Bond Interconnect Between Stacked Packages

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136128A (en) * 1998-06-23 2000-10-24 Amerasia International Technology, Inc. Method of making an adhesive preform lid for electronic devices
US6618267B1 (en) * 1998-09-22 2003-09-09 International Business Machines Corporation Multi-level electronic package and method for making same
US7102892B2 (en) * 2000-03-13 2006-09-05 Legacy Electronics, Inc. Modular integrated circuit chip carrier
US6515870B1 (en) * 2000-11-27 2003-02-04 Intel Corporation Package integrated faraday cage to reduce electromagnetic emissions from an integrated circuit
US7215022B2 (en) * 2001-06-21 2007-05-08 Ati Technologies Inc. Multi-die module
TWI235469B (en) * 2003-02-07 2005-07-01 Siliconware Precision Industries Co Ltd Thermally enhanced semiconductor package with EMI shielding
US7191516B2 (en) * 2003-07-16 2007-03-20 Maxwell Technologies, Inc. Method for shielding integrated circuit devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7176506B2 (en) * 2001-08-28 2007-02-13 Tessera, Inc. High frequency chip packages with connecting elements
US20080036096A1 (en) * 2002-09-17 2008-02-14 Marcos Karnezos Semiconductor Multi-Package Module Having Package Stacked Over Die-Up Flip Chip Ball Grid Array Package and Having Wire Bond Interconnect Between Stacked Packages
US20060102992A1 (en) * 2004-11-17 2006-05-18 Heung-Kyu Kwon Multi-chip package
US20070296087A1 (en) * 2006-02-21 2007-12-27 Seiko Epson Corporation Semiconductor device and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
US20100214759A1 (en) 2010-08-26
TW201013882A (en) 2010-04-01
US7741567B2 (en) 2010-06-22
CN101919053A (en) 2010-12-15
US8049119B2 (en) 2011-11-01
WO2009143126A2 (en) 2009-11-26
CN101919053B (en) 2013-02-13
US20090284947A1 (en) 2009-11-19

Similar Documents

Publication Publication Date Title
WO2009143126A3 (en) Integrated circuit package having integrated faraday shield
WO2008018959A3 (en) Overmolded semiconductor package with a wirebond cage for emi shielding
SG153729A1 (en) Integrated circuit package system for shielding electromagnetic interference
CN103943610B (en) A kind of electronic element packaging structure and electronic equipment
WO2010027890A3 (en) Mainboard assembly including a package overlying a die directly attached to the mainboard
EP2096671A4 (en) Adhesive tape and semiconductor device using the same
WO2008027888A3 (en) Radio frequency and electromagnetic interference shielding
IN2012DN03251A (en)
WO2009066504A1 (en) Module with embedded components
EP1840941A3 (en) Semiconductor device and manufacturing method thereof
TW200725824A (en) A package structure with a plurality of chips stacked each other
SG151163A1 (en) Semiconductor package and method of reducing electromagnetic interference between devices
CN104253094B (en) Semiconductor packages
EP2685503A3 (en) Integrated circuit stack with integrated electromagnetic interference shielding
WO2010101858A3 (en) Hermetic packaging of integrated circuit components
TW200719462A (en) Package device with electromagnetic interference shield
MX2010003822A (en) Wo 2009087296 a2 20090716.
TW201338108A (en) Semiconductor package and fabrication method thereof
WO2008114681A1 (en) Passive part
CN104347595B (en) Electronic packaging module and manufacturing method thereof
TW200727499A (en) Multi-chip build-up package of an optoelectronic chip and method for fabricating the same
WO2012009588A3 (en) Integrated shielding for a package-on-package system
WO2013055700A1 (en) Wafer level applied rf shields
TW200737486A (en) Semiconductor integrated circuit chip with nano-structure-surface resin passivation and method of fabricating the same
CN106206547B (en) A kind of integrated circuit package structure and its manufacturing method

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980102512.6

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09751354

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09751354

Country of ref document: EP

Kind code of ref document: A2