WO2009112704A8 - Dispositif d'inspection de plaquettes semi-conductrices - Google Patents

Dispositif d'inspection de plaquettes semi-conductrices Download PDF

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Publication number
WO2009112704A8
WO2009112704A8 PCT/FR2009/000115 FR2009000115W WO2009112704A8 WO 2009112704 A8 WO2009112704 A8 WO 2009112704A8 FR 2009000115 W FR2009000115 W FR 2009000115W WO 2009112704 A8 WO2009112704 A8 WO 2009112704A8
Authority
WO
WIPO (PCT)
Prior art keywords
inspection
semiconductor wafers
wafer
incident beams
source
Prior art date
Application number
PCT/FR2009/000115
Other languages
English (en)
Other versions
WO2009112704A1 (fr
Inventor
Philippe Gastaldo
Original Assignee
Altatech Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Altatech Semiconductor filed Critical Altatech Semiconductor
Publication of WO2009112704A1 publication Critical patent/WO2009112704A1/fr
Publication of WO2009112704A8 publication Critical patent/WO2009112704A8/fr

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9503Wafer edge inspection

Abstract

Dispositif d'inspection de plaquettes semi-conductrices (1) en mouvement, comprenant une source de lumière (4) d'au moins une plaquette supportée par un élément de transfert (2), et configurée pour émettre deux faisceaux incidents (5) vers une surface (la) de la plaquette (1), lesdits faisceaux incidents étant inclinés par rapport à la normale à ladite surface (la), et un module de détection (6) de franges d'interférence dans le faisceau réfléchi (7) par la surface (la) de la plaquette (1).
PCT/FR2009/000115 2008-02-05 2009-02-02 Dispositif d'inspection de plaquettes semi-conductrices WO2009112704A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0800597 2008-02-05
FR0800597A FR2927175B1 (fr) 2008-02-05 2008-02-05 Dispositif d'inspection de plaquettes semi-conductrices

Publications (2)

Publication Number Publication Date
WO2009112704A1 WO2009112704A1 (fr) 2009-09-17
WO2009112704A8 true WO2009112704A8 (fr) 2010-01-28

Family

ID=39731249

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2009/000115 WO2009112704A1 (fr) 2008-02-05 2009-02-02 Dispositif d'inspection de plaquettes semi-conductrices

Country Status (3)

Country Link
US (1) US20090195786A1 (fr)
FR (1) FR2927175B1 (fr)
WO (1) WO2009112704A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109073566A (zh) * 2016-03-31 2018-12-21 统半导体公司 用于通过激光多普勒效应检测用于微电子或光学的板的方法和系统

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI512865B (zh) * 2008-09-08 2015-12-11 Rudolph Technologies Inc 晶圓邊緣檢查技術
FR2959864B1 (fr) 2010-05-06 2013-01-18 Altatech Semiconductor Dispositif et procede d'inspection de plaquettes semi-conductrices en mouvement.
US9658169B2 (en) 2013-03-15 2017-05-23 Rudolph Technologies, Inc. System and method of characterizing micro-fabrication processes
JP6295497B2 (ja) * 2014-09-08 2018-03-20 キリンテクノシステム株式会社 回転検出装置および該回転検出装置を備えた検査装置
FR3026485B1 (fr) * 2014-09-29 2016-09-23 Altatech Semiconductor Procede et systeme d'inspection de plaquettes pour l'electronique, l'optique ou l'optoelectronique
FR3026484B1 (fr) * 2014-09-29 2018-06-15 Altatech Semiconductor Procede et systeme d'inspection de plaquettes transparentes pour l'electronique, l'optique ou l'optoelectronique
WO2018152202A1 (fr) * 2017-02-14 2018-08-23 Massachusetts Institute Of Technology Systèmes et procédés pour microscopie automatisée
FR3076618B1 (fr) 2018-01-05 2023-11-24 Unity Semiconductor Procede et systeme d'inspection optique d'un substrat
FR3087011B1 (fr) 2018-10-08 2022-12-30 Unity Semiconductor Dispositif d’inspection optique en champ sombre

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030830A (en) * 1976-01-05 1977-06-21 Atlantic Research Corporation Process and apparatus for sensing defects on a smooth surface
US4644172A (en) * 1984-02-22 1987-02-17 Kla Instruments Corporation Electronic control of an automatic wafer inspection system
US4775877A (en) * 1985-10-29 1988-10-04 Canon Kabushiki Kaisha Method and apparatus for processing a plate-like workpiece
US4850693A (en) * 1988-05-23 1989-07-25 The United States Of America As Represented By The United States Department Of Energy Compact portable diffraction moire interferometer
US5124931A (en) * 1988-10-14 1992-06-23 Tokyo Electron Limited Method of inspecting electric characteristics of wafers and apparatus therefor
JPH04298060A (ja) * 1991-03-26 1992-10-21 Tokyo Electron Ltd ウエハの位置合わせ装置
US5523839A (en) * 1994-02-28 1996-06-04 Minnesota Mining & Manufacturing Differential optical interferometric profilomenty for real time manufacturing control
FR2722290B1 (fr) * 1994-07-07 1996-08-30 Schneider Electric Sa Dispositif optique de detection de caracteristiques de particules en mouvement
US5548195A (en) * 1994-12-22 1996-08-20 International Business Machines Corporation Compensated servo control stage positioning apparatus
JP2877119B2 (ja) * 1996-12-26 1999-03-31 日本電気株式会社 移動体の速度測定装置
JPH1154407A (ja) * 1997-08-05 1999-02-26 Nikon Corp 位置合わせ方法
WO2002025708A2 (fr) * 2000-09-20 2002-03-28 Kla-Tencor-Inc. Procedes et systemes destines a des processus de fabrication de semi-conducteurs
EP1336094A2 (fr) * 2000-11-13 2003-08-20 Koninklijke Philips Electronics N.V. Mesure de defauts de surface
US20040227954A1 (en) * 2003-05-16 2004-11-18 Tong Xie Interferometer based navigation device
US7352444B1 (en) * 2004-06-24 2008-04-01 Cypress Semiconductor Corp. Method for arranging and rotating a semiconductor wafer within a photolithography tool prior to exposing the wafer
US20060256345A1 (en) * 2005-05-12 2006-11-16 Kla-Tencor Technologies Corp. Interferometry measurement in disturbed environments
US7433052B2 (en) * 2005-07-07 2008-10-07 Mitutoyo Corporation Systems and methods for tilt and range measurement
CN101563769B (zh) * 2006-12-14 2012-07-18 凯思捷股份有限公司 圆板保持装置及缺陷异物检测装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109073566A (zh) * 2016-03-31 2018-12-21 统半导体公司 用于通过激光多普勒效应检测用于微电子或光学的板的方法和系统
CN109073566B (zh) * 2016-03-31 2022-07-19 统一半导体公司 用于通过激光多普勒效应检测用于微电子或光学的板的方法和系统

Also Published As

Publication number Publication date
FR2927175B1 (fr) 2011-02-18
FR2927175A1 (fr) 2009-08-07
US20090195786A1 (en) 2009-08-06
WO2009112704A1 (fr) 2009-09-17

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